Elijah Ilya Karpov

Person

Santa Clara, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Metallization stacks with self-aligned staggered metal lines
- Patent number 12,261,114
- Issue date Mar 25, 2025
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic memory stack
- Patent number 12,058,847
- Issue date Aug 6, 2024
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Subtractively patterned interconnect structures for integrated circ...
- Patent number 12,027,458
- Issue date Jul 2, 2024
- Intel Corporation
- Kevin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of stackable embedded eDRAM using a binary alloy based...
- Patent number 11,985,909
- Issue date May 14, 2024
- Intel Corporation
- Elijah Karpov
- G11 - INFORMATION STORAGE
Information Patent Grant
Double-gated ferroelectric field-effect transistor
- Patent number 11,895,846
- Issue date Feb 6, 2024
- Intel Corporation
- Abhishek A. Sharma
- G11 - INFORMATION STORAGE
Information Patent Grant
Thin film tunnel field effect transistors having relatively increas...
- Patent number 11,735,595
- Issue date Aug 22, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film-transistor based complementary metal-oxide-semiconductor...
- Patent number 11,659,722
- Issue date May 23, 2023
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional oscillator structure
- Patent number 11,651,203
- Issue date May 16, 2023
- Intel Corporation
- Dmitri E. Nikonov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Ferroelectric field effect transistors (FeFETs) having band-enginee...
- Patent number 11,640,995
- Issue date May 2, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
1S-1T ferroelectric memory
- Patent number 11,640,839
- Issue date May 2, 2023
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double selector element for low voltage bipolar memory devices
- Patent number 11,605,671
- Issue date Mar 14, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selector element with ballast for low voltage bipolar memory devices
- Patent number 11,522,011
- Issue date Dec 6, 2022
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric gate oxide based tunnel feFET memory
- Patent number 11,488,978
- Issue date Nov 1, 2022
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Retention improvement by high-k encapsulation of RRAM devices
- Patent number 11,462,684
- Issue date Oct 4, 2022
- Intel Corporation
- Albert Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Subtractively patterned interconnect structures for integrated circ...
- Patent number 11,444,024
- Issue date Sep 13, 2022
- Intel Corporation
- Kevin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal filament memory cells
- Patent number 11,430,949
- Issue date Aug 30, 2022
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM memory cell and process to increase RRAM material area in an R...
- Patent number 11,417,705
- Issue date Aug 16, 2022
- Intel Corporation
- Brian Doyle
- G11 - INFORMATION STORAGE
Information Patent Grant
Selector devices with integrated barrier materials
- Patent number 11,404,639
- Issue date Aug 2, 2022
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film based 1T-1R cell with resistive random access memory belo...
- Patent number 11,393,526
- Issue date Jul 19, 2022
- Intel Corporation
- Ravi Pillarisetty
- G11 - INFORMATION STORAGE
Information Patent Grant
Independently scaling selector and memory in memory cell
- Patent number 11,393,874
- Issue date Jul 19, 2022
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selector devices
- Patent number 11,374,056
- Issue date Jun 28, 2022
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Word line with air-gap for non-volatile memories
- Patent number 11,362,140
- Issue date Jun 14, 2022
- Intel Corporation
- Prashant Majhi
- G11 - INFORMATION STORAGE
Information Patent Grant
Strained thin film transistors
- Patent number 11,342,457
- Issue date May 24, 2022
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film tunnel field effect transistors having relatively increas...
- Patent number 11,335,705
- Issue date May 17, 2022
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-gated ferroelectric field-effect transistor
- Patent number 11,289,509
- Issue date Mar 29, 2022
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
1S-1T ferroelectric memory
- Patent number 11,250,899
- Issue date Feb 15, 2022
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional oscillator structure
- Patent number 11,250,317
- Issue date Feb 15, 2022
- Intel Corporation
- Dmitri E. Nikonov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Planar slab vias for integrated circuit interconnects
- Patent number 11,239,156
- Issue date Feb 1, 2022
- Intel Corporation
- Elijah Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of high density cross-point memory and CMOS logic for h...
- Patent number 11,233,040
- Issue date Jan 25, 2022
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double selector element for low voltage bipolar memory devices
- Patent number 11,233,090
- Issue date Jan 25, 2022
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THIN HAFNIUM-ZIRCONIUM OXIDE FILMS HAVING LARGE GRAIN SIZE FOR FERR...
- Publication number 20250006433
- Publication date Jan 2, 2025
- Intel Corporation
- Sarah Atanasov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBTRACTIVELY PATTERNED INTERCONNECT STRUCTURES FOR INTEGRATED CIRC...
- Publication number 20240304543
- Publication date Sep 12, 2024
- Intel Corporation
- Kevin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INTERCONNECT LEVEL COMPRISING MULTI-HEIGHT LINES...
- Publication number 20240170394
- Publication date May 23, 2024
- Intel Corporation
- Elijah Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF RECONFIGURABLE ARCHITECTURES USING FERROELECTRICS
- Publication number 20240113123
- Publication date Apr 4, 2024
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED STAGGERED INTEGRATED CIRCUIT INTERCONNECT FEATURES
- Publication number 20230395506
- Publication date Dec 7, 2023
- Intel Corporation
- Miriam Reshotko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPOSITION TOOL AND METHOD FOR FILLING DEEP TRENCHES
- Publication number 20230360970
- Publication date Nov 9, 2023
- Intel Corporation
- Elijah V. KARPOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH FERROELECTRIC GATES
- Publication number 20230223475
- Publication date Jul 13, 2023
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAGGERED VERTICALLY SPACED INTEGRATED CIRCUIT LINE METALLIZATION W...
- Publication number 20230197602
- Publication date Jun 22, 2023
- Intel Corporation
- Elijah Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL (MIM) CAPACITORS WITH PYROCHLORE-BASED INSULA...
- Publication number 20230197643
- Publication date Jun 22, 2023
- Intel Corporation
- Elijah Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES WITH NITRIDE-BASED FERROELECTRIC MATERIALS
- Publication number 20230116719
- Publication date Apr 13, 2023
- Intel Corporation
- Elijah V. KARPOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES WITH CONDUCTIVE TRENCH CONTACT...
- Publication number 20230095402
- Publication date Mar 30, 2023
- Intel Corporation
- Manish CHANDHOK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES WITH CONDUCTIVE TRENCH CONTACT...
- Publication number 20230101212
- Publication date Mar 30, 2023
- Intel Corporation
- Manish CHANDHOK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED CAPACITOR ARCHITECTURE FOR FERROELECTRIC MEMORY DEVICES
- Publication number 20230099724
- Publication date Mar 30, 2023
- Intel Corporation
- Elijah V. KARPOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBTRACTIVELY PATTERNED INTERCONNECT STRUCTURES FOR INTEGRATED CIR...
- Publication number 20220352068
- Publication date Nov 3, 2022
- Intel Corporation
- Kevin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTOR DEVICES
- Publication number 20220262860
- Publication date Aug 18, 2022
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TUNNEL FIELD EFFECT TRANSISTORS HAVING RELATIVELY INCREAS...
- Publication number 20220246646
- Publication date Aug 4, 2022
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR SLAB VIAS FOR INTEGRATED CIRCUIT INTERCONNECTS
- Publication number 20220223518
- Publication date Jul 14, 2022
- Intel Corporation
- Elijah Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL METHOD TO FORM SINGLE CRYSTAL MOSFET AND FEFET
- Publication number 20220199801
- Publication date Jun 23, 2022
- Intel Corporation
- Prashant MAJHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL ESD PROTECTION DECOUPLED FROM DIFFUSION
- Publication number 20220199609
- Publication date Jun 23, 2022
- Intel Corporation
- Urusa ALAAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-GATED FERROELECTRIC FIELD-EFFECT TRANSISTOR
- Publication number 20220181335
- Publication date Jun 9, 2022
- Intel Corporation
- Abhishek A. SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBTRACTIVELY PATTERNED INTERCONNECT STRUCTURES FOR INTEGRATED CIR...
- Publication number 20220139823
- Publication date May 5, 2022
- Intel Corporation
- Kevin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
1S-1T FERROELECTRIC MEMORY
- Publication number 20220130443
- Publication date Apr 28, 2022
- Intel Corporation
- Abhishek A. SHARMA
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL OSCILLATOR STRUCTURE
- Publication number 20220114432
- Publication date Apr 14, 2022
- Intel Corporation
- Dmitri E. Nikonov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DOUBLE SELECTOR ELEMENT FOR LOW VOLTAGE BIPOLAR MEMORY DEVICES
- Publication number 20220109025
- Publication date Apr 7, 2022
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METALLIZATION STACKS WITH SELF-ALIGNED STAGGERED METAL LINES
- Publication number 20220084942
- Publication date Mar 17, 2022
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES INCLUDING A METAL LAYER FORMED USING...
- Publication number 20220042162
- Publication date Feb 10, 2022
- Intel Corporation
- Elijah V. KARPOV
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MONOLITHIC MEMORY STACK
- Publication number 20210375873
- Publication date Dec 2, 2021
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS ARRAY FERROELECTRIC TUNNEL JUNCTION DEVICES FOR ARTIFICIAL IN...
- Publication number 20210342679
- Publication date Nov 4, 2021
- Intel Corporation
- Elijah V. Karpov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PLANAR SLAB VIAS FOR INTEGRATED CIRCUIT INTERCONNECTS
- Publication number 20210296231
- Publication date Sep 23, 2021
- Intel Corporation
- Elijah Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MACRO STORAGE CELL COMPOSED OF MULTIPLE STORAGE DEVICES EACH CAPABL...
- Publication number 20200411088
- Publication date Dec 31, 2020
- Intel Corporation
- Ian A. YOUNG
- G11 - INFORMATION STORAGE

Elijah Ilya Karpov

Person

Patents Grantslast 30 patents

Metallization stacks with self-aligned staggered metal lines

Monolithic memory stack

Subtractively patterned interconnect structures for integrated circ...

Fabrication of stackable embedded eDRAM using a binary alloy based...

Double-gated ferroelectric field-effect transistor

Thin film tunnel field effect transistors having relatively increas...

Thin-film-transistor based complementary metal-oxide-semiconductor...

Three-dimensional oscillator structure

Ferroelectric field effect transistors (FeFETs) having band-enginee...

1S-1T ferroelectric memory

Double selector element for low voltage bipolar memory devices

Selector element with ballast for low voltage bipolar memory devices

Ferroelectric gate oxide based tunnel feFET memory

Retention improvement by high-k encapsulation of RRAM devices

Subtractively patterned interconnect structures for integrated circ...

Metal filament memory cells

RRAM memory cell and process to increase RRAM material area in an R...

Selector devices with integrated barrier materials

Thin film based 1T-1R cell with resistive random access memory belo...

Independently scaling selector and memory in memory cell

Selector devices

Word line with air-gap for non-volatile memories

Strained thin film transistors

Thin film tunnel field effect transistors having relatively increas...

Double-gated ferroelectric field-effect transistor

1S-1T ferroelectric memory

Three-dimensional oscillator structure

Planar slab vias for integrated circuit interconnects

Integration of high density cross-point memory and CMOS logic for h...

Double selector element for low voltage bipolar memory devices

Patents Applicationslast 30 patents

THIN HAFNIUM-ZIRCONIUM OXIDE FILMS HAVING LARGE GRAIN SIZE FOR FERR...

SUBTRACTIVELY PATTERNED INTERCONNECT STRUCTURES FOR INTEGRATED CIRC...

INTEGRATED CIRCUIT INTERCONNECT LEVEL COMPRISING MULTI-HEIGHT LINES...

FABRICATION OF RECONFIGURABLE ARCHITECTURES USING FERROELECTRICS

SELF-ALIGNED STAGGERED INTEGRATED CIRCUIT INTERCONNECT FEATURES

DEPOSITION TOOL AND METHOD FOR FILLING DEEP TRENCHES

TRANSISTORS WITH FERROELECTRIC GATES

STAGGERED VERTICALLY SPACED INTEGRATED CIRCUIT LINE METALLIZATION W...

METAL INSULATOR METAL (MIM) CAPACITORS WITH PYROCHLORE-BASED INSULA...

MEMORY DEVICES WITH NITRIDE-BASED FERROELECTRIC MATERIALS

CONTACT OVER ACTIVE GATE STRUCTURES WITH CONDUCTIVE TRENCH CONTACT...

CONTACT OVER ACTIVE GATE STRUCTURES WITH CONDUCTIVE TRENCH CONTACT...

ENHANCED CAPACITOR ARCHITECTURE FOR FERROELECTRIC MEMORY DEVICES

SUBTRACTIVELY PATTERNED INTERCONNECT STRUCTURES FOR INTEGRATED CIR...

SELECTOR DEVICES

THIN FILM TUNNEL FIELD EFFECT TRANSISTORS HAVING RELATIVELY INCREAS...

PLANAR SLAB VIAS FOR INTEGRATED CIRCUIT INTERCONNECTS

NOVEL METHOD TO FORM SINGLE CRYSTAL MOSFET AND FEFET

NOVEL ESD PROTECTION DECOUPLED FROM DIFFUSION

DOUBLE-GATED FERROELECTRIC FIELD-EFFECT TRANSISTOR

SUBTRACTIVELY PATTERNED INTERCONNECT STRUCTURES FOR INTEGRATED CIR...

1S-1T FERROELECTRIC MEMORY

THREE-DIMENSIONAL OSCILLATOR STRUCTURE

DOUBLE SELECTOR ELEMENT FOR LOW VOLTAGE BIPOLAR MEMORY DEVICES

METALLIZATION STACKS WITH SELF-ALIGNED STAGGERED METAL LINES

INTEGRATED CIRCUIT STRUCTURES INCLUDING A METAL LAYER FORMED USING...

MONOLITHIC MEMORY STACK

CROSS ARRAY FERROELECTRIC TUNNEL JUNCTION DEVICES FOR ARTIFICIAL IN...

PLANAR SLAB VIAS FOR INTEGRATED CIRCUIT INTERCONNECTS

MACRO STORAGE CELL COMPOSED OF MULTIPLE STORAGE DEVICES EACH CAPABL...