Elliot John Smith

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with interconnect to source/drain
- Patent number 10,923,579
- Issue date Feb 16, 2021
- GLOBALFOUNDRIES U.S. INC.
- Hans-Juergen Thees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage transistor device with thick gate insulation layers
- Patent number 10,811,433
- Issue date Oct 20, 2020
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with interconnect to source/drain
- Patent number 10,707,330
- Issue date Jul 7, 2020
- GLOBALFOUNDRIES Inc.
- Hans-Juergen Thees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including Si/Ge active regions with different...
- Patent number 10,522,555
- Issue date Dec 31, 2019
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Front-end-of-line device structure and method of forming such a fro...
- Patent number 10,483,154
- Issue date Nov 19, 2019
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage transistor device with thick gate insulation layers
- Patent number 10,418,380
- Issue date Sep 17, 2019
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including self-aligned active regions for pla...
- Patent number 10,396,084
- Issue date Aug 27, 2019
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure with dual width electrode layer
- Patent number 10,340,359
- Issue date Jul 2, 2019
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor using buried insulating layer as gate diele...
- Patent number 10,319,827
- Issue date Jun 11, 2019
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Early gate silicidation in transistor elements
- Patent number 10,304,683
- Issue date May 28, 2019
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique and related semiconductor devices based on crystalline se...
- Patent number 10,283,365
- Issue date May 7, 2019
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Technique for defining active regions of semiconductor devices with...
- Patent number 10,199,259
- Issue date Feb 5, 2019
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
SOI-based floating gate memory cell
- Patent number 10,177,163
- Issue date Jan 8, 2019
- GLOBALFOUNDRIES Inc.
- Nigel Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming integrated circuits that include a dummy gate s...
- Patent number 10,157,996
- Issue date Dec 18, 2018
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including a trench capping layer
- Patent number 10,103,224
- Issue date Oct 16, 2018
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device structure and semiconducto...
- Patent number 9,953,876
- Issue date Apr 24, 2018
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate patterning for AC and DC performance boost
- Patent number 9,923,076
- Issue date Mar 20, 2018
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including a first transistor at a semicondu...
- Patent number 9,847,347
- Issue date Dec 19, 2017
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including a dummy gate structure and method for...
- Patent number 9,793,372
- Issue date Oct 17, 2017
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inline monitoring of transistor-to-transistor critical dimension
- Patent number 9,768,084
- Issue date Sep 19, 2017
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor structure and method of forming a capacitor structure
- Patent number 9,698,179
- Issue date Jul 4, 2017
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process monitoring for gate cut mask
- Patent number 9,685,336
- Issue date Jun 20, 2017
- GLOBALFOUNDRIES Inc.
- Nigel Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including a trench capping layer and method...
- Patent number 9,633,857
- Issue date Apr 25, 2017
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BULEX contacts in advanced FDSOI techniques
- Patent number 9,608,112
- Issue date Mar 28, 2017
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer with SOI structure having a buried insulating multilayer stru...
- Patent number 9,590,118
- Issue date Mar 7, 2017
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a gate mask for fabricating a structure of gate l...
- Patent number 9,514,942
- Issue date Dec 6, 2016
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH INTERCONNECT TO SOURCE/DRAIN
- Publication number 20200251576
- Publication date Aug 6, 2020
- GLOBALFOUNDRIES INC.
- Hans-Juergen Thees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE TRANSISTOR DEVICE WITH THICK GATE INSULATION LAYERS
- Publication number 20190319048
- Publication date Oct 17, 2019
- GLOBALFOUNDRIES INC.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING SI/GE ACTIVE REGIONS WITH DIFFERENT...
- Publication number 20190312041
- Publication date Oct 10, 2019
- GLOBALFOUNDRIES INC.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING SILICON/GERMANIUM A...
- Publication number 20190312042
- Publication date Oct 10, 2019
- GLOBALFOUNDRIES INC.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING FDSOI TRANSISTORS WITH COMPACT GROUN...
- Publication number 20190312038
- Publication date Oct 10, 2019
- GLOBALFOUNDRIES INC.
- Nigel Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INTERCONNECT TO SOURCE/DRAIN
- Publication number 20190252522
- Publication date Aug 15, 2019
- GLOBALFOUNDRIES INC.
- Hans-Juergen Thees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE AND RELATED SEMICONDUCTOR DEVICES BASED ON CRYSTALLINE SE...
- Publication number 20190148149
- Publication date May 16, 2019
- GLOBALFOUNDRIES INC.
- Elliot John Smith
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
EARLY GATE SILICIDATION IN TRANSISTOR ELEMENTS
- Publication number 20190131133
- Publication date May 2, 2019
- GLOBALFOUNDRIES INC.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR DEFINING ACTIVE REGIONS OF SEMICONDUCTOR DEVICES WITH...
- Publication number 20190043752
- Publication date Feb 7, 2019
- GLOBALFOUNDRIES INC.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE TRANSISTOR DEVICE WITH THICK GATE INSULATION LAYERS
- Publication number 20190035815
- Publication date Jan 31, 2019
- GLOBALFOUNDRIES INC.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE TRANSISTOR USING BURIED INSULATING LAYER AS GATE DIELE...
- Publication number 20190019876
- Publication date Jan 17, 2019
- GLOBALFOUNDRIES INC.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE WITH DUAL WIDTH ELECTRODE LAYER
- Publication number 20180175155
- Publication date Jun 21, 2018
- GLOBALFOUNDRIES INC.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE AND SEMICONDUCTO...
- Publication number 20180096894
- Publication date Apr 5, 2018
- GLOBALFOUNDRIES INC.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20180053829
- Publication date Feb 22, 2018
- GLOBALFOUNDRIES INC.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE PATTERNING FOR AC AND DC PERFORMANCE BOOST
- Publication number 20170365680
- Publication date Dec 21, 2017
- GLOBALFOUNDRIES INC.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING INTEGRATED CIRCUITS THAT INCLUDE A DUMMY GATE S...
- Publication number 20170345914
- Publication date Nov 30, 2017
- GLOBALFOUNDRIES INC.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING A TRENCH CAPPING LAYER
- Publication number 20170288015
- Publication date Oct 5, 2017
- GLOBALFOUNDRIES INC.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INLINE MONITORING OF TRANSISTOR-TO-TRANSISTOR CRITICAL DIMENSION
- Publication number 20170271220
- Publication date Sep 21, 2017
- GLOBALFOUNDRIES INC.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER WITH SOI STRUCTURE HAVING A BURIED INSULATING MULTILAYER STRU...
- Publication number 20170077314
- Publication date Mar 16, 2017
- GLOBALFOUNDRIES INC.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR STRUCTURE AND METHOD OF FORMING A CAPACITOR STRUCTURE
- Publication number 20170040354
- Publication date Feb 9, 2017
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULEX CONTACTS IN ADVANCED FDSOI TECHNIQUES
- Publication number 20170040450
- Publication date Feb 9, 2017
- GLOBALFOUNDRIES INC.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER-LESS AUTO CLEAN OF PROCESSING CHAMBER
- Publication number 20150050812
- Publication date Feb 19, 2015
- GLOBALFOUNDRIES INC.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS

Elliot John Smith

Person

Patents Grantslast 30 patents

Semiconductor device with interconnect to source/drain

High-voltage transistor device with thick gate insulation layers

Semiconductor device with interconnect to source/drain

Semiconductor devices including Si/Ge active regions with different...

Front-end-of-line device structure and method of forming such a fro...

High-voltage transistor device with thick gate insulation layers

Semiconductor devices including self-aligned active regions for pla...

Gate structure with dual width electrode layer

High voltage transistor using buried insulating layer as gate diele...

Early gate silicidation in transistor elements

Technique and related semiconductor devices based on crystalline se...

Technique for defining active regions of semiconductor devices with...

SOI-based floating gate memory cell

Methods for forming integrated circuits that include a dummy gate s...

Semiconductor structure including a trench capping layer

Method of forming a semiconductor device structure and semiconducto...

Gate patterning for AC and DC performance boost

Semiconductor structure including a first transistor at a semicondu...

Integrated circuit including a dummy gate structure and method for...

Inline monitoring of transistor-to-transistor critical dimension

Capacitor structure and method of forming a capacitor structure

Process monitoring for gate cut mask

Semiconductor structure including a trench capping layer and method...

BULEX contacts in advanced FDSOI techniques

Wafer with SOI structure having a buried insulating multilayer stru...

Method of forming a gate mask for fabricating a structure of gate l...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH INTERCONNECT TO SOURCE/DRAIN

HIGH-VOLTAGE TRANSISTOR DEVICE WITH THICK GATE INSULATION LAYERS

SEMICONDUCTOR DEVICES INCLUDING SI/GE ACTIVE REGIONS WITH DIFFERENT...

METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING SILICON/GERMANIUM A...

SEMICONDUCTOR DEVICE INCLUDING FDSOI TRANSISTORS WITH COMPACT GROUN...

SEMICONDUCTOR DEVICE WITH INTERCONNECT TO SOURCE/DRAIN

TECHNIQUE AND RELATED SEMICONDUCTOR DEVICES BASED ON CRYSTALLINE SE...

EARLY GATE SILICIDATION IN TRANSISTOR ELEMENTS

TECHNIQUE FOR DEFINING ACTIVE REGIONS OF SEMICONDUCTOR DEVICES WITH...

HIGH-VOLTAGE TRANSISTOR DEVICE WITH THICK GATE INSULATION LAYERS

HIGH VOLTAGE TRANSISTOR USING BURIED INSULATING LAYER AS GATE DIELE...

GATE STRUCTURE WITH DUAL WIDTH ELECTRODE LAYER

METHOD OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE AND SEMICONDUCTO...

METHOD OF FORMING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

GATE PATTERNING FOR AC AND DC PERFORMANCE BOOST

METHODS FOR FORMING INTEGRATED CIRCUITS THAT INCLUDE A DUMMY GATE S...

SEMICONDUCTOR STRUCTURE INCLUDING A TRENCH CAPPING LAYER

INLINE MONITORING OF TRANSISTOR-TO-TRANSISTOR CRITICAL DIMENSION

WAFER WITH SOI STRUCTURE HAVING A BURIED INSULATING MULTILAYER STRU...

CAPACITOR STRUCTURE AND METHOD OF FORMING A CAPACITOR STRUCTURE

BULEX CONTACTS IN ADVANCED FDSOI TECHNIQUES

WAFER-LESS AUTO CLEAN OF PROCESSING CHAMBER