Douglas E. Mercer

Person

Richardson, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gate structure and method
- Patent number 8,021,990
- Issue date Sep 20, 2011
- Texas Instruments Incorporated
- Antonio L. P. Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-germanium physical vapor deposition for semiconductor device...
- Patent number 7,803,703
- Issue date Sep 28, 2010
- Texas Instruments Incorporated
- Doufeng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and method
- Patent number 7,535,066
- Issue date May 19, 2009
- Texas Instruments Incorporated
- Antonio L. P. Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate dielectric and method
- Patent number 7,449,385
- Issue date Nov 11, 2008
- Texas Instruments Incorporated
- Antonio L. P. Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-germanium physical vapor deposition for semiconductor device...
- Patent number 7,435,672
- Issue date Oct 14, 2008
- Texas Instruments Incorporated
- Doufeng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-halogen physical vapor deposition for semiconductor device de...
- Patent number 7,208,398
- Issue date Apr 24, 2007
- Texas Instruments Incorporated
- Peijun J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for integrating high-k dielectrics in transistor devices
- Patent number 7,045,431
- Issue date May 16, 2006
- Texas Instruments Incorporated
- Antonio L. P. Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with transistors having relatively high threshold volta...
- Patent number 6,773,972
- Issue date Aug 10, 2004
- Texas Instruments Incorporated
- Andrew Marshall
- G11 - INFORMATION STORAGE
Information Patent Grant
Rapid thermal annealing of doped polycrystalline silicon structures...
- Patent number 6,204,198
- Issue date Mar 20, 2001
- Texas Instruments Incorporated
- Aditi D. Banerjee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATE STRUCTURE AND METHOD
- Publication number 20090227117
- Publication date Sep 10, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Antonio L.P. Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-GERMANIUM PHYSICAL VAPOR DEPOSITION FOR SEMICONDUCTOR DEVICE...
- Publication number 20080311747
- Publication date Dec 18, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Doufeng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal-germanium physical vapor deposition for semiconductor device...
- Publication number 20060024963
- Publication date Feb 2, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Doufeng Yue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal-halogen physical vapor deposition for semiconductor device de...
- Publication number 20050208762
- Publication date Sep 22, 2005
- TEXAS INSTRUMENTS INCORPORATED
- Peijun J. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for integrating high-k dielectrics in transistor devices
- Publication number 20050136589
- Publication date Jun 23, 2005
- Antonio L.P. Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for forming interfacial layer for deposition of high-k diel...
- Publication number 20040126944
- Publication date Jul 1, 2004
- Antonio Luis Pacheco Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate dielectric and method
- Publication number 20040016973
- Publication date Jan 29, 2004
- Antonio L.P. Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate structure and method
- Publication number 20030164525
- Publication date Sep 4, 2003
- Antonio L. P. Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-thickness oxide growth with in-situ scanned laser heating
- Publication number 20020098712
- Publication date Jul 25, 2002
- Jaideep Mavoori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory cell with transistors having relatively high threshold volta...
- Publication number 20020084493
- Publication date Jul 4, 2002
- Andrew Marshall
- H01 - BASIC ELECTRIC ELEMENTS

Douglas E. Mercer

Person

Patents Grantslast 30 patents

Gate structure and method

Metal-germanium physical vapor deposition for semiconductor device...

Gate structure and method

Gate dielectric and method

Metal-germanium physical vapor deposition for semiconductor device...

Metal-halogen physical vapor deposition for semiconductor device de...

Method for integrating high-k dielectrics in transistor devices

Memory cell with transistors having relatively high threshold volta...

Rapid thermal annealing of doped polycrystalline silicon structures...

Patents Applicationslast 30 patents

GATE STRUCTURE AND METHOD

METAL-GERMANIUM PHYSICAL VAPOR DEPOSITION FOR SEMICONDUCTOR DEVICE...

Metal-germanium physical vapor deposition for semiconductor device...

Metal-halogen physical vapor deposition for semiconductor device de...

Method for integrating high-k dielectrics in transistor devices

Methods for forming interfacial layer for deposition of high-k diel...

Gate dielectric and method

Gate structure and method

Multi-thickness oxide growth with in-situ scanned laser heating

Memory cell with transistors having relatively high threshold volta...