Ellen Lan

Person

Chandler, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
pHEMT with barrier optimized for low temperature operation
- Patent number 7,253,455
- Issue date Aug 7, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field plate transistor with reduced field plate resistance
- Patent number 7,253,486
- Issue date Aug 7, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed semiconductor device
- Patent number 7,229,903
- Issue date Jun 12, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Hsin-Hua P. Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor component that includes sel...
- Patent number 6,939,781
- Issue date Sep 6, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Randy D. Redd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a microwave field effect transistor with high op...
- Patent number 6,867,078
- Issue date Mar 15, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode structure for transistors, non-volatile memories and the...
- Patent number 6,262,451
- Issue date Jul 17, 2001
- Motorola, Inc.
- Jenn-Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating vertical FET with sidewall gate electrode
- Patent number 6,156,611
- Issue date Dec 5, 2000
- Motorola, Inc.
- Ellen Lan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
pHEMT with barrier optimized for low temperature operation
- Publication number 20060220062
- Publication date Oct 5, 2006
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Recessed semiconductor device
- Publication number 20060043416
- Publication date Mar 2, 2006
- Hsin-Hua P. Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
InGaP pHEMT device for power amplifier operation over wide temperat...
- Publication number 20050104087
- Publication date May 19, 2005
- Ellen Y. Lan
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor component and method of manufacturing same
- Publication number 20040262629
- Publication date Dec 30, 2004
- MOTOROLA, INC.
- Randy D. Redd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field plate transistor with reduced field plate resistance
- Publication number 20040021182
- Publication date Feb 5, 2004
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

pHEMT with barrier optimized for low temperature operation

Field plate transistor with reduced field plate resistance

Recessed semiconductor device

Method of manufacturing a semiconductor component that includes sel...

Method for forming a microwave field effect transistor with high op...

Electrode structure for transistors, non-volatile memories and the...

Method of fabricating vertical FET with sidewall gate electrode

Patents Applicationslast 30 patents

pHEMT with barrier optimized for low temperature operation

Recessed semiconductor device

InGaP pHEMT device for power amplifier operation over wide temperat...

Semiconductor component and method of manufacturing same

Field plate transistor with reduced field plate resistance