Eldon J. Zorinsky

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming a recessed contact bipolar transistor
- Patent number 5,316,957
- Issue date May 31, 1994
- Texas Instruments Incorporated
- David B. Spratt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a recessed contact bipolar transistor and field e...
- Patent number 5,075,241
- Issue date Dec 24, 1991
- Texas Instruments Incorporated
- David B. Spratt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a horizontal self-aligned transistor
- Patent number 5,019,525
- Issue date May 28, 1991
- Texas Instruments Incorporated
- Robert L. Virkus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a recessed contact bipolar transistor and field...
- Patent number 4,985,744
- Issue date Jan 15, 1991
- Texas Instruments Incorporated
- David B. Spratt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anodizable strain layer for SOI semiconductor structures
- Patent number 4,982,263
- Issue date Jan 1, 1991
- Texas Instruments Incorporated
- David B. Spratt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed contact bipolar transistor and method
- Patent number 4,897,703
- Issue date Jan 30, 1990
- Texas Instruments Incorporated
- David B. Spratt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal structure thin film transistor
- Patent number 4,897,698
- Issue date Jan 30, 1990
- Texas Instruments Incorporated
- Eldon J. Zorinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anadization system with remote voltage sensing and active feedback...
- Patent number 4,891,103
- Issue date Jan 2, 1990
- Texas Instruments Incorporated
- Eldon J. Zorinsky
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Anodizable strain layer for SOI semiconductor structures
- Patent number 4,849,370
- Issue date Jul 18, 1989
- Texas Instruments Incorporated
- David B. Spratt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric isolation using isolated silicon by limited anodization...
- Patent number 4,810,667
- Issue date Mar 7, 1989
- Texas Instruments Incorporated
- Eldon J. Zorinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for obtaining full oxide isolation of epitaxial islands in s...
- Patent number 4,628,591
- Issue date Dec 16, 1986
- Texas Instruments Incorporated
- Eldon J. Zorinsky
- H01 - BASIC ELECTRIC ELEMENTS

Eldon J. Zorinsky

Person

Patents Grantslast 30 patents

Method of forming a recessed contact bipolar transistor

Method of forming a recessed contact bipolar transistor and field e...

Method for forming a horizontal self-aligned transistor

Method for forming a recessed contact bipolar transistor and field...

Anodizable strain layer for SOI semiconductor structures

Recessed contact bipolar transistor and method

Horizontal structure thin film transistor

Anadization system with remote voltage sensing and active feedback...

Anodizable strain layer for SOI semiconductor structures

Dielectric isolation using isolated silicon by limited anodization...

Method for obtaining full oxide isolation of epitaxial islands in s...