Dorothea Werber

Person

Munich, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical power semiconductor device and manufacturing method
- Patent number 11,575,032
- Issue date Feb 7, 2023
- Infineon Technologies AG
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse-conducting IGBT
- Patent number 9,711,626
- Issue date Jul 18, 2017
- Infineon Technologies AG
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of operating a reverse conducting IGBT
- Patent number 9,571,087
- Issue date Feb 14, 2017
- Infineon Technologies AG
- Frank Pfirsch
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device with charge carrier lifetime reduction means
- Patent number 9,362,349
- Issue date Jun 7, 2016
- Infineon Technologies AG
- Dorothea Werber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic circuit with a reverse-conducting IGBT and gate driver c...
- Patent number 9,337,827
- Issue date May 10, 2016
- Infineon Technologies AG
- Dorothea Werber
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor devices
- Patent number 9,337,185
- Issue date May 10, 2016
- Infineon Technologies AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,337,270
- Issue date May 10, 2016
- Infineon Technologies AG
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with emitter electrode electrically connected with impurity zone
- Patent number 9,240,450
- Issue date Jan 19, 2016
- Infineon Technologies AG
- Dorothea Werber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of operating a reverse conducting IGBT
- Patent number 9,231,581
- Issue date Jan 5, 2016
- Infineon Technologies AG
- Frank Pfirsch
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Reverse conducting IGBT
- Patent number 9,214,521
- Issue date Dec 15, 2015
- Infineon Technologies AG
- Dorothea Werber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with emitter electrode electrically connected with an impurity...
- Patent number 9,209,109
- Issue date Dec 8, 2015
- Infineon Technologies AG
- Dorothea Werber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and RC-IGBT with zones directly adjoining a re...
- Patent number 9,159,819
- Issue date Oct 13, 2015
- Infineon Technologies AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse conducting insulated gate bipolar transistor
- Patent number 9,018,674
- Issue date Apr 28, 2015
- Infineon Technologies AG
- Dorothea Werber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component with improved softness
- Patent number 8,466,491
- Issue date Jun 18, 2013
- Infineon Technologies Austria AG
- Dorothea Werber
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20210359117
- Publication date Nov 18, 2021
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Operating a Reverse Conducting IGBT
- Publication number 20160226477
- Publication date Aug 4, 2016
- INFINEON TECHNOLOGIES AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reverse-Conducting IGBT
- Publication number 20160035867
- Publication date Feb 4, 2016
- INFINEON TECHNOLOGIES AG
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and RC-IGBT with Zones Directly Adjoining a Re...
- Publication number 20150236143
- Publication date Aug 20, 2015
- INFINEON TECHNOLOGIES AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device, Method for Manufacturing the Same and IGBT wi...
- Publication number 20150228723
- Publication date Aug 13, 2015
- INFINEON TECHNOLOGIES AG
- Dorothea Werber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20150179636
- Publication date Jun 25, 2015
- INFINEON TECHNOLOGIES AG
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices
- Publication number 20150179637
- Publication date Jun 25, 2015
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Operating a Reverse Conducting IGBT
- Publication number 20150109050
- Publication date Apr 23, 2015
- INFINEON TECHNOLOGIES AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with Emitter Electrode Electrically Connected with an Impurity...
- Publication number 20150014743
- Publication date Jan 15, 2015
- Infineon Technoloiges AG
- Dorothea Werber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic Circuit with a Reverse-Conducting IGBT and Gate Driver C...
- Publication number 20150015309
- Publication date Jan 15, 2015
- INFINEON TECHNOLOGIES AG
- Dorothea Werber
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor Device with Charge Carrier Lifetime Reduction Means
- Publication number 20140015007
- Publication date Jan 16, 2014
- Dorothea Werber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reverse Conducting IGBT
- Publication number 20130341673
- Publication date Dec 26, 2013
- INFINEON TECHNOLOGIES AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reverse Conducting IGBT
- Publication number 20130341674
- Publication date Dec 26, 2013
- INFINEON TECHNOLOGIES AG
- Dorothea Werber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reverse Conducting Insulated Gate Bipolar Transistor
- Publication number 20130264607
- Publication date Oct 10, 2013
- INFINEON TECHNOLOGIES AG
- Dorothea Werber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT WITH IMPROVED SOFTNESS
- Publication number 20120286323
- Publication date Nov 15, 2012
- Infineon Technologies Austria AG
- Dorothea Werber
- H01 - BASIC ELECTRIC ELEMENTS

Dorothea Werber

Person

Patents Grantslast 30 patents

Vertical power semiconductor device and manufacturing method

Reverse-conducting IGBT

Method of operating a reverse conducting IGBT

Semiconductor device with charge carrier lifetime reduction means

Electronic circuit with a reverse-conducting IGBT and gate driver c...

Semiconductor devices

Semiconductor device

IGBT with emitter electrode electrically connected with impurity zone

Method of operating a reverse conducting IGBT

Reverse conducting IGBT

IGBT with emitter electrode electrically connected with an impurity...

Semiconductor device and RC-IGBT with zones directly adjoining a re...

Reverse conducting insulated gate bipolar transistor

Semiconductor component with improved softness

Patents Applicationslast 30 patents

VERTICAL POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

Method of Operating a Reverse Conducting IGBT

Reverse-Conducting IGBT

Semiconductor Device and RC-IGBT with Zones Directly Adjoining a Re...

Semiconductor Device, Method for Manufacturing the Same and IGBT wi...

Semiconductor Device

Semiconductor Devices

Method of Operating a Reverse Conducting IGBT

IGBT with Emitter Electrode Electrically Connected with an Impurity...

Electronic Circuit with a Reverse-Conducting IGBT and Gate Driver C...

Semiconductor Device with Charge Carrier Lifetime Reduction Means

Reverse Conducting IGBT

Reverse Conducting IGBT

Reverse Conducting Insulated Gate Bipolar Transistor

SEMICONDUCTOR COMPONENT WITH IMPROVED SOFTNESS