Dwight C. Streit

Person

Seal Beach, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Ultra high speed heterojunction bipolar transistor having a cantile...
- Patent number 6,680,494
- Issue date Jan 20, 2004
- Northrop Grumman Corporation
- Augusto L. Gutierrez-Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure having a charge injection barrier
- Patent number 6,528,829
- Issue date Mar 4, 2003
- TRW Inc.
- Augusto L. Gutierrez-Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating monolithic multifunction integrated circuit d...
- Patent number 6,465,289
- Issue date Oct 15, 2002
- TRW Inc.
- Dwight C. Streit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backgate heterojunction acoustic charge transport device
- Patent number 6,452,464
- Issue date Sep 17, 2002
- TRW Inc.
- Chung-Hsu Chen
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Heterojunction bipolar transistor with reduced thermal resistance
- Patent number 6,376,867
- Issue date Apr 23, 2002
- TRW Inc.
- Augusto L. Gutierrez-Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-frequency GaAs substrate based schottky barrier diodes
- Patent number 6,037,646
- Issue date Mar 14, 2000
- TRW Inc.
- Aaron K. Oki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating high-frequency GaAs substrate-based Schottky...
- Patent number 5,930,636
- Issue date Jul 27, 1999
- TRW Inc.
- Aaron K. Oki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double photoresist layer self-aligned heterojuction bipolar transistor
- Patent number 5,892,248
- Issue date Apr 6, 1999
- TRW Inc.
- Aaron K. Oki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating very high gain heterojunction bipolar transis...
- Patent number 5,840,612
- Issue date Nov 24, 1998
- TRW Inc.
- Aaron K. Oki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low noise-high linearity HEMT-HBT composite
- Patent number 5,838,031
- Issue date Nov 17, 1998
- TRW Inc.
- Kevin Wesley Kobayashi
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method of fabricating double photoresist layer self-aligned heteroj...
- Patent number 5,736,417
- Issue date Apr 7, 1998
- TRW Inc.
- Aaron K. Oki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making selective subcollector heterojunction bipolar tra...
- Patent number 5,672,522
- Issue date Sep 30, 1997
- TRW Inc.
- Dwight Christopher Streit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Relaxed channel high electron mobility transistor
- Patent number 5,668,387
- Issue date Sep 16, 1997
- TRW Inc.
- Dwight C. Streit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-epitaxy heterojunction bipolar transistors for high speed pe...
- Patent number 5,648,666
- Issue date Jul 15, 1997
- TRW Inc.
- Liem Thanh Tran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quaternary collector InAlAs-InGaAlAs heterojunction bipolar transistor
- Patent number 5,631,477
- Issue date May 20, 1997
- TRW Inc.
- Dwight C. Streit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reliable thin film resistors for integrated circuit applications
- Patent number 5,323,138
- Issue date Jun 21, 1994
- TRW Inc.
- Aaron K. Oki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power pseudomorphic gallium arsenide high electron mobility tr...
- Patent number 5,262,660
- Issue date Nov 16, 1993
- TRW Inc.
- Dwight C. Streit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to produce complementary heterojunction bipolar transistors
- Patent number 5,262,335
- Issue date Nov 16, 1993
- TRW Inc.
- Dwight C. Streit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite quantum well infrared detector
- Patent number 5,239,186
- Issue date Aug 24, 1993
- TRW Inc.
- George W. McIver
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of producing high reliability heterojunction bipolar transis...
- Patent number 5,162,243
- Issue date Nov 10, 1992
- TRW Inc.
- Dwight C. Streit
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Ultra high speed heterojunction bipolar transistor having a cantile...
- Publication number 20010023947
- Publication date Sep 27, 2001
- Augusto L. Gutierrez-Aitken
- H01 - BASIC ELECTRIC ELEMENTS

Dwight C. Streit

Person

Patents Grantslast 30 patents

Ultra high speed heterojunction bipolar transistor having a cantile...

Integrated circuit structure having a charge injection barrier

Method of fabricating monolithic multifunction integrated circuit d...

Backgate heterojunction acoustic charge transport device

Heterojunction bipolar transistor with reduced thermal resistance

High-frequency GaAs substrate based schottky barrier diodes

Method of fabricating high-frequency GaAs substrate-based Schottky...

Double photoresist layer self-aligned heterojuction bipolar transistor

Method of fabricating very high gain heterojunction bipolar transis...

Low noise-high linearity HEMT-HBT composite

Method of fabricating double photoresist layer self-aligned heteroj...

Method for making selective subcollector heterojunction bipolar tra...

Relaxed channel high electron mobility transistor

Double-epitaxy heterojunction bipolar transistors for high speed pe...

Quaternary collector InAlAs-InGaAlAs heterojunction bipolar transistor

Reliable thin film resistors for integrated circuit applications

High power pseudomorphic gallium arsenide high electron mobility tr...

Method to produce complementary heterojunction bipolar transistors

Composite quantum well infrared detector

Method of producing high reliability heterojunction bipolar transis...

Patents Applicationslast 30 patents

Ultra high speed heterojunction bipolar transistor having a cantile...