Eiji Toyoda

Person

Niigata, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon wafer and method for heat-treating silicon wafer
- Patent number 8,999,864
- Issue date Apr 7, 2015
- Global Wafers Japan Co., Ltd.
- Takeshi Senda
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing single crystal silicon wafer from ingot gro...
- Patent number 8,476,149
- Issue date Jul 2, 2013
- Global Wafers Japan Co., Ltd.
- Hiromichi Isogai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for heat treating a silicon wafer
- Patent number 8,399,341
- Issue date Mar 19, 2013
- Covalent Materials Corporation
- Takeshi Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of heat treating silicon wafer
- Patent number 8,252,700
- Issue date Aug 28, 2012
- Covalent Materials Corporation
- Takeshi Senda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method for silicon wafer
- Patent number 7,977,219
- Issue date Jul 12, 2011
- Covalent Materials Corporation
- Hiromichi Isogai
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR HEAT TREATING A SILICON WAFER
- Publication number 20120184091
- Publication date Jul 19, 2012
- Covalent Materials Corporation
- Takeshi Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON WAFER AND METHOD FOR HEAT-TREATING SILICON WAFER
- Publication number 20120139088
- Publication date Jun 7, 2012
- Covalent Materials Corporation
- Takeshi Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of heat treating silicon wafer
- Publication number 20100197146
- Publication date Aug 5, 2010
- COVALENT MATERIALS CORPORATION
- Takeshi Senda
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD FOR SILICON WAFER
- Publication number 20100055884
- Publication date Mar 4, 2010
- COVALENT MATERIALS CORPORATION
- Hiromichi Isogai
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR HEA...
- Publication number 20100038757
- Publication date Feb 18, 2010
- COVALENT MATERIALS CORPORATION
- Hiromichi Isogai
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE
- Publication number 20090004825
- Publication date Jan 1, 2009
- Covalent Materials Corporation
- Takeshi Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF
- Publication number 20080164572
- Publication date Jul 10, 2008
- Covalent Materials Corporation
- Eiji Toyoda
- H01 - BASIC ELECTRIC ELEMENTS

Eiji Toyoda

Person

Patents Grantslast 30 patents

Silicon wafer and method for heat-treating silicon wafer

Method of manufacturing single crystal silicon wafer from ingot gro...

Method for heat treating a silicon wafer

Method of heat treating silicon wafer

Manufacturing method for silicon wafer

Patents Applicationslast 30 patents

METHOD FOR HEAT TREATING A SILICON WAFER

SILICON WAFER AND METHOD FOR HEAT-TREATING SILICON WAFER

Method of heat treating silicon wafer

MANUFACTURING METHOD FOR SILICON WAFER

SILICON WAFER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR HEA...

METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE

SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF