Edouard D. De Fresart

Person

Tempe, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Trench MOSFET shield poly contact
- Patent number 10,074,743
- Issue date Sep 11, 2018
- NXP USA, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing trench semiconductor devices with edge ter...
- Patent number 9,722,070
- Issue date Aug 1, 2017
- NXP USA, INC.
- Peilin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET shield poly contact
- Patent number 9,680,003
- Issue date Jun 13, 2017
- NXP USA, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture therefor
- Patent number 9,559,198
- Issue date Jan 31, 2017
- NXP USA, INC.
- Evgueniy Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination for trench gate FET
- Patent number 9,553,184
- Issue date Jan 24, 2017
- NXP USA, INC.
- Moaniss Zitouni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional power transistor with shallow body trench
- Patent number 9,472,662
- Issue date Oct 18, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Evgueniy Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor body control circuit and an integrated circuit
- Patent number 9,443,845
- Issue date Sep 13, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Evgueniy Stafanov
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Bidirectional trench FET with gate-based resurf
- Patent number 9,419,128
- Issue date Aug 16, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Moaniss Zitouni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate FET with self-aligned source contact
- Patent number 9,397,213
- Issue date Jul 19, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing trench semiconductor devices with edge ter...
- Patent number 9,368,576
- Issue date Jun 14, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Peilin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate FET with self-aligned source contact
- Patent number 9,368,620
- Issue date Jun 14, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device termination structures and methods
- Patent number 9,362,394
- Issue date Jun 7, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Moaniss Zitouni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Bidirectional MOSFET with suppressed bipolar snapback and method of...
- Patent number 9,324,800
- Issue date Apr 26, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Pon Sung Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET current sense structure and method
- Patent number 9,293,535
- Issue date Mar 22, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Peilin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional trench FET with gate-based resurf
- Patent number 9,178,027
- Issue date Nov 3, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Moaniss Zitouni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and related fabrication methods
- Patent number 9,105,495
- Issue date Aug 11, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Peilin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET structure and method
- Patent number 8,932,928
- Issue date Jan 13, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Peilin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench FET with source recess etch
- Patent number 8,895,394
- Issue date Nov 25, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET structure and method
- Patent number 8,759,909
- Issue date Jun 24, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Peilin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having reduced gate-drain capacitance
- Patent number 8,735,978
- Issue date May 27, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with enclosed void cavities
- Patent number 8,502,287
- Issue date Aug 6, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with low resistance back-side coupling
- Patent number 8,264,082
- Issue date Sep 11, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Edouard de Frésart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a vertical MOS transistor
- Patent number 8,143,126
- Issue date Mar 27, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Jingjing Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage TMOS semiconductor device with low gate charge structu...
- Patent number 8,030,153
- Issue date Oct 4, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Peilin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming semiconductor devices with low resistance back-...
- Patent number 8,021,926
- Issue date Sep 20, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Edouard de Frésart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating semiconductor devices having reduced gate-d...
- Patent number 7,919,388
- Issue date Apr 5, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor superjunction structure
- Patent number 7,893,491
- Issue date Feb 22, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Edouard D. deFresart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enclosed void cavity for low dielectric constant insulator
- Patent number 7,838,389
- Issue date Nov 23, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction trench device formation methods
- Patent number 7,833,858
- Issue date Nov 16, 2010
- Freesscale Semiconductor, Inc.
- Edouard D. deFresart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained semiconductor power device and method
- Patent number 7,651,918
- Issue date Jan 26, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Edouard D. de Frésart
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRENCH MOSFET SHIELD POLY CONTACT
- Publication number 20170288051
- Publication date Oct 5, 2017
- NXP USA, Inc.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET SHIELD POLY CONTACT
- Publication number 20160284838
- Publication date Sep 29, 2016
- FREESCALE SEMICONDUCTOR, INC.
- GANMING QIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MANUFACTURING TRENCH SEMICONDUCTOR DEVICES WITH EDGE TER...
- Publication number 20160276475
- Publication date Sep 22, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Peilin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL POWER TRANSISTOR WITH SHALLOW BODY TRENCH
- Publication number 20160247916
- Publication date Aug 25, 2016
- FREESCALE SEMICONDUCTOR, INC.
- EVGUENIY STEFANOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR BODY CONTROL CIRCUIT AND AN INTEGRATED CIRCUIT
- Publication number 20160247799
- Publication date Aug 25, 2016
- FREESCALE SEMICONDUCTOR, INC.
- EVGUENIY STAFANOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREFOR
- Publication number 20160197176
- Publication date Jul 7, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Evgueniy Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH GATE FET WITH SELF-ALIGNED SOURCE CONTACT
- Publication number 20160064556
- Publication date Mar 3, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE TERMINATION FOR TRENCH GATE FET
- Publication number 20160064546
- Publication date Mar 3, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Moaniss Zitouni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL TRENCH FET WITH GATE-BASED RESURF
- Publication number 20160049508
- Publication date Feb 18, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Moaniss Zitouni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICE TERMINATION STRUCTURES AND METHODS
- Publication number 20150372130
- Publication date Dec 24, 2015
- Freescale Semiconductor Inc.
- Moaniss Zitouni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS
- Publication number 20150162328
- Publication date Jun 11, 2015
- Peilin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MOSFET STRUCTURE AND METHOD
- Publication number 20140342518
- Publication date Nov 20, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Peilin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH GATE TRANSISTOR AND METHOD OF FABRICATING SAME
- Publication number 20140159146
- Publication date Jun 12, 2014
- Peilin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MOSFET CURRENT SENSE STRUCTURE AND METHOD
- Publication number 20140070313
- Publication date Mar 13, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Peilin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench FET with Source Recess Etch
- Publication number 20130344667
- Publication date Dec 26, 2013
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SEMICONDUCTOR DEVICES WITH EDGE TERMINATION STRUCTURES, AND...
- Publication number 20130307060
- Publication date Nov 21, 2013
- FREESCALE SEMICONDUCTOR, INC.
- PEILIN WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MOSFET STRUCTURE AND METHOD
- Publication number 20130299898
- Publication date Nov 14, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Peilin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH LOW RESISTANCE BACK-SIDE COUPLING
- Publication number 20110291278
- Publication date Dec 1, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Edouard de Frésart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING REDUCED GATE-DRAIN CAPACITANCE
- Publication number 20110147835
- Publication date Jun 23, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH LOW RESISTANCE BACK-SIDE COUPLING
- Publication number 20110068475
- Publication date Mar 24, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Edouard de Frésart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH ENCLOSED VOID CAVITIES
- Publication number 20110024806
- Publication date Feb 3, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENCLOSED VOID CAVITY FOR LOW DIELECTRIC CONSTANT INSULATOR
- Publication number 20090294843
- Publication date Dec 3, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERJUNCTION TRENCH DEVICE FORMATION METHODS
- Publication number 20090286372
- Publication date Nov 19, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Edouard D. de Frésart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUPERJUNCTION STRUCTURE
- Publication number 20090121257
- Publication date May 14, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Edouard D. deFresart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE TMOS SEMICONDUCTOR DEVICE WITH LOW GATE CHARGE STRUCTU...
- Publication number 20090108339
- Publication date Apr 30, 2009
- Peilin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERJUNCTION POWER MOSFET
- Publication number 20080197409
- Publication date Aug 21, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Edouard D. deFresart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor superjunction structure
- Publication number 20080048175
- Publication date Feb 28, 2008
- Edouard D. de Frésart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained semiconductor power device and method
- Publication number 20080048257
- Publication date Feb 28, 2008
- Edouard D. de Fresart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench power device and method
- Publication number 20080048258
- Publication date Feb 28, 2008
- Edouard D. de Fresart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Superjunction trench device and method
- Publication number 20080050877
- Publication date Feb 28, 2008
- Edouard D. de Fresart
- H01 - BASIC ELECTRIC ELEMENTS

Edouard D. De Fresart

Person

Patents Grantslast 30 patents

Trench MOSFET shield poly contact

Methods of manufacturing trench semiconductor devices with edge ter...

Trench MOSFET shield poly contact

Semiconductor device and method of manufacture therefor

Edge termination for trench gate FET

Bidirectional power transistor with shallow body trench

Transistor body control circuit and an integrated circuit

Bidirectional trench FET with gate-based resurf

Trench gate FET with self-aligned source contact

Methods of manufacturing trench semiconductor devices with edge ter...

Trench gate FET with self-aligned source contact

Power device termination structures and methods

Bidirectional MOSFET with suppressed bipolar snapback and method of...

Power MOSFET current sense structure and method

Bidirectional trench FET with gate-based resurf

Semiconductor device and related fabrication methods

Power MOSFET structure and method

Trench FET with source recess etch

Power MOSFET structure and method

Semiconductor devices having reduced gate-drain capacitance

Semiconductor devices with enclosed void cavities

Semiconductor devices with low resistance back-side coupling

Method for forming a vertical MOS transistor

High voltage TMOS semiconductor device with low gate charge structu...

Methods for forming semiconductor devices with low resistance back-...

Methods for fabricating semiconductor devices having reduced gate-d...

Semiconductor superjunction structure

Enclosed void cavity for low dielectric constant insulator

Superjunction trench device formation methods

Strained semiconductor power device and method

Patents Applicationslast 30 patents

TRENCH MOSFET SHIELD POLY CONTACT

TRENCH MOSFET SHIELD POLY CONTACT

METHODS OF MANUFACTURING TRENCH SEMICONDUCTOR DEVICES WITH EDGE TER...

BIDIRECTIONAL POWER TRANSISTOR WITH SHALLOW BODY TRENCH

TRANSISTOR BODY CONTROL CIRCUIT AND AN INTEGRATED CIRCUIT

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREFOR

TRENCH GATE FET WITH SELF-ALIGNED SOURCE CONTACT

EDGE TERMINATION FOR TRENCH GATE FET

BIDIRECTIONAL TRENCH FET WITH GATE-BASED RESURF

POWER DEVICE TERMINATION STRUCTURES AND METHODS

SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS

POWER MOSFET STRUCTURE AND METHOD

TRENCH GATE TRANSISTOR AND METHOD OF FABRICATING SAME

POWER MOSFET CURRENT SENSE STRUCTURE AND METHOD

Trench FET with Source Recess Etch

TRENCH SEMICONDUCTOR DEVICES WITH EDGE TERMINATION STRUCTURES, AND...

POWER MOSFET STRUCTURE AND METHOD

SEMICONDUCTOR DEVICES WITH LOW RESISTANCE BACK-SIDE COUPLING

SEMICONDUCTOR DEVICES HAVING REDUCED GATE-DRAIN CAPACITANCE

SEMICONDUCTOR DEVICE WITH LOW RESISTANCE BACK-SIDE COUPLING

SEMICONDUCTOR DEVICES WITH ENCLOSED VOID CAVITIES

ENCLOSED VOID CAVITY FOR LOW DIELECTRIC CONSTANT INSULATOR

SUPERJUNCTION TRENCH DEVICE FORMATION METHODS

SEMICONDUCTOR SUPERJUNCTION STRUCTURE

HIGH VOLTAGE TMOS SEMICONDUCTOR DEVICE WITH LOW GATE CHARGE STRUCTU...

SUPERJUNCTION POWER MOSFET

Semiconductor superjunction structure

Strained semiconductor power device and method

Trench power device and method

Superjunction trench device and method