Ebony L. Mays

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Filling openings by combining non-flowable and flowable processes
- Patent number 11,990,364
- Issue date May 21, 2024
- Intel Corporation
- Ebony L. Mays
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Filling openings by combining non-flowable and flowable processes
- Patent number 11,978,657
- Issue date May 7, 2024
- Intel Corporation
- Ebony L. Mays
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin end plug structures for advanced integrated circuit structure f...
- Patent number 11,961,838
- Issue date Apr 16, 2024
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin end plug structures for advanced integrated circuit structure f...
- Patent number 11,380,683
- Issue date Jul 5, 2022
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having fin-end stress-inducing features
- Patent number 10,964,800
- Issue date Mar 30, 2021
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin end plug structures for advanced integrated circuit structure f...
- Patent number 10,861,850
- Issue date Dec 8, 2020
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric gap-fill material deposition
- Patent number 10,811,251
- Issue date Oct 20, 2020
- Intel Corporation
- Jeanne L. Luce
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Fin end plug structures for advanced integrated circuit structure f...
- Patent number 10,734,379
- Issue date Aug 4, 2020
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FILLING OPENINGS BY COMBINING NON-FLOWABLE AND FLOWABLE PROCESSES
- Publication number 20240249972
- Publication date Jul 25, 2024
- Intel Corporation
- Ebony L. Mays
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN END PLUG STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE F...
- Publication number 20240153947
- Publication date May 9, 2024
- Intel Corporation
- Byron HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED WORD LINE CONTACT STRUCTURES IN THREE-DIMENSIONAL (3D) M...
- Publication number 20230402389
- Publication date Dec 14, 2023
- Intel Corporation
- Nanda Kumar Chakravarthi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILLING OPENINGS BY COMBINING NON-FLOWABLE AND FLOWABLE PROCESSES
- Publication number 20230128779
- Publication date Apr 27, 2023
- Intel Corporation
- Ebony L. Mays
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARYING CHANNEL WIDTH IN THREE-DIMENSIONAL MEMORY ARRAY
- Publication number 20230033086
- Publication date Feb 2, 2023
- Intel Corporation
- Chen WANG
- G11 - INFORMATION STORAGE
Information Patent Application
GAP-FILL FOR 3D NAND STAIRCASE
- Publication number 20220375870
- Publication date Nov 24, 2022
- Jung Chan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN END PLUG STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE F...
- Publication number 20220262795
- Publication date Aug 18, 2022
- Intel Corporation
- Byron HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED WORD LINE CONTACT STRUCTURES IN THREE-DIMENSIONAL (3D) M...
- Publication number 20210143100
- Publication date May 13, 2021
- Intel Corporation
- Nanda Kumar Chakravarthi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN END PLUG STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE F...
- Publication number 20210035972
- Publication date Feb 4, 2021
- Intel Corporation
- Byron HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILLING OPENINGS BY COMBINING NON-FLOWABLE AND FLOWABLE PROCESSES
- Publication number 20200365447
- Publication date Nov 19, 2020
- Intel Corporation
- Ebony L. Mays
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN END PLUG STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE F...
- Publication number 20200321333
- Publication date Oct 8, 2020
- Intel Corporation
- Byron HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING FIN-END STRESS-INDUCING FEATURES
- Publication number 20200058761
- Publication date Feb 20, 2020
- Intel Corporation
- Byron HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC GAP-FILL MATERIAL DEPOSITION
- Publication number 20190181003
- Publication date Jun 13, 2019
- Intel Corporation
- Jeanne L. LUCE
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FIN END PLUG STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE F...
- Publication number 20190164961
- Publication date May 30, 2019
- Byron HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOWABLE DIELECTRICS FROM VAPOR PHASE PRECURSORS
- Publication number 20190035673
- Publication date Jan 31, 2019
- Intel Corporation
- Ebony L. Mays
- H01 - BASIC ELECTRIC ELEMENTS

Ebony L. Mays

Person

Patents Grantslast 30 patents

Filling openings by combining non-flowable and flowable processes

Filling openings by combining non-flowable and flowable processes

Fin end plug structures for advanced integrated circuit structure f...

Fin end plug structures for advanced integrated circuit structure f...

Semiconductor device having fin-end stress-inducing features

Fin end plug structures for advanced integrated circuit structure f...

Dielectric gap-fill material deposition

Fin end plug structures for advanced integrated circuit structure f...

Patents Applicationslast 30 patents

FILLING OPENINGS BY COMBINING NON-FLOWABLE AND FLOWABLE PROCESSES

FIN END PLUG STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE F...

INTEGRATED WORD LINE CONTACT STRUCTURES IN THREE-DIMENSIONAL (3D) M...

FILLING OPENINGS BY COMBINING NON-FLOWABLE AND FLOWABLE PROCESSES

VARYING CHANNEL WIDTH IN THREE-DIMENSIONAL MEMORY ARRAY

GAP-FILL FOR 3D NAND STAIRCASE

FIN END PLUG STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE F...

INTEGRATED WORD LINE CONTACT STRUCTURES IN THREE-DIMENSIONAL (3D) M...

FIN END PLUG STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE F...

FILLING OPENINGS BY COMBINING NON-FLOWABLE AND FLOWABLE PROCESSES

FIN END PLUG STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE F...

SEMICONDUCTOR DEVICE HAVING FIN-END STRESS-INDUCING FEATURES

DIELECTRIC GAP-FILL MATERIAL DEPOSITION

FIN END PLUG STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE F...

FLOWABLE DIELECTRICS FROM VAPOR PHASE PRECURSORS