Durai Vishak Nirmal Ramaswamy

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Array of capacitors, array of memory cells, methods of forming an a...
- Patent number 12,150,312
- Issue date Nov 19, 2024
- Micron Technology, Inc.
- Sameer Chhajed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory arrays comprising vertically-alternating tiers of insulative...
- Patent number 12,150,318
- Issue date Nov 19, 2024
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated assemblies comprising hydrogen diffused within two or mo...
- Patent number 12,101,946
- Issue date Sep 24, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having 2-transistor vertical memory cell and shield s...
- Patent number 12,080,331
- Issue date Sep 3, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having shared access line for 2-transistor vertical m...
- Patent number 12,069,853
- Issue date Aug 20, 2024
- Micron Technology, Inc.
- Kamal M. Karda
Information Patent Grant
Devices including vertical transistors, and related methods
- Patent number 12,040,411
- Issue date Jul 16, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory arrays comprising vertically-alternating tiers of insulative...
- Patent number 12,004,354
- Issue date Jun 4, 2024
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical 2-transistor memory cell
- Patent number 11,985,806
- Issue date May 14, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Grant
Devices including vertical transistors, and related methods
- Patent number 11,973,145
- Issue date Apr 30, 2024
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory arrays, ferroelectric transistors, and methods of reading an...
- Patent number 11,955,156
- Issue date Apr 9, 2024
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having 2-transistor vertical memory cell and wrapped...
- Patent number 11,950,426
- Issue date Apr 2, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having 2-transistor vertical memory cell and shield s...
- Patent number 11,950,402
- Issue date Apr 2, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having shared read/write access line for 2-transistor...
- Patent number 11,942,136
- Issue date Mar 26, 2024
- Micron Technology, Inc.
- Karthik Sarpatwari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cell disturb prevention using a leaker device to reduce excess char...
- Patent number 11,937,433
- Issue date Mar 19, 2024
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells and methods of forming a capacitor including current l...
- Patent number 11,935,574
- Issue date Mar 19, 2024
- Micron Technology, Inc.
- Michael Mutch
- G11 - INFORMATION STORAGE
Information Patent Grant
Arrays of capacitors and arrays of memory cells
- Patent number 11,925,031
- Issue date Mar 5, 2024
- Micron Technology, Inc.
- Fatma Arzum Simsek-Ege
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies and methods of forming integrated assemblies
- Patent number 11,917,834
- Issue date Feb 27, 2024
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices, transistors, and related methods for contact...
- Patent number 11,908,913
- Issue date Feb 20, 2024
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies having transistor body regions coupled to car...
- Patent number 11,910,597
- Issue date Feb 20, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having 2-transistor memory cell and access line plate
- Patent number 11,871,589
- Issue date Jan 9, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices, hybrid transistors, and related methods
- Patent number 11,856,799
- Issue date Dec 26, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitors
- Patent number 11,856,790
- Issue date Dec 26, 2023
- Micron Technology, Inc.
- Ashonita A. Chavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid memory device using different types of capacitors
- Patent number 11,853,552
- Issue date Dec 26, 2023
- Micron Technology, Inc.
- Kevin J. Ryan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor devices comprising transistors having increased thres...
- Patent number 11,843,055
- Issue date Dec 12, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having 2-transistor vertical memory cell
- Patent number 11,839,073
- Issue date Dec 5, 2023
- Micron Technology, Inc.
- Srinivas Pulugurtha
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated assemblies comprising hydrogen diffused within two or mo...
- Patent number 11,832,454
- Issue date Nov 28, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitor, a ferroelectric memory cell, an array of f...
- Patent number 11,825,662
- Issue date Nov 21, 2023
- Micron Technology, Inc.
- Clement Jacob
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inverters, and related memory devices and electronic systems
- Patent number 11,791,391
- Issue date Oct 17, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory arrays comprising vertically-alternating tiers of insulative...
- Patent number 11,778,838
- Issue date Oct 3, 2023
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having 2-transistor vertical memory cell and a common...
- Patent number 11,776,907
- Issue date Oct 3, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD S...
- Publication number 20240420750
- Publication date Dec 19, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING SHARED ACCESS LINE FOR 2-TRANSISTOR VERTICAL M...
- Publication number 20240414911
- Publication date Dec 12, 2024
- Micron Technology, Inc.
- Kamal M. Karda
Information Patent Application
Integrated Assemblies Comprising Hydrogen Diffused Within Two or Mo...
- Publication number 20240413154
- Publication date Dec 12, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH A TRANSISTOR ABOVE VERTICALLY STACKED MEMORY CELLS
- Publication number 20240389309
- Publication date Nov 21, 2024
- Micron Technology, Inc.
- Kamal M. KARDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL 2-TRANSISTOR MEMORY CELL
- Publication number 20240373619
- Publication date Nov 7, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICES INCLUDING VERTICAL TRANSISTORS
- Publication number 20240363763
- Publication date Oct 31, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Arrays Comprising Vertically-Alternating Tiers Of Insulative...
- Publication number 20240298451
- Publication date Sep 5, 2024
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Arrays, Ferroelectric Transistors, and Methods of Reading an...
- Publication number 20240265960
- Publication date Aug 8, 2024
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD S...
- Publication number 20240251543
- Publication date Jul 25, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND WRAPPED...
- Publication number 20240251563
- Publication date Jul 25, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE HAVING SHARED READ/WRITE ACCESS LINE FOR 2-TRANSISTOR...
- Publication number 20240233797
- Publication date Jul 11, 2024
- Micron Technology, Inc.
- Karthik Sarpatwari
- G11 - INFORMATION STORAGE
Information Patent Application
Integrated Assemblies and Methods of Forming Integrated Assemblies
- Publication number 20240215258
- Publication date Jun 27, 2024
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL
- Publication number 20240196604
- Publication date Jun 13, 2024
- Micron Technology, Inc.
- Srinivas Pulugurtha
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE INCLUDING TIERS OF FeFET MEMORY CELLS AND VERTICAL CO...
- Publication number 20240188302
- Publication date Jun 6, 2024
- Micron Technology, Inc.
- Kamal M. Karda
Information Patent Application
MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS
- Publication number 20240188273
- Publication date Jun 6, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS AND CHARGE...
- Publication number 20240188274
- Publication date Jun 6, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
Integrated Assemblies Having Transistor Body Regions Coupled to Car...
- Publication number 20240172432
- Publication date May 23, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY STRUCTURES WITH VOIDS
- Publication number 20240164113
- Publication date May 16, 2024
- Micron Technology, Inc.
- Alessandro Calderoni
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING 2-TRANSISTOR MEMORY CELL AND ACCESS LINE PLATE
- Publication number 20240138158
- Publication date Apr 25, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENTIAL STORAGE IN MEMORY ARRAYS
- Publication number 20240127877
- Publication date Apr 18, 2024
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICES COMPRISING TRANSISTORS HAVING INCREASED THRES...
- Publication number 20240113223
- Publication date Apr 4, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICES AND HYBRID TRANSISTORS
- Publication number 20240099026
- Publication date Mar 21, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
Integrated Assemblies Comprising Hydrogen Diffused Within Two or Mo...
- Publication number 20240074216
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND MEMORY E...
- Publication number 20240074211
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SEPARATE...
- Publication number 20240074138
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
Information Patent Application
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND A COMMON...
- Publication number 20240047356
- Publication date Feb 8, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SEPARATE...
- Publication number 20230422471
- Publication date Dec 28, 2023
- Micron Technology, Inc.
- Eric S. Carman
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Arrays Comprising Vertically-Alternating Tiers of Insulative...
- Publication number 20230403867
- Publication date Dec 14, 2023
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
Field Effect Transistor Constructions and Methods of Programming Fi...
- Publication number 20230402082
- Publication date Dec 14, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION FOR MEMORY CELLS
- Publication number 20230397431
- Publication date Dec 7, 2023
- Micron Technology, Inc.
- Giorgio Servalli
- H01 - BASIC ELECTRIC ELEMENTS

Durai Vishak Nirmal Ramaswamy

Person

Patents Grantslast 30 patents

Array of capacitors, array of memory cells, methods of forming an a...

Memory arrays comprising vertically-alternating tiers of insulative...

Integrated assemblies comprising hydrogen diffused within two or mo...

Memory device having 2-transistor vertical memory cell and shield s...

Memory device having shared access line for 2-transistor vertical m...

Devices including vertical transistors, and related methods

Memory arrays comprising vertically-alternating tiers of insulative...

Vertical 2-transistor memory cell

Devices including vertical transistors, and related methods

Memory arrays, ferroelectric transistors, and methods of reading an...

Memory device having 2-transistor vertical memory cell and wrapped...

Memory device having 2-transistor vertical memory cell and shield s...

Memory device having shared read/write access line for 2-transistor...

Cell disturb prevention using a leaker device to reduce excess char...

Memory cells and methods of forming a capacitor including current l...

Arrays of capacitors and arrays of memory cells

Integrated assemblies and methods of forming integrated assemblies

Semiconductor devices, transistors, and related methods for contact...

Integrated assemblies having transistor body regions coupled to car...

Memory device having 2-transistor memory cell and access line plate

Semiconductor devices, hybrid transistors, and related methods

Ferroelectric capacitors

Hybrid memory device using different types of capacitors

Semiconductor devices comprising transistors having increased thres...

Memory device having 2-transistor vertical memory cell

Integrated assemblies comprising hydrogen diffused within two or mo...

Ferroelectric capacitor, a ferroelectric memory cell, an array of f...

Inverters, and related memory devices and electronic systems

Memory arrays comprising vertically-alternating tiers of insulative...

Memory device having 2-transistor vertical memory cell and a common...

Patents Applicationslast 30 patents

MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD S...

MEMORY DEVICE HAVING SHARED ACCESS LINE FOR 2-TRANSISTOR VERTICAL M...

Integrated Assemblies Comprising Hydrogen Diffused Within Two or Mo...

MEMORY DEVICE WITH A TRANSISTOR ABOVE VERTICALLY STACKED MEMORY CELLS

VERTICAL 2-TRANSISTOR MEMORY CELL

DEVICES INCLUDING VERTICAL TRANSISTORS

Memory Arrays Comprising Vertically-Alternating Tiers Of Insulative...

Memory Arrays, Ferroelectric Transistors, and Methods of Reading an...

MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SHIELD S...

MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND WRAPPED...

MEMORY DEVICE HAVING SHARED READ/WRITE ACCESS LINE FOR 2-TRANSISTOR...

Integrated Assemblies and Methods of Forming Integrated Assemblies

MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL

MEMORY DEVICE INCLUDING TIERS OF FeFET MEMORY CELLS AND VERTICAL CO...

MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS

MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS AND CHARGE...

Integrated Assemblies Having Transistor Body Regions Coupled to Car...

MEMORY STRUCTURES WITH VOIDS

MEMORY DEVICE HAVING 2-TRANSISTOR MEMORY CELL AND ACCESS LINE PLATE

DIFFERENTIAL STORAGE IN MEMORY ARRAYS

SEMICONDUCTOR DEVICES COMPRISING TRANSISTORS HAVING INCREASED THRES...

SEMICONDUCTOR DEVICES AND HYBRID TRANSISTORS

Integrated Assemblies Comprising Hydrogen Diffused Within Two or Mo...

MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND MEMORY E...

MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SEPARATE...

MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND A COMMON...

MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND SEPARATE...

Memory Arrays Comprising Vertically-Alternating Tiers of Insulative...

Field Effect Transistor Constructions and Methods of Programming Fi...

FORMATION FOR MEMORY CELLS