Emi Ishida

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Ion implantation with improved ion source life expectancy
- Patent number 6,756,600
- Issue date Jun 29, 2004
- Advanced Micro Devices, Inc.
- Che-Hoo Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor processing employing a semiconductor spacer
- Patent number 6,642,134
- Issue date Nov 4, 2003
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of inhibiting lateral diffusion between adjacent wells by in...
- Patent number 6,514,833
- Issue date Feb 4, 2003
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple channel implantation to form retrograde channel profile an...
- Patent number 6,506,640
- Issue date Jan 14, 2003
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate formation method for reduced poly-depletion and boron penetration
- Patent number 6,482,725
- Issue date Nov 19, 2002
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen implantation for reduction of junction capacitance in MOS tr...
- Patent number 6,475,868
- Issue date Nov 5, 2002
- Advanced Micro Devices, Inc.
- Ming Yin Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor processing utilizing UV-nitride removable spacer and...
- Patent number 6,472,283
- Issue date Oct 29, 2002
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fabrication with multiple low dose implant
- Patent number 6,455,385
- Issue date Sep 24, 2002
- Advanced Micro Devices, Inc.
- Roger L. Alvis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser tailoring retrograde channel profile in surfaces
- Patent number 6,444,550
- Issue date Sep 3, 2002
- Advanced Micro Devices, Inc.
- Ming-Yin Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Removable spacer technology using ion implantation to augment etch...
- Patent number 6,429,083
- Issue date Aug 6, 2002
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial delta doping for retrograde channel profile
- Patent number 6,426,279
- Issue date Jul 30, 2002
- Advanced Micro Devices, Inc.
- Carl Huster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Retrograde well structure formation by nitrogen implantation
- Patent number 6,423,601
- Issue date Jul 23, 2002
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with asymmetric channel dopant profile
- Patent number 6,410,393
- Issue date Jun 25, 2002
- Advanced Micro Devices, Inc.
- Ming-Yin Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain doping technique for ultra-thin-body SOI MOS transistors
- Patent number 6,403,433
- Issue date Jun 11, 2002
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with metal in gate for reduced gate resistance
- Patent number 6,395,606
- Issue date May 28, 2002
- Advanced Micro Devices, Inc.
- Carl R. Huster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium retrograde channel doping for improved gate oxide reliability
- Patent number 6,372,582
- Issue date Apr 16, 2002
- Advanced Micro Devices, Inc.
- Richard P. Rouse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form narrow structure using double-damascene process
- Patent number 6,355,528
- Issue date Mar 12, 2002
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Removable spacer technology using ion implantation for forming asym...
- Patent number 6,344,396
- Issue date Feb 5, 2002
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS-type transistor processing utilizing UV-nitride removable space...
- Patent number 6,342,423
- Issue date Jan 29, 2002
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of knocked-on oxygen atoms for reduction of transient enhanced...
- Patent number 6,337,260
- Issue date Jan 8, 2002
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having shallow junct...
- Patent number 6,316,319
- Issue date Nov 13, 2001
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices having uniform, fully...
- Patent number 6,277,698
- Issue date Aug 21, 2001
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit fabrication method which optimizes source/drain contact res...
- Patent number 6,265,291
- Issue date Jul 24, 2001
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS semiconductor device containing N-channel transistor having sh...
- Patent number 6,245,623
- Issue date Jun 12, 2001
- Advanced Micro Devices, Inc.
- Dong-Hyuk Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of tilted implant for pocket, halo and source/drain extensio...
- Patent number 6,190,980
- Issue date Feb 20, 2001
- Advanced Micro Devices
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Very low thermal budget channel implant process for semiconductors
- Patent number 6,180,468
- Issue date Jan 30, 2001
- Advanced Micro Devices Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deuterium doping for hot carrier reliability improvement
- Patent number 6,143,632
- Issue date Nov 7, 2000
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide spacers as solid sources for gallium dopant introduction
- Patent number 6,117,719
- Issue date Sep 12, 2000
- Advanced Micro Devices, Inc.
- Scott Luning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of boron penetration by laser anneal removal of fluorine
- Patent number 6,100,171
- Issue date Aug 8, 2000
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
End-of-range damage suppression for ultra-shallow junction formation
- Patent number 6,074,937
- Issue date Jun 13, 2000
- Advanced Micro Devices, Inc.
- Shekhar Pramanick
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR PROCESSING EMPLOYING A SEMICONDUCTING SPACER
- Publication number 20030170969
- Publication date Sep 11, 2003
- EMI ISHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION WITH IMPROVED ION SOURCE LIFE EXPECTANCY
- Publication number 20020000523
- Publication date Jan 3, 2002
- CHE-HOO NG
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Ion implantation with improved ion source life expectancy

Semiconductor processing employing a semiconductor spacer

Method of inhibiting lateral diffusion between adjacent wells by in...

Multiple channel implantation to form retrograde channel profile an...

Gate formation method for reduced poly-depletion and boron penetration

Oxygen implantation for reduction of junction capacitance in MOS tr...

MOS transistor processing utilizing UV-nitride removable spacer and...

Semiconductor fabrication with multiple low dose implant

Laser tailoring retrograde channel profile in surfaces

Removable spacer technology using ion implantation to augment etch...

Epitaxial delta doping for retrograde channel profile

Retrograde well structure formation by nitrogen implantation

Semiconductor device with asymmetric channel dopant profile

Source/drain doping technique for ultra-thin-body SOI MOS transistors

MOSFET with metal in gate for reduced gate resistance

Indium retrograde channel doping for improved gate oxide reliability

Method to form narrow structure using double-damascene process

Removable spacer technology using ion implantation for forming asym...

MOS-type transistor processing utilizing UV-nitride removable space...

Use of knocked-on oxygen atoms for reduction of transient enhanced...

Method of manufacturing a semiconductor device having shallow junct...

Method of manufacturing semiconductor devices having uniform, fully...

Circuit fabrication method which optimizes source/drain contact res...

CMOS semiconductor device containing N-channel transistor having sh...

Method of tilted implant for pocket, halo and source/drain extensio...

Very low thermal budget channel implant process for semiconductors

Deuterium doping for hot carrier reliability improvement

Oxide spacers as solid sources for gallium dopant introduction

Reduction of boron penetration by laser anneal removal of fluorine

End-of-range damage suppression for ultra-shallow junction formation

Patents Applicationslast 30 patents

SEMICONDUCTOR PROCESSING EMPLOYING A SEMICONDUCTING SPACER

ION IMPLANTATION WITH IMPROVED ION SOURCE LIFE EXPECTANCY