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Niiza-shi, JP
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Patents Grants
last 30 patents
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Patent Grant
Nitride-based semiconductor device with reduced leakage current
Patent number
7,745,850
Issue date
Jun 29, 2010
Sanken Electric Co., Ltd.
Koji Otsuka
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Light emitting semiconductor element with ZN doping
Patent number
5,814,838
Issue date
Sep 29, 1998
Sanken Electric Co., Ltd.
Koji Ohtsuka
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
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Patent Application
Semiconductor device with reduced leakage current, and method of fa...
Publication number
20060118824
Publication date
Jun 8, 2006
Sanken Electric Co., Ltd
Koji Otsuka
H01 - BASIC ELECTRIC ELEMENTS