Edward Semenas

Person

Allentown, PA, US

People

Patents Grantslast 30 patents

Information Patent Grant
SiC single crystal sublimation growth apparatus
- Patent number 11,761,117
- Issue date Sep 19, 2023
- II-VI DELAWARE, INC.
- Avinash Gupta
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal sublimation growth apparatus
- Patent number 11,149,359
- Issue date Oct 19, 2021
- II-VI DELAWARE, INC.
- Avinash Gupta
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal sublimation growth method and apparatus
- Patent number 10,294,584
- Issue date May 21, 2019
- II-VI Incorporated
- Avinash K. Gupta
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystals with reduced dislocation density grown by step-...
- Patent number 8,871,025
- Issue date Oct 28, 2014
- II-VI Incorporated
- Avinash Gupta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Fabrication of SiC substrates with low warp and bow
- Patent number 8,449,671
- Issue date May 28, 2013
- II-VI Incorporated
- Ping Wu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Guided diameter SiC sublimation growth with multi-layer growth guide
- Patent number 8,313,720
- Issue date Nov 20, 2012
- II-VI Incorporated
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Grant
System for forming SiC crystals having spatially uniform doping imp...
- Patent number 8,216,369
- Issue date Jul 10, 2012
- II-VI Incorporated
- Avinash K. Gupta
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of annealing a sublimation grown crystal
- Patent number 7,767,022
- Issue date Aug 3, 2010
- II-VI Incorporated
- Avinash K. Gupta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of and system for forming SiC crystals having spatially unif...
- Patent number 7,608,524
- Issue date Oct 27, 2009
- II-VI Incorporated
- Avinash K. Gupta
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Reduction of carbon inclusions in sublimation grown SiC single crys...
- Patent number 7,547,360
- Issue date Jun 16, 2009
- II-VI Incorporated
- Avinash K. Gupta
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SiC Single Crystal Sublimation Growth Apparatus
- Publication number 20220002906
- Publication date Jan 6, 2022
- Avinash Gupta
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC Single Crystal Sublimation Growth Apparatus
- Publication number 20190249332
- Publication date Aug 15, 2019
- II-VI Incorporated
- Avinash K. Gupta
- C30 - CRYSTAL GROWTH
Information Patent Application
SUBLIMATION GROWTH OF SIC SINGLE CRYSTALS
- Publication number 20120285370
- Publication date Nov 15, 2012
- II-VI Incorporated
- Avinash K. Gupta
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL SUBLIMATION GROWTH METHOD AND APPARATUS
- Publication number 20120103249
- Publication date May 3, 2012
- II-VI Incorporated
- Avinash K. Gupta
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC Crystals Having Spatially Uniform Doping Impurities
- Publication number 20110303884
- Publication date Dec 15, 2011
- II-VI Incorporated
- Avinash K. Gupta
- C30 - CRYSTAL GROWTH
Information Patent Application
FABRICATION OF SIC SUBSTRATES WITH LOW WARP AND BOW
- Publication number 20100180814
- Publication date Jul 22, 2010
- II-VI Incorporated
- Ping Wu
- C30 - CRYSTAL GROWTH
Information Patent Application
GUIDED DIAMETER SiC SUBLIMATION GROWTH WITH MULTI-LAYER GROWTH GUIDE
- Publication number 20100061914
- Publication date Mar 11, 2010
- II-VI Incorporated
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTALS WITH REDUCED DISLOCATION DENSITY GROWN BY STEP-...
- Publication number 20100031877
- Publication date Feb 11, 2010
- II-VI Incorporated
- Avinash Gupta
- C30 - CRYSTAL GROWTH
Information Patent Application
System for Forming SiC Crystals Having Spatially Uniform Doping Imp...
- Publication number 20100018455
- Publication date Jan 28, 2010
- II-VI Incorporated
- Avinash K. Gupta
- C30 - CRYSTAL GROWTH
Information Patent Application
Low-Doped Semi-Insulating Sic Crystals and Method
- Publication number 20080190355
- Publication date Aug 14, 2008
- II-VI Incorporated
- Jihong Chen
- C30 - CRYSTAL GROWTH
Information Patent Application
Reduction of carbon inclusions in sublimation grown SiC single crys...
- Publication number 20080115719
- Publication date May 22, 2008
- II-VI Incorporated
- Avinash K. Gupta
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of and system for forming SiC crystals having spatially unif...
- Publication number 20060243984
- Publication date Nov 2, 2006
- II-VI Incorporated
- Avinash K. Gupta
- C30 - CRYSTAL GROWTH

Edward Semenas

Person

Patents Grantslast 30 patents

SiC single crystal sublimation growth apparatus

SiC single crystal sublimation growth apparatus

SiC single crystal sublimation growth method and apparatus

SiC single crystals with reduced dislocation density grown by step-...

Fabrication of SiC substrates with low warp and bow

Guided diameter SiC sublimation growth with multi-layer growth guide

System for forming SiC crystals having spatially uniform doping imp...

Method of annealing a sublimation grown crystal

Method of and system for forming SiC crystals having spatially unif...

Reduction of carbon inclusions in sublimation grown SiC single crys...

Patents Applicationslast 30 patents

SiC Single Crystal Sublimation Growth Apparatus

SiC Single Crystal Sublimation Growth Apparatus

SUBLIMATION GROWTH OF SIC SINGLE CRYSTALS

SIC SINGLE CRYSTAL SUBLIMATION GROWTH METHOD AND APPARATUS

SiC Crystals Having Spatially Uniform Doping Impurities

FABRICATION OF SIC SUBSTRATES WITH LOW WARP AND BOW

GUIDED DIAMETER SiC SUBLIMATION GROWTH WITH MULTI-LAYER GROWTH GUIDE

SIC SINGLE CRYSTALS WITH REDUCED DISLOCATION DENSITY GROWN BY STEP-...

System for Forming SiC Crystals Having Spatially Uniform Doping Imp...

Low-Doped Semi-Insulating Sic Crystals and Method

Reduction of carbon inclusions in sublimation grown SiC single crys...

Method of and system for forming SiC crystals having spatially unif...