Dorman C. Pitzer

Person

San Ramon, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Trench-gated MIS devices
- Patent number 9,324,858
- Issue date Apr 26, 2016
- Vishay Siliconix
- Anup Bhalla
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Structures of and methods of fabricating trench-gated MIS devices
- Patent number 7,335,946
- Issue date Feb 26, 2008
- Vishay Siliconix
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures of and methods of fabricating trench-gated MIS devices
- Patent number 7,005,347
- Issue date Feb 28, 2006
- Vishay Siliconix
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures of and methods of fabricating trench-gated MIS devices
- Patent number 6,838,722
- Issue date Jan 4, 2005
- Siliconix Incorporated
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating trench-gated power MOSFET
- Patent number 6,534,366
- Issue date Mar 18, 2003
- Siliconix Incorporated
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density trench-gated power MOSFET
- Patent number 6,348,712
- Issue date Feb 19, 2002
- Siliconix incorporated
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming vertical planar DMOSFET with self-aligned contact
- Patent number 6,277,695
- Issue date Aug 21, 2001
- Siliconix Incorporated
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar DMOS transistor fabricated by a three mask process
- Patent number 5,923,979
- Issue date Jul 13, 1999
- Siliconix Incorporated
- Dorman C. Pitzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trenched field effect transistor with PN depletion barrier
- Patent number 5,917,216
- Issue date Jun 29, 1999
- Siliconix Incorporated
- Brian H. Floyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of power mosfets, including termination structures
- Patent number 5,521,409
- Issue date May 28, 1996
- Siliconix Incorporated
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low on-resistance power MOS technology
- Patent number 5,429,964
- Issue date Jul 4, 1995
- Siliconix Incorporated
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and fabrication of power MOSFETs, including termination s...
- Patent number 5,404,040
- Issue date Apr 4, 1995
- Siliconix Incorporated
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low on-resistance power MOS technology
- Patent number 5,304,831
- Issue date Apr 19, 1994
- Siliconix Incorporated
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making shadow isolated metal DMOS FET device
- Patent number 4,561,168
- Issue date Dec 31, 1985
- Siliconix Incorporated
- Dorman C. Pitzer
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURES OF AND METHODS OF FABRICATING TRENCH-GATED MIS DEVICES
- Publication number 20110042742
- Publication date Feb 24, 2011
- VISHAY-SILICONIX
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structures of and methods of fabricating trench-gated MIS devices
- Publication number 20040113201
- Publication date Jun 17, 2004
- Siliconix Incorporated
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structures of and methods of fabricating trench-gated MIS devices
- Publication number 20030178673
- Publication date Sep 25, 2003
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating trench-gated power MOSFET
- Publication number 20010045598
- Publication date Nov 29, 2001
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS

Dorman C. Pitzer

Person

Patents Grantslast 30 patents

Trench-gated MIS devices

Structures of and methods of fabricating trench-gated MIS devices

Structures of and methods of fabricating trench-gated MIS devices

Structures of and methods of fabricating trench-gated MIS devices

Method of fabricating trench-gated power MOSFET

High density trench-gated power MOSFET

Method of forming vertical planar DMOSFET with self-aligned contact

Planar DMOS transistor fabricated by a three mask process

Trenched field effect transistor with PN depletion barrier

Structure of power mosfets, including termination structures

Low on-resistance power MOS technology

Structure and fabrication of power MOSFETs, including termination s...

Low on-resistance power MOS technology

Method of making shadow isolated metal DMOS FET device

Patents Applicationslast 30 patents

STRUCTURES OF AND METHODS OF FABRICATING TRENCH-GATED MIS DEVICES

Structures of and methods of fabricating trench-gated MIS devices

Structures of and methods of fabricating trench-gated MIS devices

Method of fabricating trench-gated power MOSFET