Edward Preisler

Person

San Clemente, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing a semiconductor structure having group III...
- Patent number 12,009,437
- Issue date Jun 11, 2024
- Newport Fab, LLC
- Edward Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for process control monitoring for group III-V...
- Patent number 11,929,442
- Issue date Mar 12, 2024
- Newport Fab, LLC
- Edward Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon nitride hard mask for epitaxial germanium on silicon
- Patent number 11,830,961
- Issue date Nov 28, 2023
- Newport Fab, LLC
- Difeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having group III-V device on group IV subst...
- Patent number 11,581,452
- Issue date Feb 14, 2023
- Newport Fab, LLC
- Edward Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having group III-V device on group IV subst...
- Patent number 11,545,587
- Issue date Jan 3, 2023
- Newport Fab, LLC
- Edward Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having group III-V device on group IV subst...
- Patent number 11,349,280
- Issue date May 31, 2022
- Newport Fab, LLC
- Edward Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having group III-V chiplet on group IV subs...
- Patent number 11,296,482
- Issue date Apr 5, 2022
- Newport Fab, LLC
- Edward Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nickel silicide in bipolar complementary-metal-oxide-semiconductor...
- Patent number 11,276,682
- Issue date Mar 15, 2022
- Newport Fab, LLC
- Mantavya Sinha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium on insulator for CMOS imagers in the short wave infrared
- Patent number 11,271,028
- Issue date Mar 8, 2022
- TriEye Ltd.
- Uriel Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of semiconductor structure having group III-V device on...
- Patent number 11,233,159
- Issue date Jan 25, 2022
- Newport Fab, LLC
- Edward Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having porous semiconductor segment for RF...
- Patent number 11,195,920
- Issue date Dec 7, 2021
- Newport Fab, LLC
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having porous semiconductor layer for RF de...
- Patent number 11,164,740
- Issue date Nov 2, 2021
- Newport Fab, LLC
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anode up—cathode down silicon and germanium photodiode
- Patent number 11,081,610
- Issue date Aug 3, 2021
- Newport Fab, LLC
- Difeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated optical/electrical probe card for testing optical, elect...
- Patent number 10,996,081
- Issue date May 4, 2021
- Newport Fab, LLC
- Yasir Qamar
- G02 - OPTICS
Information Patent Grant
High performance SiGe heterojunction bipolar transistors built on t...
- Patent number 10,991,631
- Issue date Apr 27, 2021
- Newport Fab, LLC
- Edward J. Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabrication of germanium photodiode with silicon cap
- Patent number 10,892,374
- Issue date Jan 12, 2021
- Newport Fab, LLC
- Difeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium photodiode with silicon cap
- Patent number 10,892,373
- Issue date Jan 12, 2021
- Newport Fab, LLC
- Difeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor fabrication using resist mask edg...
- Patent number 10,797,132
- Issue date Oct 6, 2020
- Newport Fab, LLC
- Santosh Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator (SOI) die including a light emitting layer ped...
- Patent number 10,649,137
- Issue date May 12, 2020
- Newport Fab, LLC
- Edward Preisler
- G02 - OPTICS
Information Patent Grant
High performance SiGe heterojunction bipolar transistors built on t...
- Patent number 10,622,262
- Issue date Apr 14, 2020
- Newport Fab. LLC
- Edward J. Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiGe heterojunction bipolar transistor with crystalline raised base...
- Patent number 10,529,836
- Issue date Jan 7, 2020
- Newport Fab, LLC
- Edward J. Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amplifier using parallel high-speed and low-speed transistors
- Patent number 10,469,035
- Issue date Nov 5, 2019
- Newport Fab, LLC
- Jie Zheng
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Linearity and lateral isolation in a BiCMOS process through counter...
- Patent number 10,347,625
- Issue date Jul 9, 2019
- Newport Fab, LLC
- Kurt A. Moen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate isolation for low-loss radio frequency (RF) circuits
- Patent number 10,325,907
- Issue date Jun 18, 2019
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Kurt A. Moen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate isolation for low-loss radio frequency (RF) circuits
- Patent number 10,319,716
- Issue date Jun 11, 2019
- Newport Fab, LLC
- Kurt A. Moen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BiCMOS integration using a shared SiGe layer
- Patent number 10,297,591
- Issue date May 21, 2019
- Newport Fab, LLC
- Edward Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BiCMOS integration with reduced masking steps
- Patent number 10,290,630
- Issue date May 14, 2019
- Newport Fab, LLC
- Edward Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Linearity and lateral isolation in a BiCMOS process through counter...
- Patent number 10,290,631
- Issue date May 14, 2019
- Newport Fab, LLC
- Kurt A. Moen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-broadband transimpedance amplifiers (tia) for optical fiber c...
- Patent number 10,243,523
- Issue date Mar 26, 2019
- The Regents of the University of California
- Payam Heydari
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Bulk CMOS RF switch with reduced parasitic capacitance
- Patent number 10,177,045
- Issue date Jan 8, 2019
- Newport Fab, LLC
- Edward J. Preisler
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Integration of Optoelectronic Devices Comprising Lithium Niobate or...
- Publication number 20240142809
- Publication date May 2, 2024
- Newport Fab, LLC dba Tower Semiconductor Newport Beach
- Edward Preisler
- G02 - OPTICS
Information Patent Application
Tantalum Nitride Resistive Heater for Thermally-Tunable Photonics D...
- Publication number 20240126107
- Publication date Apr 18, 2024
- Newport Fab, LLC dba Tower Semiconductor Newport Newport Beach
- Zhirong Tang
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
Efficient Integration of a First Substrate without Solder Bumps wit...
- Publication number 20240128209
- Publication date Apr 18, 2024
- Newport Fab, LLC dba Tower Semiconductor Newport Beach
- Edward Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Platinum-Based Solder Body Contacts for Integration of a First Subs...
- Publication number 20240128213
- Publication date Apr 18, 2024
- Newport Fab. LLC dba Tower Semiconductor Newport Beach
- Zhirong Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stress-Reduced Silicon Photonics Semiconductor Wafer
- Publication number 20230369242
- Publication date Nov 16, 2023
- Newport Fab, LLC dba Tower Semiconductor Newport Beach
- Oleg Martynov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method For Manufacturing a Semiconductor Structure Having Group III...
- Publication number 20230049138
- Publication date Feb 16, 2023
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Edward Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nickel Silicide in Bipolar Complementary-Metal-Oxide-Semiconductor...
- Publication number 20220068911
- Publication date Mar 3, 2022
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Mantavya Sinha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nickel Silicide in Bipolar Complementary-Metal-Oxide-Semiconductor...
- Publication number 20220068913
- Publication date Mar 3, 2022
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Mantavya Sinha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing Nickel Silicide in Bipolar Complementary-Me...
- Publication number 20220068912
- Publication date Mar 3, 2022
- Newport Fab, LLC dba Jazz Semiconductor.
- Mantavya Sinha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing Bipolar Complementary-Metal-Oxide-Semicondu...
- Publication number 20220068914
- Publication date Mar 3, 2022
- Newport Fab, LLC dba Jazz Semiconductor.
- Mantavya Sinha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming a Semiconductor Structure Having a Porous Semico...
- Publication number 20210375618
- Publication date Dec 2, 2021
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure Having Group III-V Device on Group IV Subst...
- Publication number 20210217921
- Publication date Jul 15, 2021
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Edward Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure Having Group III-V Chiplet on Group IV Subs...
- Publication number 20210218225
- Publication date Jul 15, 2021
- Newport Fab, LLC dba Jazz Semiconductor.
- Edward Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure Having Group III-V Device on Group IV Subst...
- Publication number 20210217903
- Publication date Jul 15, 2021
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Edward Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of Semiconductor Structure Having Group III-V Device on...
- Publication number 20210217904
- Publication date Jul 15, 2021
- Newport Fab, LLC dba Jazz Semiconductor.
- Edward Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-V Device on Group IV Substrate Using Contacts with Precur...
- Publication number 20210217922
- Publication date Jul 15, 2021
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Edward Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure Having Group III-V Device on Group IV Subst...
- Publication number 20210218219
- Publication date Jul 15, 2021
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Edward Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for Process Control Monitoring for Group III-V...
- Publication number 20210217908
- Publication date Jul 15, 2021
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Edward Preisler
- G01 - MEASURING TESTING
Information Patent Application
Semiconductor Structure Having Porous Semiconductor Layer for RF De...
- Publication number 20210111019
- Publication date Apr 15, 2021
- Newport Fab, LLC dba Jazz Semiconductor.
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure Having Porous Semiconductor Segment for RF...
- Publication number 20210111249
- Publication date Apr 15, 2021
- Newport Fab, LLC dba Jazz Semiconductor.
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM ON INSULATOR FOR CMOS IMAGERS IN THE SHORT WAVE INFRARED
- Publication number 20200365630
- Publication date Nov 19, 2020
- TriEye Ltd.
- Uriel Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabrication of Germanium Photodiode with Silicon Cap
- Publication number 20200295220
- Publication date Sep 17, 2020
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Difeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Germanium Photodiode with Silicon Cap
- Publication number 20200259036
- Publication date Aug 13, 2020
- Newport Fab, LLC dba Jazz Semiconductor.
- Difeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Anode Up - Cathode Down Silicon and Germanium Photodiode
- Publication number 20200259037
- Publication date Aug 13, 2020
- Newport Fab, LLC dba Jazz Semiconductor.
- Difeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON NITRIDE HARD MASK FOR EPITAXIAL GERMANIUM ON SILICON
- Publication number 20200075792
- Publication date Mar 5, 2020
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Difeng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiGe HETEROJUNCTION BIPOLAR TRANSISTOR WITH CRYSTALLINE RAISED BASE...
- Publication number 20200006537
- Publication date Jan 2, 2020
- Newport Fab, LLC dba Jazz Semiconductor,Inc
- Edward J. Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction Bipolar Transistor Fabrication Using Resist Mask Edg...
- Publication number 20200006482
- Publication date Jan 2, 2020
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Santosh Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Amplifier Using Parallel High-Speed And Low-Speed Transistors
- Publication number 20190288648
- Publication date Sep 19, 2019
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Jie Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Performance SiGe Heterojunction Bipolar Transistors Built On T...
- Publication number 20190109054
- Publication date Apr 11, 2019
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Edward J. Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE SiGe HETEROJUNCTION BIPOLAR TRANSISTORS BUILT ON T...
- Publication number 20190109055
- Publication date Apr 11, 2019
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Edward J. Preisler
- H01 - BASIC ELECTRIC ELEMENTS

Edward Preisler

Person

Patents Grantslast 30 patents

Method for manufacturing a semiconductor structure having group III...

Structure and method for process control monitoring for group III-V...

Silicon nitride hard mask for epitaxial germanium on silicon

Semiconductor structure having group III-V device on group IV subst...

Semiconductor structure having group III-V device on group IV subst...

Semiconductor structure having group III-V device on group IV subst...

Semiconductor structure having group III-V chiplet on group IV subs...

Nickel silicide in bipolar complementary-metal-oxide-semiconductor...

Germanium on insulator for CMOS imagers in the short wave infrared

Fabrication of semiconductor structure having group III-V device on...

Semiconductor structure having porous semiconductor segment for RF...

Semiconductor structure having porous semiconductor layer for RF de...

Anode up—cathode down silicon and germanium photodiode

Integrated optical/electrical probe card for testing optical, elect...

High performance SiGe heterojunction bipolar transistors built on t...

Method for fabrication of germanium photodiode with silicon cap

Germanium photodiode with silicon cap

Heterojunction bipolar transistor fabrication using resist mask edg...

Silicon-on-insulator (SOI) die including a light emitting layer ped...

High performance SiGe heterojunction bipolar transistors built on t...

SiGe heterojunction bipolar transistor with crystalline raised base...

Amplifier using parallel high-speed and low-speed transistors

Linearity and lateral isolation in a BiCMOS process through counter...

Substrate isolation for low-loss radio frequency (RF) circuits

Substrate isolation for low-loss radio frequency (RF) circuits

BiCMOS integration using a shared SiGe layer

BiCMOS integration with reduced masking steps

Linearity and lateral isolation in a BiCMOS process through counter...

Ultra-broadband transimpedance amplifiers (tia) for optical fiber c...

Bulk CMOS RF switch with reduced parasitic capacitance

Patents Applicationslast 30 patents

Integration of Optoelectronic Devices Comprising Lithium Niobate or...

Tantalum Nitride Resistive Heater for Thermally-Tunable Photonics D...

Efficient Integration of a First Substrate without Solder Bumps wit...

Platinum-Based Solder Body Contacts for Integration of a First Subs...

Stress-Reduced Silicon Photonics Semiconductor Wafer

Method For Manufacturing a Semiconductor Structure Having Group III...

Nickel Silicide in Bipolar Complementary-Metal-Oxide-Semiconductor...

Nickel Silicide in Bipolar Complementary-Metal-Oxide-Semiconductor...

Method of Manufacturing Nickel Silicide in Bipolar Complementary-Me...

Method of Manufacturing Bipolar Complementary-Metal-Oxide-Semicondu...

Method for Forming a Semiconductor Structure Having a Porous Semico...

Semiconductor Structure Having Group III-V Device on Group IV Subst...

Semiconductor Structure Having Group III-V Chiplet on Group IV Subs...

Semiconductor Structure Having Group III-V Device on Group IV Subst...

Fabrication of Semiconductor Structure Having Group III-V Device on...

Group III-V Device on Group IV Substrate Using Contacts with Precur...

Semiconductor Structure Having Group III-V Device on Group IV Subst...

Structure and Method for Process Control Monitoring for Group III-V...

Semiconductor Structure Having Porous Semiconductor Layer for RF De...

Semiconductor Structure Having Porous Semiconductor Segment for RF...

GERMANIUM ON INSULATOR FOR CMOS IMAGERS IN THE SHORT WAVE INFRARED

Method for Fabrication of Germanium Photodiode with Silicon Cap

Germanium Photodiode with Silicon Cap

Anode Up - Cathode Down Silicon and Germanium Photodiode

SILICON NITRIDE HARD MASK FOR EPITAXIAL GERMANIUM ON SILICON

SiGe HETEROJUNCTION BIPOLAR TRANSISTOR WITH CRYSTALLINE RAISED BASE...

Heterojunction Bipolar Transistor Fabrication Using Resist Mask Edg...

Amplifier Using Parallel High-Speed And Low-Speed Transistors

High Performance SiGe Heterojunction Bipolar Transistors Built On T...

HIGH PERFORMANCE SiGe HETEROJUNCTION BIPOLAR TRANSISTORS BUILT ON T...