Elmar Falck

Person

Hohenbrunn, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor component with edge termination region
- Patent number 11,848,377
- Issue date Dec 19, 2023
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component with edge termination region
- Patent number 11,018,249
- Issue date May 25, 2021
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor component having a channel sto...
- Patent number 10,943,974
- Issue date Mar 9, 2021
- Infineon Technologies AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having an undulated...
- Patent number 10,497,801
- Issue date Dec 3, 2019
- Infineon Technologies AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device termination structure
- Patent number 10,388,722
- Issue date Aug 20, 2019
- Infineon Technologies AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including undulated profile of net doping in a...
- Patent number 10,211,325
- Issue date Feb 19, 2019
- Infineon Technologies AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a vertical ed...
- Patent number 10,049,912
- Issue date Aug 14, 2018
- Infineon Technologies AG
- Alexander Breymesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with channelstopper and method for producing t...
- Patent number 10,038,052
- Issue date Jul 31, 2018
- Infineon Technologies AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device edge structure
- Patent number 9,905,634
- Issue date Feb 27, 2018
- Infineon Technologies Austria AG
- Andre Schwagmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a vertical edge termination structur...
- Patent number 9,570,542
- Issue date Feb 14, 2017
- Infineon Technologies AG
- Alexander Breymesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor diode and method of manufacturing a semiconductor diode
- Patent number 9,385,181
- Issue date Jul 5, 2016
- Infineon Technologies AG
- Hans Peter Felsl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Soft switching semiconductor device and method for producing thereof
- Patent number 9,324,783
- Issue date Apr 26, 2016
- Infineon Technologies AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a field ring edge termination structure a...
- Patent number 9,293,524
- Issue date Mar 22, 2016
- Infineon Technologies AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a shielding structure
- Patent number 9,281,360
- Issue date Mar 8, 2016
- Infineon Technologies AG
- Karin Buchholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a semiconductor body and method for its p...
- Patent number 7,880,260
- Issue date Feb 1, 2011
- Infineon Technology Austria AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for producing it
- Patent number 7,781,842
- Issue date Aug 24, 2010
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for producing it
- Patent number 7,750,428
- Issue date Jul 6, 2010
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage diode with optimized turn-off method and corresponding...
- Patent number 7,705,369
- Issue date Apr 27, 2010
- Infineon Technologies AG
- Veli Kartal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT device and related device having robustness under extreme cond...
- Patent number 7,696,600
- Issue date Apr 13, 2010
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor diode and IGBT
- Patent number 7,635,909
- Issue date Dec 22, 2009
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor diode and production method suitable therefor
- Patent number 7,511,353
- Issue date Mar 31, 2009
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor component
- Patent number 7,291,899
- Issue date Nov 6, 2007
- Infineon Technologies AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor having a field zone
- Patent number 7,268,079
- Issue date Sep 11, 2007
- Infineon Technologies AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power semiconductor component
- Patent number 7,233,031
- Issue date Jun 19, 2007
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Component with Edge Termination Region
- Publication number 20210257489
- Publication date Aug 19, 2021
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with an Edge Termination Structure
- Publication number 20200335579
- Publication date Oct 22, 2020
- INFINEON TECHNOLOGIES AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Component with Edge Termination Region
- Publication number 20190237575
- Publication date Aug 1, 2019
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing a Semiconductor Component Having a Channel Sto...
- Publication number 20190198610
- Publication date Jun 27, 2019
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device Having an Undulated...
- Publication number 20190157435
- Publication date May 23, 2019
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE TERMINATION STRUCTURE
- Publication number 20180114841
- Publication date Apr 26, 2018
- INFINEON TECHNOLOGIES AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device Having a Vertical Ed...
- Publication number 20170148663
- Publication date May 25, 2017
- INFINEON TECHNOLOGIES AG
- Alexander Breymesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Edge Structure
- Publication number 20170005163
- Publication date Jan 5, 2017
- INFINEON TECHNOLOGIES AG
- Andre Schwagmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device With Channelstopper and Method for Producing t...
- Publication number 20160293691
- Publication date Oct 6, 2016
- INFINEON TECHNOLOGIES AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOFT SWITCHING SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THEREOF
- Publication number 20160093690
- Publication date Mar 31, 2016
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Shielding Structure
- Publication number 20160049463
- Publication date Feb 18, 2016
- INFINEON TECHNOLOGIES AG
- Karin Buchholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Field Ring Edge Termination Structure a...
- Publication number 20150318347
- Publication date Nov 5, 2015
- INFINEON TECHNOLOGIES AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A VERTICAL EDGE TERMINATION STRUCTUR...
- Publication number 20150279930
- Publication date Oct 1, 2015
- INFINEON TECHNOLOGIES AG
- Alexander Breymesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including Undulated Profile of Net Doping in a...
- Publication number 20150214347
- Publication date Jul 30, 2015
- INFINEON TECHNOLOGIES AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Diode and Method of Manufacturing a Semiconductor Diode
- Publication number 20150206983
- Publication date Jul 23, 2015
- INFINEON TECHNOLOGIES AG
- Hans Peter Felsl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY AND METHOD FOR ITS P...
- Publication number 20090261379
- Publication date Oct 22, 2009
- Infineon Technologies Austria AG
- Elmar FALCK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING IT
- Publication number 20080265329
- Publication date Oct 30, 2008
- INFINEON TECHNOLOGIES AUSTRIA AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING IT
- Publication number 20080265277
- Publication date Oct 30, 2008
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT device and related device having robustness under extreme cond...
- Publication number 20070170514
- Publication date Jul 26, 2007
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor component with PN junction
- Publication number 20070080422
- Publication date Apr 12, 2007
- Infineon Technologies AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating field rings
- Publication number 20060051923
- Publication date Mar 9, 2006
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-voltage diode with optimized turn-off method and corresponding...
- Publication number 20050230702
- Publication date Oct 20, 2005
- Infineon Technologies AG
- Veli Kartal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor diode and IGBT
- Publication number 20050161746
- Publication date Jul 28, 2005
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor diode and production method suitable therefor
- Publication number 20050116249
- Publication date Jun 2, 2005
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor component
- Publication number 20050116287
- Publication date Jun 2, 2005
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical power semiconductor component
- Publication number 20050035405
- Publication date Feb 17, 2005
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS

Elmar Falck

Person

Patents Grantslast 30 patents

Semiconductor component with edge termination region

Semiconductor component with edge termination region

Method for producing a semiconductor component having a channel sto...

Method of manufacturing a semiconductor device having an undulated...

Power semiconductor device termination structure

Semiconductor device including undulated profile of net doping in a...

Method of manufacturing a semiconductor device having a vertical ed...

Semiconductor device with channelstopper and method for producing t...

Power semiconductor device edge structure

Semiconductor device including a vertical edge termination structur...

Semiconductor diode and method of manufacturing a semiconductor diode

Soft switching semiconductor device and method for producing thereof

Semiconductor device with a field ring edge termination structure a...

Semiconductor device with a shielding structure

Semiconductor device with a semiconductor body and method for its p...

Semiconductor device and method for producing it

Semiconductor device and method for producing it

High-voltage diode with optimized turn-off method and corresponding...

IGBT device and related device having robustness under extreme cond...

Semiconductor diode and IGBT

Semiconductor diode and production method suitable therefor

Power semiconductor component

Method for fabricating a semiconductor having a field zone

Vertical power semiconductor component

Patents Applicationslast 30 patents

Semiconductor Component with Edge Termination Region

Semiconductor Device with an Edge Termination Structure

Semiconductor Component with Edge Termination Region

Method for Producing a Semiconductor Component Having a Channel Sto...

Method of Manufacturing a Semiconductor Device Having an Undulated...

POWER SEMICONDUCTOR DEVICE TERMINATION STRUCTURE

Method of Manufacturing a Semiconductor Device Having a Vertical Ed...

Power Semiconductor Device Edge Structure

Semiconductor Device With Channelstopper and Method for Producing t...

SOFT SWITCHING SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THEREOF

Semiconductor Device with a Shielding Structure

Semiconductor Device with a Field Ring Edge Termination Structure a...

SEMICONDUCTOR DEVICE INCLUDING A VERTICAL EDGE TERMINATION STRUCTUR...

Semiconductor Device Including Undulated Profile of Net Doping in a...

Semiconductor Diode and Method of Manufacturing a Semiconductor Diode

SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY AND METHOD FOR ITS P...

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING IT

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING IT

IGBT device and related device having robustness under extreme cond...

Semiconductor component with PN junction

Method for fabricating field rings

High-voltage diode with optimized turn-off method and corresponding...

Semiconductor diode and IGBT

Semiconductor diode and production method suitable therefor

Power semiconductor component

Vertical power semiconductor component