Eizo Fukami

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistive effect sensor with barrier layer smoothed by compo...
- Patent number 6,903,908
- Issue date Jun 7, 2005
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element having a ferromagnetic tunnel junct...
- Patent number 6,798,626
- Issue date Sep 28, 2004
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive head production method
- Patent number 6,718,621
- Issue date Apr 13, 2004
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic head with a tunnel junction including metallic material sa...
- Patent number 6,624,987
- Issue date Sep 23, 2003
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
MAGNETORESISTIVE HEAD HAVING FERROMAGNETIC TUNNEL JUNCTION FILM WIT...
- Patent number 6,538,861
- Issue date Mar 25, 2003
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance element, with lower electrode anti-erosion/flakin...
- Patent number 6,493,195
- Issue date Dec 10, 2002
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
magnetoresistance apparatus having reduced overlapping of permanent...
- Publication number 20040134877
- Publication date Jul 15, 2004
- TDK Corporation
- Nobuyuki Ishiwata
- G01 - MEASURING TESTING
Information Patent Application
Magnetoresistive effect element, magneto-resistive effect head, met...
- Publication number 20030151859
- Publication date Aug 14, 2003
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive effect sensor, method for manufacturing a magnetor...
- Publication number 20020008016
- Publication date Jan 24, 2002
- Kazuhiko Hayashi
- B82 - NANO-TECHNOLOGY