Elison de Nazareth Matioli

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Cambridge, MA, US

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Patents Grantslast 30 patents

Information Patent Grant
Reducing leakage current in semiconductor devices
- Patent number 9,911,813
- Issue date Mar 6, 2018
- Massachusetts Institute of Technology
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode having trenches in a semiconductor region
- Patent number 9,293,538
- Issue date Mar 22, 2016
- Massachusetts Institute of Technology
- Tomas Apostol Palacios
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having a recessed electrode structure
- Patent number 9,041,003
- Issue date May 26, 2015
- Massachusetts Institute of Technology
- Tomas Apostol Palacios
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICES HAVING A RECESSED ELECTRODE STRUCTURE
- Publication number 20140070228
- Publication date Mar 13, 2014
- Massachusetts Institute of Technology
- Tomas Apostol Palacios
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING A RECESSED ELECTRODE STRUCTURE
- Publication number 20130099247
- Publication date Apr 25, 2013
- Massachusetts Institute of Technology
- Tomas Apostol Palacios
- H01 - BASIC ELECTRIC ELEMENTS