Du Zhang

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Selective etching with fluorine, oxygen and noble gas containing pl...
- Patent number 12,131,914
- Issue date Oct 29, 2024
- Tokyo Electron Limited
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-throughput dry etching of films containing silicon-oxygen comp...
- Patent number 11,804,380
- Issue date Oct 31, 2023
- Tokyo Electron Limited
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cyclic plasma etching of carbon-containing materials
- Patent number 11,538,692
- Issue date Dec 27, 2022
- Tokyo Electron Limited
- Yunho Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer etch (ALE) of tungsten or other metal layers
- Patent number 11,189,499
- Issue date Nov 30, 2021
- Tokyo Electron Limited
- Yu-Hao Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective plasma etching of silicon oxide relative to silicon nitri...
- Patent number 11,158,517
- Issue date Oct 26, 2021
- Tokyo Electron Limited
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly selective silicon oxide/silicon nitride etching by selective...
- Patent number 11,152,217
- Issue date Oct 19, 2021
- Tokyo Electron Limited
- Yu-Hao Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Independent control of etching and passivation gas components for h...
- Patent number 11,024,508
- Issue date Jun 1, 2021
- Tokyo Electron Limited
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH ASPECT RATIO CONTACT ETCHING WITH ADDITIVE GAS
- Publication number 20240332029
- Publication date Oct 3, 2024
- TOKYO ELECTRON LIMITED
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sidewall Inorganic Passivation for Dielectric Etching Via Surface M...
- Publication number 20240162043
- Publication date May 16, 2024
- TOKYO ELECTRON LIMITED
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO SELECTIVELY ETCH SILICON NITRIDE TO SILICON OXIDE USING W...
- Publication number 20240128089
- Publication date Apr 18, 2024
- TOKYO ELECTRON LIMITED
- Yu-Hao Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
In-Situ Adsorbate Formation for Dielectric Etch
- Publication number 20240112888
- Publication date Apr 4, 2024
- TOKYO ELECTRON LIMITED
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-Temperature Etch
- Publication number 20240112919
- Publication date Apr 4, 2024
- TOKYO ELECTRON LIMITED
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
In-Situ Adsorbate Formation for Plasma Etch Process
- Publication number 20240112887
- Publication date Apr 4, 2024
- TOKYO ELECTRON LIMITED
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH PROCESS FOR OXIDE OF ALKALINE EARTH METAL
- Publication number 20230374670
- Publication date Nov 23, 2023
- TOKYO ELECTRON LIMITED
- Du Zhang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR ETCHING FOR SEMICONDUCTOR FABRICATION
- Publication number 20230307242
- Publication date Sep 28, 2023
- TOKYO ELECTRON LIMITED
- Yu-Hao Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cyclic Plasma Etching Of Carbon-Containing Materials
- Publication number 20220375759
- Publication date Nov 24, 2022
- TOKYO ELECTRON LIMITED
- Yunho Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFORMAL AMORPHOUS CARBON LAYER ETCH WITH SIDE-WALL PASSIVATION
- Publication number 20220199410
- Publication date Jun 23, 2022
- TOKYO ELECTRON LIMITED
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Etching with Fluorine, Oxygen and Noble Gas Containing Pl...
- Publication number 20220199418
- Publication date Jun 23, 2022
- TOKYO ELECTRON LIMITED
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-THROUGHPUT DRY ETCHING OF FILMS CONTAINING SILICON-OXYGEN COMP...
- Publication number 20220157615
- Publication date May 19, 2022
- TOKYO ELECTRON LIMITED
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-THROUGHPUT DRY ETCHING OF SILICON OXIDE AND SILICON NITRIDE MA...
- Publication number 20210233775
- Publication date Jul 29, 2021
- TOKYO ELECTRON LIMITED
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGHLY SELECTIVE SILICON OXIDE/SILICON NITRIDE ETCHING BY SELECTIVE...
- Publication number 20200402808
- Publication date Dec 24, 2020
- TOKYO ELECTRON LIMITED
- Yu-Hao Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDEPENDENT CONTROL OF ETCHING AND PASSIVATION GAS COMPONENTS FOR H...
- Publication number 20200321218
- Publication date Oct 8, 2020
- TOKYO ELECTRON LIMITED
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER ETCH (ALE) OF TUNGSTEN OR OTHER METAL LAYERS
- Publication number 20200312673
- Publication date Oct 1, 2020
- TOKYO ELECTRON LIMITED
- Yu-Hao Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE PLASMA ETCHING OF SILICON OXIDE RELATIVE TO SILICON NITRI...
- Publication number 20200234968
- Publication date Jul 23, 2020
- TOKYO ELECTRON LIMITED
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Selective etching with fluorine, oxygen and noble gas containing pl...

High-throughput dry etching of films containing silicon-oxygen comp...

Cyclic plasma etching of carbon-containing materials

Atomic layer etch (ALE) of tungsten or other metal layers

Selective plasma etching of silicon oxide relative to silicon nitri...

Highly selective silicon oxide/silicon nitride etching by selective...

Independent control of etching and passivation gas components for h...

Patents Applicationslast 30 patents

HIGH ASPECT RATIO CONTACT ETCHING WITH ADDITIVE GAS

Sidewall Inorganic Passivation for Dielectric Etching Via Surface M...

METHOD TO SELECTIVELY ETCH SILICON NITRIDE TO SILICON OXIDE USING W...

In-Situ Adsorbate Formation for Dielectric Etch

Low-Temperature Etch

In-Situ Adsorbate Formation for Plasma Etch Process

ETCH PROCESS FOR OXIDE OF ALKALINE EARTH METAL

METHOD FOR ETCHING FOR SEMICONDUCTOR FABRICATION

Cyclic Plasma Etching Of Carbon-Containing Materials

CONFORMAL AMORPHOUS CARBON LAYER ETCH WITH SIDE-WALL PASSIVATION

Selective Etching with Fluorine, Oxygen and Noble Gas Containing Pl...

HIGH-THROUGHPUT DRY ETCHING OF FILMS CONTAINING SILICON-OXYGEN COMP...

HIGH-THROUGHPUT DRY ETCHING OF SILICON OXIDE AND SILICON NITRIDE MA...

HIGHLY SELECTIVE SILICON OXIDE/SILICON NITRIDE ETCHING BY SELECTIVE...

INDEPENDENT CONTROL OF ETCHING AND PASSIVATION GAS COMPONENTS FOR H...

ATOMIC LAYER ETCH (ALE) OF TUNGSTEN OR OTHER METAL LAYERS

SELECTIVE PLASMA ETCHING OF SILICON OXIDE RELATIVE TO SILICON NITRI...