E. Todd Ryan

Follow

Person

Wappingers Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for depositing a conductive capping layer on metal lines
- Patent number 8,592,312
- Issue date Nov 26, 2013
- GLOBALFOUNDRIES Inc.
- E. Todd Ryan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for reducing semiconductor package tensile stress
- Patent number 8,212,346
- Issue date Jul 3, 2012
- Global Foundries, Inc.
- E. Todd Ryan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnects with a dielectric sealant layer
- Patent number 7,998,856
- Issue date Aug 16, 2011
- Advanced Micro Devices, Inc.
- E. Todd Ryan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor devices by microwave curing of low-...
- Patent number 7,557,035
- Issue date Jul 7, 2009
- Advanced Micro Devices, Inc.
- E. Todd Ryan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnects with a dielectric sealant layer
- Patent number 6,919,636
- Issue date Jul 19, 2005
- Advanced Micro Devices, Inc.
- E. Todd Ryan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND APPARATUS FOR REDUCING SEMICONDUCTOR PACKAGE TENSILE STRESS
- Publication number 20100102435
- Publication date Apr 29, 2010
- Advanced Micro Devices, Inc.
- E. Todd RYAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for depositing a conductive capping layer on metal lines
- Publication number 20080305617
- Publication date Dec 11, 2008
- Advanced Micro Devices, Inc.
- E. Todd Ryan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interconnects with a dielectric sealant layer
- Publication number 20050208760
- Publication date Sep 22, 2005
- Advanced Micro Devices, Inc.
- E. Todd Ryan
- H01 - BASIC ELECTRIC ELEMENTS