Duen-Huei HOU

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Fin Field-Effect Transistor and method of forming the same
- Patent number 12,136,624
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Duen-Huei Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory and manufacturing method thereof
- Patent number 12,075,631
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Line edge roughness analysis using atomic force microscopy
- Patent number 11,774,241
- Issue date Oct 3, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Shan Hu
- G01 - MEASURING TESTING
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 11,749,681
- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Duen-Huei Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory and manufacturing method thereof
- Patent number 11,659,718
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Assisted write method for magnetic random access memory
- Patent number 11,244,714
- Issue date Feb 8, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Line edge roughness analysis using atomic force microscopy
- Patent number 11,236,996
- Issue date Feb 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Shan Hu
- G01 - MEASURING TESTING
Information Patent Grant
Magnetic random access memory and manufacturing method thereof
- Patent number 11,004,901
- Issue date May 11, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Assisted write method for MRAM testing and field applications
- Patent number 10,916,286
- Issue date Feb 9, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Line edge roughness analysis using atomic force microscopy
- Patent number 10,746,542
- Issue date Aug 18, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Shan Hu
- G01 - MEASURING TESTING
Information Patent Grant
Magnetic random access memory and manufacturing method thereof
- Patent number 10,541,269
- Issue date Jan 21, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20240387548
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Duen-Huei Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20240373649
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- B82 - NANO-TECHNOLOGY
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20230369334
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Duen-Huei Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20230269951
- Publication date Aug 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- B82 - NANO-TECHNOLOGY
Information Patent Application
GATE STRUCTURES IN SEMICONDUCTOR DEVICES
- Publication number 20230040346
- Publication date Feb 9, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsiang-Pi CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LINE EDGE ROUGHNESS ANALYSIS USING ATOMIC FORCE MICROSCOPY
- Publication number 20220107179
- Publication date Apr 7, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Shan HU
- G01 - MEASURING TESTING
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20210366909
- Publication date Nov 25, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Duen-Huei Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20210265424
- Publication date Aug 26, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ji-Feng YING
- B82 - NANO-TECHNOLOGY
Information Patent Application
ASSISTED WRITE METHOD FOR MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20210241809
- Publication date Aug 5, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Feng YING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LINE EDGE ROUGHNESS ANALYSIS USING ATOMIC FORCE MICROSCOPY
- Publication number 20200340807
- Publication date Oct 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Shan HU
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20200152701
- Publication date May 14, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Feng YING
- B82 - NANO-TECHNOLOGY
Information Patent Application
LINE EDGE ROUGHNESS ANALYSIS USING ATOMIC FORCE MICROSCOPY
- Publication number 20200096332
- Publication date Mar 26, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Shan Hu
- G01 - MEASURING TESTING
Information Patent Application
ASSISTED WRITE METHOD FOR MRAM TESTING AND FIELD APPLICATIONS
- Publication number 20200058340
- Publication date Feb 20, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20190393265
- Publication date Dec 26, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Feng YING
- B82 - NANO-TECHNOLOGY

Duen-Huei HOU

Person

Patents Grantslast 30 patents

Fin Field-Effect Transistor and method of forming the same

Magnetic random access memory and manufacturing method thereof

Line edge roughness analysis using atomic force microscopy

Fin field-effect transistor and method of forming the same

Magnetic random access memory and manufacturing method thereof

Assisted write method for magnetic random access memory

Line edge roughness analysis using atomic force microscopy

Magnetic random access memory and manufacturing method thereof

Assisted write method for MRAM testing and field applications

Line edge roughness analysis using atomic force microscopy

Magnetic random access memory and manufacturing method thereof

Patents Applicationslast 30 patents

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF

GATE STRUCTURES IN SEMICONDUCTOR DEVICES

LINE EDGE ROUGHNESS ANALYSIS USING ATOMIC FORCE MICROSCOPY

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF

ASSISTED WRITE METHOD FOR MAGNETIC RANDOM ACCESS MEMORY

LINE EDGE ROUGHNESS ANALYSIS USING ATOMIC FORCE MICROSCOPY

MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF

LINE EDGE ROUGHNESS ANALYSIS USING ATOMIC FORCE MICROSCOPY

ASSISTED WRITE METHOD FOR MRAM TESTING AND FIELD APPLICATIONS

MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF