Edwin L. Piner

Person

Cary, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor material having a compositionally-graded transition l...
- Patent number 10,177,229
- Issue date Jan 8, 2019
- MACOM Technology Solutions Holdings, Inc.
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride materials and methods associated with the same
- Patent number 10,096,701
- Issue date Oct 9, 2018
- Infineon Technologies Americas Corp.
- Edwin L. Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with compositionally-graded transition layer
- Patent number 9,461,119
- Issue date Oct 4, 2016
- Infineon Technologies Americas Corp.
- T. Warren Weeks
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
III-nitride based semiconductor structure
- Patent number 9,437,687
- Issue date Sep 6, 2016
- Infineon Technologies Americas Corp.
- T. Warren Weeks
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Gallium nitride devices with discontinuously graded transition layer
- Patent number 9,437,686
- Issue date Sep 6, 2016
- Infineon Technologies Americas Corp.
- T. Warren Weeks
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Gallium nitride semiconductor structures with compositionally-grade...
- Patent number 9,064,775
- Issue date Jun 23, 2015
- International Rectifier Corporation
- T. Warren Weeks
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Gallium nitride devices with aluminum nitride intermediate layer
- Patent number 8,937,335
- Issue date Jan 20, 2015
- International Rectifier Corporation
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride devices with aluminum nitride alloy intermediate layer
- Patent number 8,928,034
- Issue date Jan 6, 2015
- International Rectifier Corporation
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride devices with gallium nitride alloy intermediate layer
- Patent number 8,928,035
- Issue date Jan 6, 2015
- International Rectifier Corporation
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride materials and methods associated with the same
- Patent number 8,748,298
- Issue date Jun 10, 2014
- International Rectifier Corporation
- Edwin L. Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride semiconductor structures with compositionally-grade...
- Patent number 8,592,862
- Issue date Nov 26, 2013
- International Rectifier Corporation
- T. Warren Weeks
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
III-nitride materials including low dislocation densities and metho...
- Patent number 8,368,117
- Issue date Feb 5, 2013
- International Rectifier Corporation
- Edwin L. Piner
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride semiconductor structures with compositionally-grade...
- Patent number 8,344,417
- Issue date Jan 1, 2013
- International Rectifier Corporation
- T. Warren Weeks, Jr.
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Gallium nitride material processing and related device structures
- Patent number 8,343,824
- Issue date Jan 1, 2013
- International Rectifier Corporation
- Edwin Lanier Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride materials and methods
- Patent number 8,105,921
- Issue date Jan 31, 2012
- International Rectifier Corporation
- T. Warren Weeks, Jr.
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Gallium nitride material devices including diamond regions and meth...
- Patent number 8,026,581
- Issue date Sep 27, 2011
- International Rectifier Corporation
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material transistors and methods associated with th...
- Patent number 7,994,540
- Issue date Aug 9, 2011
- International Rectifier Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material structures including substrates and method...
- Patent number 7,791,106
- Issue date Sep 7, 2010
- Nitronex Corporation
- Edwin L. Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride materials including low dislocation densities and metho...
- Patent number 7,687,827
- Issue date Mar 30, 2010
- Nitronex Corporation
- Edwin L. Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material transistors and methods associated with th...
- Patent number 7,569,871
- Issue date Aug 4, 2009
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material structures including substrates and method...
- Patent number 7,365,374
- Issue date Apr 29, 2008
- Nitronex Corporation
- Edwin L. Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device-based sensors
- Patent number 7,361,946
- Issue date Apr 22, 2008
- Nitronex Corporation
- Jerry W. Johnson
- G01 - MEASURING TESTING
Information Patent Grant
Gallium nitride materials and methods associated with the same
- Patent number 7,352,015
- Issue date Apr 1, 2008
- Nitronex Corporation
- Edwin Lanier Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material transistors and methods associated with th...
- Patent number 7,352,016
- Issue date Apr 1, 2008
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride materials and methods associated with the same
- Patent number 7,339,205
- Issue date Mar 4, 2008
- Nitronex Corporation
- Edwin Lanier Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride material structures including silicon substrates
- Patent number 7,247,889
- Issue date Jul 24, 2007
- Nitronex Corporation
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material transistors and methods associated with th...
- Patent number 7,135,720
- Issue date Nov 14, 2006
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride materials and methods
- Patent number 6,649,287
- Issue date Nov 18, 2003
- Nitronex Corporation
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride materials and methods
- Patent number 6,617,060
- Issue date Sep 9, 2003
- Nitronex Corporation
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material devices and methods including backside vias
- Patent number 6,611,002
- Issue date Aug 26, 2003
- Nitronex Corporation
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Material Having a Compositionally-Graded Transition L...
- Publication number 20170047407
- Publication date Feb 16, 2017
- Infineon Technologies Americas Corp.
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
III-Nitride Semiconductor Structure with Intermediate and Transitio...
- Publication number 20160126315
- Publication date May 5, 2016
- Infineon Technologies Americas Corp.
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Based Semiconductor Structure
- Publication number 20150287792
- Publication date Oct 8, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure with Compositionally-Graded Transition Layer
- Publication number 20150187880
- Publication date Jul 2, 2015
- International Rectifier Corporation
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride Devices with Discontinuously Graded Transition Layer
- Publication number 20150108495
- Publication date Apr 23, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride Semiconductor Structures With Compositionally-Grade...
- Publication number 20140353680
- Publication date Dec 4, 2014
- International Rectifier Corporation
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium Nitride Devices With Aluminum Nitride Intermediate Layer
- Publication number 20140131659
- Publication date May 15, 2014
- INTERNATIONAL RECTIFIER CORPORATION
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium Nitride Devices with Gallium Nitride Alloy Intermediate Layer
- Publication number 20140097446
- Publication date Apr 10, 2014
- INTERNATIONAL RECTIFIER CORPORATION
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium Nitride Devices with Aluminum Nitride Alloy Intermediate Layer
- Publication number 20140077222
- Publication date Mar 20, 2014
- INTERNATIONAL RECTIFIER CORPORATION
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium Nitride Devices with Compositionally-Graded Transition Layer
- Publication number 20130112990
- Publication date May 9, 2013
- International Rectifier Corporation
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium Nitride Semiconductor Structures with Compositionally-Grade...
- Publication number 20120119223
- Publication date May 17, 2012
- International Rectifier Corporation
- T. Warren Weeks, JR.
- C30 - CRYSTAL GROWTH
Information Patent Application
III-NITRIDE MATERIALS INCLUDING LOW DISLOCATION DENSITIES AND METHO...
- Publication number 20100295056
- Publication date Nov 25, 2010
- Nitronex Corporation
- Edwin L. Piner
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE MATERIAL TRANSISTORS AND METHODS ASSOCIATED WITH TH...
- Publication number 20100019850
- Publication date Jan 28, 2010
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE MATERIAL PROCESSING AND RELATED DEVICE STRUCTURES
- Publication number 20090267188
- Publication date Oct 29, 2009
- Nitronex Corporation
- Edwin L. Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE MATERIAL DEVICES INCLUDING DIAMOND REGIONS AND METH...
- Publication number 20090194773
- Publication date Aug 6, 2009
- Nitronex Corporation
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE MATERIALS AND METHODS
- Publication number 20090104758
- Publication date Apr 23, 2009
- Nitronex Corporation
- T. Warren Weeks, JR.
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE MATERIAL TRANSISTORS AND METHODS ASSOCIATED WITH TH...
- Publication number 20080246058
- Publication date Oct 9, 2008
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE MATERIALS AND METHODS ASSOCIATED WITH THE SAME
- Publication number 20080200013
- Publication date Aug 21, 2008
- Nitronex Corporation
- Edwin Lanier Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE-BASED SENSORS AND METHODS ASSOCIATED WITH THE...
- Publication number 20080185616
- Publication date Aug 7, 2008
- Nitronex Corporation
- Jerry W. Johnson
- G01 - MEASURING TESTING
Information Patent Application
GALLIUM NITRIDE MATERIALS AND METHODS ASSOCIATED WITH THE SAME
- Publication number 20080182393
- Publication date Jul 31, 2008
- Nitronex Corporation
- Edwin L. Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE MATERIAL STRUCTURES INCLUDING SUBSTRATES AND METHOD...
- Publication number 20080116456
- Publication date May 22, 2008
- Nitronex Corporation
- Edwin L. Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride material transistors and methods associated with th...
- Publication number 20070120147
- Publication date May 31, 2007
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride material structures including substrates and method...
- Publication number 20060249748
- Publication date Nov 9, 2006
- Nitronex Corporation
- Edwin L. Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-nitride material structures including silicon substrates
- Publication number 20060118819
- Publication date Jun 8, 2006
- Nitronex Corporation
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-nitride materials including low dislocation densities and metho...
- Publication number 20060006500
- Publication date Jan 12, 2006
- Nitronex Corporation
- Edwin L. Piner
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium nitride materials and methods associated with the same
- Publication number 20050285142
- Publication date Dec 29, 2005
- Nitronex Corporation
- Edwin Lanier Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device-based sensors and methods associated with the...
- Publication number 20050285155
- Publication date Dec 29, 2005
- Nitronex Corporation
- Jerry W. Johnson
- G01 - MEASURING TESTING
Information Patent Application
Gallium nitride materials and methods associated with the same
- Publication number 20050285141
- Publication date Dec 29, 2005
- Edwin Lanier Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride material transistors and methods associated with th...
- Publication number 20050167775
- Publication date Aug 4, 2005
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride material structures including isolation regions and...
- Publication number 20050145851
- Publication date Jul 7, 2005
- Nitronex Corporation
- Jerry W. Johnson
- H01 - BASIC ELECTRIC ELEMENTS

Edwin L. Piner

Person

Patents Grantslast 30 patents

Semiconductor material having a compositionally-graded transition l...

Gallium nitride materials and methods associated with the same

Semiconductor structure with compositionally-graded transition layer

III-nitride based semiconductor structure

Gallium nitride devices with discontinuously graded transition layer

Gallium nitride semiconductor structures with compositionally-grade...

Gallium nitride devices with aluminum nitride intermediate layer

Gallium nitride devices with aluminum nitride alloy intermediate layer

Gallium nitride devices with gallium nitride alloy intermediate layer

Gallium nitride materials and methods associated with the same

Gallium nitride semiconductor structures with compositionally-grade...

III-nitride materials including low dislocation densities and metho...

Gallium nitride semiconductor structures with compositionally-grade...

Gallium nitride material processing and related device structures

Gallium nitride materials and methods

Gallium nitride material devices including diamond regions and meth...

Gallium nitride material transistors and methods associated with th...

Gallium nitride material structures including substrates and method...

III-nitride materials including low dislocation densities and metho...

Gallium nitride material transistors and methods associated with th...

Gallium nitride material structures including substrates and method...

Semiconductor device-based sensors

Gallium nitride materials and methods associated with the same

Gallium nitride material transistors and methods associated with th...

Gallium nitride materials and methods associated with the same

III-nitride material structures including silicon substrates

Gallium nitride material transistors and methods associated with th...

Gallium nitride materials and methods

Gallium nitride materials and methods

Gallium nitride material devices and methods including backside vias

Patents Applicationslast 30 patents

Semiconductor Material Having a Compositionally-Graded Transition L...

III-Nitride Semiconductor Structure with Intermediate and Transitio...

III-Nitride Based Semiconductor Structure

Semiconductor Structure with Compositionally-Graded Transition Layer

Gallium Nitride Devices with Discontinuously Graded Transition Layer

Gallium Nitride Semiconductor Structures With Compositionally-Grade...

Gallium Nitride Devices With Aluminum Nitride Intermediate Layer

Gallium Nitride Devices with Gallium Nitride Alloy Intermediate Layer

Gallium Nitride Devices with Aluminum Nitride Alloy Intermediate Layer

Gallium Nitride Devices with Compositionally-Graded Transition Layer

Gallium Nitride Semiconductor Structures with Compositionally-Grade...

III-NITRIDE MATERIALS INCLUDING LOW DISLOCATION DENSITIES AND METHO...

GALLIUM NITRIDE MATERIAL TRANSISTORS AND METHODS ASSOCIATED WITH TH...

GALLIUM NITRIDE MATERIAL PROCESSING AND RELATED DEVICE STRUCTURES

GALLIUM NITRIDE MATERIAL DEVICES INCLUDING DIAMOND REGIONS AND METH...

GALLIUM NITRIDE MATERIALS AND METHODS

GALLIUM NITRIDE MATERIAL TRANSISTORS AND METHODS ASSOCIATED WITH TH...

GALLIUM NITRIDE MATERIALS AND METHODS ASSOCIATED WITH THE SAME

SEMICONDUCTOR DEVICE-BASED SENSORS AND METHODS ASSOCIATED WITH THE...

GALLIUM NITRIDE MATERIALS AND METHODS ASSOCIATED WITH THE SAME

GALLIUM NITRIDE MATERIAL STRUCTURES INCLUDING SUBSTRATES AND METHOD...

Gallium nitride material transistors and methods associated with th...

Gallium nitride material structures including substrates and method...

III-nitride material structures including silicon substrates

III-nitride materials including low dislocation densities and metho...

Gallium nitride materials and methods associated with the same

Semiconductor device-based sensors and methods associated with the...

Gallium nitride materials and methods associated with the same

Gallium nitride material transistors and methods associated with th...

Gallium nitride material structures including isolation regions and...