Eiji Kamiyama

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Noda, KR

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Patents Grantslast 30 patents

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SOI structure having a SiGe layer interposed between the silicon an...
- Patent number 7,741,193
- Issue date Jun 22, 2010
- Sumitomo Mitsubishi Silicon Corp.
- Jeagun Park
- H01 - BASIC ELECTRIC ELEMENTS