Dumitru Sdrulla

Person

Bend, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Bridged class-D RF amplifier circuit
- Patent number 12,081,177
- Issue date Sep 3, 2024
- Analog Power Conversion LLC
- Sam Seiichiro Ochi
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device with improved temperature uniformity
- Patent number 12,074,198
- Issue date Aug 27, 2024
- Analog Power Conversion LLC
- Amaury Gendron-Hansen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Schottky diode integrated with a semiconductor device
- Patent number 12,074,226
- Issue date Aug 27, 2024
- Analog Power Conversion LLC
- Amaury Gendron-Hansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor high-voltage termination with deep trench and floatin...
- Patent number 11,901,406
- Issue date Feb 13, 2024
- Analog Power Conversion LLC
- Amaury Gendron-Hansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF SiC MOSFET with recessed gate dielectric
- Patent number 11,830,943
- Issue date Nov 28, 2023
- Analog Power Conversion LLC
- Dumitru Gheorge Sdrulla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with forced carrier extraction and metho...
- Patent number 11,764,209
- Issue date Sep 19, 2023
- MW RF Semiconductors, LLC
- Dumitru G. Sdrulla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Space efficient high-voltage termination and process for fabricatin...
- Patent number 11,158,703
- Issue date Oct 26, 2021
- Microchip Technology Inc.
- Amaury Gendron-Hansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and assembly for mitigating short channel effects in silicon...
- Patent number 10,811,494
- Issue date Oct 20, 2020
- Microsemi Corporation
- Dumitru Gheorge Sdrulla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with improved field layer
- Patent number 10,566,416
- Issue date Feb 18, 2020
- Microsemi Corporation
- Amaury Gendron-Hansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC transient voltage suppressor
- Patent number 9,478,606
- Issue date Oct 25, 2016
- Microsemi Corporation
- Dumitru Sdrulla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low loss SiC MOSFET
- Patent number 9,040,377
- Issue date May 26, 2015
- Microsemi Corporation
- Dumitru Sdrulla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pseudo self aligned radhard MOSFET and process of manufacture
- Patent number 8,841,718
- Issue date Sep 23, 2014
- Microsemi Corporation
- Dumitru Sdrulla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low loss SiC MOSFET
- Patent number 8,674,439
- Issue date Mar 18, 2014
- Microsemi Corporation
- Dumitru Sdrulla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High reliability-high voltage junction termination with charge diss...
- Patent number 8,476,691
- Issue date Jul 2, 2013
- Microsemi Corporation
- Dumitru Sdrulla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC power vertical DMOS with increased safe operating area
- Patent number 8,436,367
- Issue date May 7, 2013
- Microsemi Corporation
- Dumitru Sdrulla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination for high voltage semiconductor device
- Patent number 8,110,888
- Issue date Feb 7, 2012
- Microsemi Corporation
- Jinshu Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diode (SBD) and its off-shoot merged PN/Schottky d...
- Patent number 7,851,881
- Issue date Dec 14, 2010
- Microsemi Corporation
- Feng Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Design and fabrication of rugged FRED, power MOSFET or IGBT
- Patent number 7,671,410
- Issue date Mar 2, 2010
- Microsemi Corporation
- Shanqi Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Design and fabrication of rugged FRED
- Patent number 7,169,634
- Issue date Jan 30, 2007
- Advanced Power Technology, Inc.
- Shanqi Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density power device fabrication process using undercut oxide...
- Patent number 5,648,283
- Issue date Jul 15, 1997
- Advanced Power Technology, Inc.
- Dah Wen Tsang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT device with platinum lifetime control and reduced gaw
- Patent number 5,528,058
- Issue date Jun 18, 1996
- Advanced Power Technology, Inc.
- Douglas A. Pike
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SIC STATIC INDUCTION TRANSISTOR WITH DOUBLE SIDE COOLING AND METHOD...
- Publication number 20240371989
- Publication date Nov 7, 2024
- Analog Power Conversion LLC
- Dumitru G. SDRULLA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH FORCED CARRIER EXTRACTION AND METHO...
- Publication number 20230420449
- Publication date Dec 28, 2023
- MW RF Semiconductors, LLC
- Dumitru G. Sdrulla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED FREEWHEELING DIODE AND EXTRACTION DEVICE
- Publication number 20230147486
- Publication date May 11, 2023
- MW RF Semiconductors, LLC
- Dumitru G. Sdrulla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH IMPROVED TEMPERATURE UNIFORMITY
- Publication number 20230139205
- Publication date May 4, 2023
- Analog Power Conversion LLC
- Amaury GENDRON-HANSEN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SCHOTTKY DIODE INTEGRATED WITH A SEMICONDUCTOR DEVICE
- Publication number 20230084411
- Publication date Mar 16, 2023
- Analog Power Conversion LLC
- Amaury GENDRON-HANSEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BRIDGED CLASS-D RF AMPLIFIER CIRCUIT
- Publication number 20230080752
- Publication date Mar 16, 2023
- Analog Power Conversion LLC
- Sam Seiichiro OCHI
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
RF SiC MOSFET WITH RECESSED GATE DIELECTRIC
- Publication number 20230022394
- Publication date Jan 26, 2023
- Analog Power Conversion LLC
- Dumitru Gheorge SDRULLA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICE WITH PARTITIONED ACTIVE REGIONS
- Publication number 20230012738
- Publication date Jan 19, 2023
- Analog Power Conversion LLC
- Amaury GENDRON-HANSEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR HIGH-VOLTAGE TERMINATION WITH DEEP TRENCH AND FLOATIN...
- Publication number 20230019985
- Publication date Jan 19, 2023
- Analog Power Conversion LLC
- Amaury GENDRON-HANSEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DEEP TRENCH AND MANUFACTURING PROCESS THE...
- Publication number 20230021169
- Publication date Jan 19, 2023
- Analog Power Conversion LLC
- Dumitru Gheorge SDRULLA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED FREEWHEELING DIODE AND EXTRACTION DEVICE
- Publication number 20220122964
- Publication date Apr 21, 2022
- MW RF Semiconductors, LLC
- Dumitru G. Sdrulla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH FORCED CARRIER EXTRACTION AND METHO...
- Publication number 20220122962
- Publication date Apr 21, 2022
- MW RF Semiconductors, LLC
- Dumitru G. Sdrulla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACE EFFICIENT HIGH-VOLTAGE TERMINATION AND PROCESS FOR FABRICATIN...
- Publication number 20200388670
- Publication date Dec 10, 2020
- Microchip Technology Inc.
- Amaury Gendron-Hansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND ASSEMBLY FOR MITIGATING SHORT CHANNEL EFFECTS IN SILICON...
- Publication number 20190140047
- Publication date May 9, 2019
- MICROSEMI CORPORATION
- Dumitru Gheorge Sdrulla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with improved field layer
- Publication number 20190058032
- Publication date Feb 21, 2019
- MICROSEMI CORPORATION
- Amaury Gendron-Hansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC TRANSIENT VOLTAGE SUPPRESSOR
- Publication number 20160126306
- Publication date May 5, 2016
- MICROSEMI CORPORATION
- Dumitru Sdrulla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PSEUDO SELF ALIGNED RADHARD MOSFET AND PROCESS OF MANUFACTURE
- Publication number 20140339625
- Publication date Nov 20, 2014
- Dumitru Sdrulla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW LOSS SIC MOSFET
- Publication number 20140065778
- Publication date Mar 6, 2014
- MICROSEMI CORPORATION
- Dumitru Sdrulla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHICALLY INTEGRATED SIC MOSFET AND SCHOTTKY BARRIER DIODE
- Publication number 20130313570
- Publication date Nov 28, 2013
- MICROSEMI CORPORATION
- Dumitru Sdrulla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW LOSS SIC MOSFET
- Publication number 20130256698
- Publication date Oct 3, 2013
- MICROSEMI CORPORATION
- Dumitru Sdrulla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PSEUDO SELF ALIGNED RADHARD MOSFET AND PROCESS OF MANUFACTURE
- Publication number 20130181280
- Publication date Jul 18, 2013
- MICROSEMI CORPORATION
- Dumitru Sdrulla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER DIODE (SBD) AND ITS OFF-SHOOT MERGED PN/SCHOTTKY D...
- Publication number 20110037139
- Publication date Feb 17, 2011
- MICROSEMI CORPORATION
- Feng Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE TERMINATION FOR HIGH VOLTAGE SEMICONDUCTOR DEVICE
- Publication number 20090072340
- Publication date Mar 19, 2009
- MICROSEMI CORPORATION
- Jinshu Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DESIGN AND FABRICATION OF RUGGED FRED, POWER MOSFET OR IGBT
- Publication number 20070096237
- Publication date May 3, 2007
- MICROSEMI CORP. -POWER PRODUCTS GROUP
- Shanqi Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Design and fabrication of rugged FRED
- Publication number 20040164347
- Publication date Aug 26, 2004
- ADVANCED POWER TECHNOLOGY, INC., a Delaware corporation
- Shanqi Zhao
- H01 - BASIC ELECTRIC ELEMENTS

Dumitru Sdrulla

Person

Patents Grantslast 30 patents

Bridged class-D RF amplifier circuit

Semiconductor device with improved temperature uniformity

Schottky diode integrated with a semiconductor device

Semiconductor high-voltage termination with deep trench and floatin...

RF SiC MOSFET with recessed gate dielectric

Power semiconductor device with forced carrier extraction and metho...

Space efficient high-voltage termination and process for fabricatin...

Method and assembly for mitigating short channel effects in silicon...

Semiconductor device with improved field layer

SiC transient voltage suppressor

Low loss SiC MOSFET

Pseudo self aligned radhard MOSFET and process of manufacture

Low loss SiC MOSFET

High reliability-high voltage junction termination with charge diss...

SiC power vertical DMOS with increased safe operating area

Edge termination for high voltage semiconductor device

Schottky barrier diode (SBD) and its off-shoot merged PN/Schottky d...

Design and fabrication of rugged FRED, power MOSFET or IGBT

Design and fabrication of rugged FRED

High density power device fabrication process using undercut oxide...

IGBT device with platinum lifetime control and reduced gaw

Patents Applicationslast 30 patents

SIC STATIC INDUCTION TRANSISTOR WITH DOUBLE SIDE COOLING AND METHOD...

POWER SEMICONDUCTOR DEVICE WITH FORCED CARRIER EXTRACTION AND METHO...

INTEGRATED FREEWHEELING DIODE AND EXTRACTION DEVICE

SEMICONDUCTOR DEVICE WITH IMPROVED TEMPERATURE UNIFORMITY

SCHOTTKY DIODE INTEGRATED WITH A SEMICONDUCTOR DEVICE

BRIDGED CLASS-D RF AMPLIFIER CIRCUIT

RF SiC MOSFET WITH RECESSED GATE DIELECTRIC

POWER DEVICE WITH PARTITIONED ACTIVE REGIONS

SEMICONDUCTOR HIGH-VOLTAGE TERMINATION WITH DEEP TRENCH AND FLOATIN...

SEMICONDUCTOR DEVICE WITH DEEP TRENCH AND MANUFACTURING PROCESS THE...

INTEGRATED FREEWHEELING DIODE AND EXTRACTION DEVICE

POWER SEMICONDUCTOR DEVICE WITH FORCED CARRIER EXTRACTION AND METHO...

SPACE EFFICIENT HIGH-VOLTAGE TERMINATION AND PROCESS FOR FABRICATIN...

METHOD AND ASSEMBLY FOR MITIGATING SHORT CHANNEL EFFECTS IN SILICON...

Semiconductor device with improved field layer

SIC TRANSIENT VOLTAGE SUPPRESSOR

PSEUDO SELF ALIGNED RADHARD MOSFET AND PROCESS OF MANUFACTURE

LOW LOSS SIC MOSFET

MONOLITHICALLY INTEGRATED SIC MOSFET AND SCHOTTKY BARRIER DIODE

LOW LOSS SIC MOSFET

PSEUDO SELF ALIGNED RADHARD MOSFET AND PROCESS OF MANUFACTURE

SCHOTTKY BARRIER DIODE (SBD) AND ITS OFF-SHOOT MERGED PN/SCHOTTKY D...

EDGE TERMINATION FOR HIGH VOLTAGE SEMICONDUCTOR DEVICE

DESIGN AND FABRICATION OF RUGGED FRED, POWER MOSFET OR IGBT

Design and fabrication of rugged FRED