Donovan L. Barrett

Person

Penn Hills Township, Allegheny County, PA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for synthesizing ultrahigh-purity silicon carbide
- Patent number 9,388,509
- Issue date Jul 12, 2016
- II-VI Incorporated
- Ilya Zwieback
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Intra-cavity gettering of nitrogen in SiC crystal growth
- Patent number 9,017,629
- Issue date Apr 28, 2015
- II-VI Incorporated
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Grant
System for forming SiC crystals having spatially uniform doping imp...
- Patent number 8,216,369
- Issue date Jul 10, 2012
- II-VI Incorporated
- Avinash K. Gupta
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of and system for forming SiC crystals having spatially unif...
- Patent number 7,608,524
- Issue date Oct 27, 2009
- II-VI Incorporated
- Avinash K. Gupta
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for growing large silicon carbide single crystals
- Patent number 5,968,261
- Issue date Oct 19, 1999
- Northrop Grumman Corporation
- Donovan L. Barrett
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making a low resistivity silicon carbide boule
- Patent number 5,937,317
- Issue date Aug 10, 1999
- Northrop Grumman Corporation
- Donovan L. Barrett
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of preparing silicon carbide wafers for epitaxial growth
- Patent number 5,895,583
- Issue date Apr 20, 1999
- Northrop Grumman Corporation
- Godfrey Augustine
- C30 - CRYSTAL GROWTH
Information Patent Grant
Feedstock arrangement for silicon carbide boule growth
- Patent number 5,788,768
- Issue date Aug 4, 1998
- Northrop Grumman Corporation
- Donovan L. Barrett
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing large diameter silicon carbide crystals
- Patent number 5,746,827
- Issue date May 5, 1998
- Northrop Grumman Corporation
- Donovan L. Barrett
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for growing large silicon carbide single crystals
- Patent number 5,683,507
- Issue date Nov 4, 1997
- Northrop Grumman Corporation
- Donovan L. Barrett
- C30 - CRYSTAL GROWTH
Information Patent Grant
High resistivity silicon carbide substrates for high power microwav...
- Patent number 5,611,955
- Issue date Mar 18, 1997
- Northrop Grumman Corp.
- Donovan L. Barrett
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for epitaxially growing .alpha.-silicon carbide on a-axis .a...
- Patent number 5,501,173
- Issue date Mar 26, 1996
- Westinghouse Electric Corporation
- Albert A. Burk
- C30 - CRYSTAL GROWTH
Information Patent Grant
Indium doped gallium arsenide crystals and method of preparation
- Patent number 4,594,173
- Issue date Jun 10, 1986
- Westinghouse Electric Corp.
- Hudson M. Hobgood
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
"Method for Synthesizing Ultrahigh-Purity Silicon Carbide"
- Publication number 20130309496
- Publication date Nov 21, 2013
- II-VI Incorporated
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC Crystals Having Spatially Uniform Doping Impurities
- Publication number 20110303884
- Publication date Dec 15, 2011
- II-VI Incorporated
- Avinash K. Gupta
- C30 - CRYSTAL GROWTH
Information Patent Application
System for Forming SiC Crystals Having Spatially Uniform Doping Imp...
- Publication number 20100018455
- Publication date Jan 28, 2010
- II-VI Incorporated
- Avinash K. Gupta
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR SYNTHESIZING ULTRAHIGH-PURITY SILICON CARBIDE
- Publication number 20090220788
- Publication date Sep 3, 2009
- II-VI Incorporated
- Donovan L. Barrett
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Application
Intra-Cavity Gettering of Nitrogen in Sic Crystal Growth
- Publication number 20090169459
- Publication date Jul 2, 2009
- II-VI Incorporated
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Application
Low-Doped Semi-Insulating Sic Crystals and Method
- Publication number 20080190355
- Publication date Aug 14, 2008
- II-VI Incorporated
- Jihong Chen
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of and system for forming SiC crystals having spatially unif...
- Publication number 20060243984
- Publication date Nov 2, 2006
- II-VI Incorporated
- Avinash K. Gupta
- C30 - CRYSTAL GROWTH

Donovan L. Barrett

Person

Patents Grantslast 30 patents

Method for synthesizing ultrahigh-purity silicon carbide

Intra-cavity gettering of nitrogen in SiC crystal growth

System for forming SiC crystals having spatially uniform doping imp...

Method of and system for forming SiC crystals having spatially unif...

Method for growing large silicon carbide single crystals

Method of making a low resistivity silicon carbide boule

Method of preparing silicon carbide wafers for epitaxial growth

Feedstock arrangement for silicon carbide boule growth

Method of producing large diameter silicon carbide crystals

Apparatus for growing large silicon carbide single crystals

High resistivity silicon carbide substrates for high power microwav...

Method for epitaxially growing .alpha.-silicon carbide on a-axis .a...

Indium doped gallium arsenide crystals and method of preparation

Patents Applicationslast 30 patents

"Method for Synthesizing Ultrahigh-Purity Silicon Carbide"

SiC Crystals Having Spatially Uniform Doping Impurities

System for Forming SiC Crystals Having Spatially Uniform Doping Imp...

METHOD FOR SYNTHESIZING ULTRAHIGH-PURITY SILICON CARBIDE

Intra-Cavity Gettering of Nitrogen in Sic Crystal Growth

Low-Doped Semi-Insulating Sic Crystals and Method

Method of and system for forming SiC crystals having spatially unif...