Eduardo M. Chumbes

Person

Andover, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Strain compensated rare earth group III-nitride heterostructures
- Patent number 11,942,919
- Issue date Mar 26, 2024
- Raytheon Company
- John A. Logan
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Field effect transistor having field plate
- Patent number 11,862,691
- Issue date Jan 2, 2024
- Raytheon Company
- Michael S. Davis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable monolithic group III-nitride filter banks
- Patent number 11,848,662
- Issue date Dec 19, 2023
- Raytheon Company
- Jason C. Soric
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V semiconductor structures having crystalline regrowth la...
- Patent number 11,784,248
- Issue date Oct 10, 2023
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photonic devices
- Patent number 11,726,258
- Issue date Aug 15, 2023
- Raytheon BBN Technologies Corp.
- Mohammad Soltani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photonic devices
- Patent number 11,709,314
- Issue date Jul 25, 2023
- Raytheon BBN Technologies Corp.
- Mohammad Soltani
- G02 - OPTICS
Information Patent Grant
Photonic devices
- Patent number 11,703,637
- Issue date Jul 18, 2023
- Raytheon BBN Technologies Corp.
- Mohammad Soltani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V semiconductor structures having crystalline regrowth la...
- Patent number 11,515,410
- Issue date Nov 29, 2022
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photonic devices
- Patent number 11,262,604
- Issue date Mar 1, 2022
- Raytheon BBN Technologies Corp.
- Mohammad Soltani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride structures having low capacitance gate contacts integrated...
- Patent number 11,177,216
- Issue date Nov 16, 2021
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photonic devices
- Patent number 11,054,673
- Issue date Jul 6, 2021
- Raytheon BBN Technologies Corp.
- Mohammad Soltani
- G02 - OPTICS
Information Patent Grant
Photonic and electric devices on a common layer
- Patent number 10,890,712
- Issue date Jan 12, 2021
- Raytheon BBN Technologies Corp.
- Mohammad Soitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III—nitride double-heterojunction field effect transistor
- Patent number 10,276,705
- Issue date Apr 30, 2019
- Raytheon Company
- Brian D. Schultz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride structure having gold-free contact and methods for forming...
- Patent number 10,224,285
- Issue date Mar 5, 2019
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride structure having gold-free contact and methods for forming...
- Patent number 10,096,550
- Issue date Oct 9, 2018
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III—nitride double-heterojunction field effect transistor
- Patent number 9,960,262
- Issue date May 1, 2018
- Raytheon Company
- Brian D. Schultz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures having a gate field plate and methods for...
- Patent number 9,419,083
- Issue date Aug 16, 2016
- Raytheon Company
- John P. Bettencourt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped barrier layers in epitaxial group III nitrides
- Patent number 9,419,125
- Issue date Aug 16, 2016
- Raytheon Company
- Brian D. Schultz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction field effect transistor (HFET) variable gain amplifi...
- Patent number 9,379,228
- Issue date Jun 28, 2016
- Raytheon Company
- Jeffrey Saunders
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with layers having different hydrogen contents
- Patent number 9,293,379
- Issue date Mar 22, 2016
- Raytheon Company
- Eduardo M. Chumbes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double heterojunction group III-nitride structures
- Patent number 9,231,064
- Issue date Jan 5, 2016
- Raytheon Company
- Shahed Reza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride devices having low ohmic contact resistance
- Patent number 8,772,786
- Issue date Jul 8, 2014
- Raytheon Company
- Kamal Tabatabaie
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
T-GATE TRANSISTOR WITH MINI FIELD PLATE AND ANGLED GATE STEM
- Publication number 20240072130
- Publication date Feb 29, 2024
- Raytheon Company
- Matthew Thomas Dejarld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTONIC DEVICES
- Publication number 20230333316
- Publication date Oct 19, 2023
- RAYTHEON BBN TECHNOLOGIES CORP.
- Mohammad Soltani
- G02 - OPTICS
Information Patent Application
AlN CHANNEL HETEROSTRUCTURE FIELD EFFECT TRANSISTOR
- Publication number 20230207677
- Publication date Jun 29, 2023
- Raytheon Company
- Eduardo M. Chumbes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-V SEMICONDUCTOR STRUCTURES HAVING CRYSTALLINE REGROWTH LA...
- Publication number 20230073459
- Publication date Mar 9, 2023
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN COMPENSATED RARE EARTH GROUP III-NITRIDE HETEROSTRUCTURES
- Publication number 20220224306
- Publication date Jul 14, 2022
- Raytheon Company
- John A. Logan
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
PHOTONIC DEVICES
- Publication number 20220146865
- Publication date May 12, 2022
- RAYTHEON BBN TECHNOLOGIES CORP.
- Mohammad Soltani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTONIC DEVICES
- Publication number 20220146864
- Publication date May 12, 2022
- RAYTHEON BBN TECHNOLOGIES CORP.
- Mohammad Soltani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-V SEMICONDUCTOR STRUCTURES HAVING CRYSTALLINE REGROWTH LA...
- Publication number 20220140126
- Publication date May 5, 2022
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTONIC DEVICES
- Publication number 20220137438
- Publication date May 5, 2022
- RAYTHEON BBN TECHNOLOGIES CORP.
- Mohammad Soltani
- G02 - OPTICS
Information Patent Application
TUNABLE MONOLITHIC GROUP III-NITRIDE FILTER BANKS
- Publication number 20220085795
- Publication date Mar 17, 2022
- Raytheon Company
- Jason C. Soric
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-Temperature Deposition of High-Quality Aluminum Nitride Films f...
- Publication number 20210249331
- Publication date Aug 12, 2021
- The Regents of the University of California
- Scott Ueda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR HAVING FIELD PLATE
- Publication number 20210134965
- Publication date May 6, 2021
- Raytheon Company
- Michael S. Davis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTONIC DEVICES
- Publication number 20200301175
- Publication date Sep 24, 2020
- RAYTHEON BBN TECHNOLOGIES CORP.
- Mohammad Soltani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE STRUCTURES HAVING LOW CAPACITANCE GATE CONTACTS INTEGRATED...
- Publication number 20200083167
- Publication date Mar 12, 2020
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTONIC AND ELECTRIC DEVICES ON A COMMON LAYER
- Publication number 20190346624
- Publication date Nov 14, 2019
- RAYTHEON BBN TECHNOLOGIES CORP.
- Mohammad Soltani
- G02 - OPTICS
Information Patent Application
PHOTONIC DEVICES
- Publication number 20190346705
- Publication date Nov 14, 2019
- RAYTHEON BBN TECHNOLOGIES CORP.
- Mohammad Soltani
- G02 - OPTICS
Information Patent Application
NITRIDE STRUCTURE HAVING GOLD-FREE CONTACT AND METHODS FOR FORMING...
- Publication number 20180240753
- Publication date Aug 23, 2018
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE STRUCTURE HAVING GOLD-FREE CONTACT AND METHODS FOR FORMING...
- Publication number 20180240754
- Publication date Aug 23, 2018
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III - NITRIDE DOUBLE-HETEROJUNCTION FIELD EFFECT TRANSISTOR
- Publication number 20180204940
- Publication date Jul 19, 2018
- Raytheon Company
- Brian D. Schultz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III - NITRIDE DOUBLE-HETEROJUNCTION FIELD EFFECT TRANSISTOR
- Publication number 20170250273
- Publication date Aug 31, 2017
- Raytheon Company
- Brian D. Schultz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES HAVING A GATE FIELD PLATE AND METHODS FOR...
- Publication number 20160149006
- Publication date May 26, 2016
- Raytheon Company
- John P. Bettencourt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION FIELD EFFECT TRANSISTOR (HFET) VARIABLE GAIN AMPLIFI...
- Publication number 20160149022
- Publication date May 26, 2016
- Raytheon Company
- Jeffrey Saunders
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE DEVICES HAVING LOW OHMIC CONTACT RESISTANCE
- Publication number 20140014966
- Publication date Jan 16, 2014
- Raytheon Company
- Kamal Tabatabaie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD
- Publication number 20110049581
- Publication date Mar 3, 2011
- Raytheon Company
- Eduardo M. Chumbes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING PLURAL BACK-BARRIER LAYERS FOR IMPRO...
- Publication number 20080258135
- Publication date Oct 23, 2008
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS

Eduardo M. Chumbes

Person

Patents Grantslast 30 patents

Strain compensated rare earth group III-nitride heterostructures

Field effect transistor having field plate

Tunable monolithic group III-nitride filter banks

Group III-V semiconductor structures having crystalline regrowth la...

Photonic devices

Photonic devices

Photonic devices

Group III-V semiconductor structures having crystalline regrowth la...

Photonic devices

Nitride structures having low capacitance gate contacts integrated...

Photonic devices

Photonic and electric devices on a common layer

Group III—nitride double-heterojunction field effect transistor

Nitride structure having gold-free contact and methods for forming...

Nitride structure having gold-free contact and methods for forming...

Group III—nitride double-heterojunction field effect transistor

Semiconductor structures having a gate field plate and methods for...

Doped barrier layers in epitaxial group III nitrides

Heterojunction field effect transistor (HFET) variable gain amplifi...

Semiconductor structure with layers having different hydrogen contents

Double heterojunction group III-nitride structures

Gallium nitride devices having low ohmic contact resistance

Patents Applicationslast 30 patents

T-GATE TRANSISTOR WITH MINI FIELD PLATE AND ANGLED GATE STEM

PHOTONIC DEVICES

AlN CHANNEL HETEROSTRUCTURE FIELD EFFECT TRANSISTOR

GROUP III-V SEMICONDUCTOR STRUCTURES HAVING CRYSTALLINE REGROWTH LA...

STRAIN COMPENSATED RARE EARTH GROUP III-NITRIDE HETEROSTRUCTURES

PHOTONIC DEVICES

PHOTONIC DEVICES

GROUP III-V SEMICONDUCTOR STRUCTURES HAVING CRYSTALLINE REGROWTH LA...

PHOTONIC DEVICES

TUNABLE MONOLITHIC GROUP III-NITRIDE FILTER BANKS

Low-Temperature Deposition of High-Quality Aluminum Nitride Films f...

FIELD EFFECT TRANSISTOR HAVING FIELD PLATE

PHOTONIC DEVICES

NITRIDE STRUCTURES HAVING LOW CAPACITANCE GATE CONTACTS INTEGRATED...

PHOTONIC AND ELECTRIC DEVICES ON A COMMON LAYER

PHOTONIC DEVICES

NITRIDE STRUCTURE HAVING GOLD-FREE CONTACT AND METHODS FOR FORMING...

NITRIDE STRUCTURE HAVING GOLD-FREE CONTACT AND METHODS FOR FORMING...

GROUP III - NITRIDE DOUBLE-HETEROJUNCTION FIELD EFFECT TRANSISTOR

GROUP III - NITRIDE DOUBLE-HETEROJUNCTION FIELD EFFECT TRANSISTOR

SEMICONDUCTOR STRUCTURES HAVING A GATE FIELD PLATE AND METHODS FOR...

HETEROJUNCTION FIELD EFFECT TRANSISTOR (HFET) VARIABLE GAIN AMPLIFI...

GALLIUM NITRIDE DEVICES HAVING LOW OHMIC CONTACT RESISTANCE

SEMICONDUCTOR STRUCTURE AND METHOD

SEMICONDUCTOR STRUCTURE HAVING PLURAL BACK-BARRIER LAYERS FOR IMPRO...