Douglas Powell

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Highland Heights, OH, US

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Patents Grantslast 30 patents

Information Patent Grant
Method to reduce dislocation density in silicon using stress
- Patent number 8,389,999
- Issue date Mar 5, 2013
- Massachusetts Institute of Technology
- Anthony Buonassisi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD TO REDUCE DISLOCATION DENSITY IN SILICON USING STRESS
- Publication number 20110073869
- Publication date Mar 31, 2011
- Massachusetts Institute of Technology
- Anthony Buonassisi
- H01 - BASIC ELECTRIC ELEMENTS