Emre Alptekin

Person

Wappingers Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Self aligned replacement metal source/drain FINFET
- Patent number 12,062,703
- Issue date Aug 13, 2024
- TESSERA LLC
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermally stable salicide formation for salicide first contacts
- Patent number 10,943,988
- Issue date Mar 9, 2021
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming thermally stable salicide for salicide first contacts
- Patent number 10,937,889
- Issue date Mar 2, 2021
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned replacement metal source/drain finFET
- Patent number 10,818,759
- Issue date Oct 27, 2020
- Tessera, Inc.
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts to semiconductor substrate and methods of forming same
- Patent number 10,707,167
- Issue date Jul 7, 2020
- GLOBALFOUNDRIES Inc.
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reliable gate contacts over active areas
- Patent number 10,693,005
- Issue date Jun 23, 2020
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming thermally stable salicide for salicide first contacts
- Patent number 10,546,941
- Issue date Jan 28, 2020
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermally stable salicide formation for salicide first contacts
- Patent number 10,453,935
- Issue date Oct 22, 2019
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned replacement metal source/drain finFET
- Patent number 10,418,450
- Issue date Sep 17, 2019
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reliable gate contacts over active areas
- Patent number 10,381,480
- Issue date Aug 13, 2019
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with reduced parasitic capacitance
- Patent number 10,326,000
- Issue date Jun 18, 2019
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel transistors with abrupt junctions
- Patent number 10,236,344
- Issue date Mar 19, 2019
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with reduced parasitic capacitance
- Patent number 10,170,581
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned source/drain contacts
- Patent number 10,121,789
- Issue date Nov 6, 2018
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating tunnel transistors with abrupt junctions
- Patent number 10,103,226
- Issue date Oct 16, 2018
- International Business Machines Corporation
- Reinaldo A. Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial spacer for increasing self aligned contact process margins
- Patent number 10,083,865
- Issue date Sep 25, 2018
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of metal resistor and e-fuse
- Patent number 9,997,411
- Issue date Jun 12, 2018
- International Business Machines Corporation
- Cung Tran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with reduced parasitic capacitance
- Patent number 9,985,109
- Issue date May 29, 2018
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact first replacement metal gate
- Patent number 9,985,104
- Issue date May 29, 2018
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial spacer for increasing self aligned contact process margins
- Patent number 9,929,047
- Issue date Mar 27, 2018
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts to semiconductor substrate and methods of forming same
- Patent number 9,865,546
- Issue date Jan 9, 2018
- GLOBALFOUNDRIES Inc.
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming stressed epitaxial layers between gates separated by differ...
- Patent number 9,818,873
- Issue date Nov 14, 2017
- GLOBALFOUNDRIES Inc.
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact fill in an integrated circuit
- Patent number 9,691,658
- Issue date Jun 27, 2017
- GLOBALFOUNDRIES Inc.
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin end spacer for preventing merger of raised active regions
- Patent number 9,679,993
- Issue date Jun 13, 2017
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with graphene nanoribbons
- Patent number 9,647,124
- Issue date May 9, 2017
- GLOBALFOUNDRIES Inc.
- Emre Alptekin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Fin end spacer for preventing merger of raised active regions
- Patent number 9,601,380
- Issue date Mar 21, 2017
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned source/drain contacts
- Patent number 9,576,957
- Issue date Feb 21, 2017
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion-controlled oxygen depletion of semiconductor contact inte...
- Patent number 9,553,157
- Issue date Jan 24, 2017
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure to suppress finFET heating
- Patent number 9,530,684
- Issue date Dec 27, 2016
- GLOBALFOUNDRIES Inc.
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unidirectional spacer in trench silicide
- Patent number 9,514,992
- Issue date Dec 6, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF ALIGNED REPLACEMENT METAL SOURCE/DRAIN FINFET
- Publication number 20210028287
- Publication date Jan 28, 2021
- Tessera, Inc.
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING THERMALLY STABLE SALICIDE FOR SALICIDE FIRST CONTACTS
- Publication number 20200058758
- Publication date Feb 20, 2020
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMALLY STABLE SALICIDE FORMATION FOR SALICIDE FIRST CONTACTS
- Publication number 20190348519
- Publication date Nov 14, 2019
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF ALIGNED REPLACEMENT METAL SOURCE/DRAIN FINFET
- Publication number 20190326406
- Publication date Oct 24, 2019
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH REDUCED PARASITIC CAPACITANCE
- Publication number 20190259852
- Publication date Aug 22, 2019
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RELIABLE GATE CONTACTS OVER ACTIVE AREAS
- Publication number 20190259869
- Publication date Aug 22, 2019
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RELIABLE GATE CONTACTS OVER ACTIVE AREAS
- Publication number 20190097016
- Publication date Mar 28, 2019
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMALLY STABLE SALICIDE FORMATION FOR SALICIDE FIRST CONTACTS
- Publication number 20180308951
- Publication date Oct 25, 2018
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMALLY STABLE SALICIDE FORMATION FOR SALICIDE FIRST CONTACTS
- Publication number 20180308952
- Publication date Oct 25, 2018
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED EFUSE
- Publication number 20180166402
- Publication date Jun 14, 2018
- GLOBALFOUNDRIES INC.
- Viraj SARDESAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH REDUCED PARASITIC CAPACITANCE
- Publication number 20180151686
- Publication date May 31, 2018
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH REDUCED PARASITIC CAPACITENCE
- Publication number 20180114847
- Publication date Apr 26, 2018
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH REDUCED PARASITIC CAPACITANCE
- Publication number 20180114846
- Publication date Apr 26, 2018
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACTS TO SEMICONDUCTOR SUBSTRATE AND METHODS OF FORMING SAME
- Publication number 20180090447
- Publication date Mar 29, 2018
- GLOBALFOUNDRIES INC.
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL SPACER FOR INCREASING SELF ALIGNED CONTACT PROCESS MARGINS
- Publication number 20180068893
- Publication date Mar 8, 2018
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT FIRST REPLACEMENT METAL GATE
- Publication number 20170194452
- Publication date Jul 6, 2017
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF ALIGNED REPLACEMENT METAL SOURCE/DRAIN FINFET
- Publication number 20170141197
- Publication date May 18, 2017
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SOURCE/DRAIN CONTACTS
- Publication number 20170117279
- Publication date Apr 27, 2017
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING STRESSED EPITAXIAL LAYER USING DUMMY GATES
- Publication number 20170104100
- Publication date Apr 13, 2017
- GLOBALFOUNDRIES INC.
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL SPACER FOR INCREASING SELF ALIGNED CONTACT PROCESS MARGINS
- Publication number 20160379882
- Publication date Dec 29, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACTS TO SEMICONDUCTOR SUBSTRATE AND METHODS OF FORMING SAME
- Publication number 20160358860
- Publication date Dec 8, 2016
- GLOBALFOUNDRIES INC.
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SOURCE/DRAIN CONTACTS
- Publication number 20160358916
- Publication date Dec 8, 2016
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIDIRECTIONAL SPACER IN TRENCH SILICIDE
- Publication number 20160329251
- Publication date Nov 10, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE TO SUPPRESS FINFET HEATING
- Publication number 20160284586
- Publication date Sep 29, 2016
- GLOBALFOUNDRIES INC.
- Emre ALPTEKIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS
- Publication number 20160284598
- Publication date Sep 29, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH GRAPHENE NANORIBBONS
- Publication number 20160190344
- Publication date Jun 30, 2016
- GLOBALFOUNDRIES INC.
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL SPACER FOR INCREASING SELF ALIGNED CONTACT PROCESS MARGINS
- Publication number 20160181392
- Publication date Jun 23, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDE MEDIATED EPITAXIAL NICKEL DISILICIDE ALLOY CONTACT FORMATION
- Publication number 20160118298
- Publication date Apr 28, 2016
- GLOBALFOUNDRIES INC.
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL TRANSISTORS WITH ABRUPT JUNCTIONS
- Publication number 20160043175
- Publication date Feb 11, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS
- Publication number 20160035875
- Publication date Feb 4, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS

Emre Alptekin

Person

Patents Grantslast 30 patents

Self aligned replacement metal source/drain FINFET

Thermally stable salicide formation for salicide first contacts

Forming thermally stable salicide for salicide first contacts

Self aligned replacement metal source/drain finFET

Contacts to semiconductor substrate and methods of forming same

Reliable gate contacts over active areas

Forming thermally stable salicide for salicide first contacts

Thermally stable salicide formation for salicide first contacts

Self aligned replacement metal source/drain finFET

Reliable gate contacts over active areas

FinFET with reduced parasitic capacitance

Tunnel transistors with abrupt junctions

FinFET with reduced parasitic capacitance

Self-aligned source/drain contacts

Method of fabricating tunnel transistors with abrupt junctions

Partial spacer for increasing self aligned contact process margins

Formation of metal resistor and e-fuse

FinFET with reduced parasitic capacitance

Contact first replacement metal gate

Partial spacer for increasing self aligned contact process margins

Contacts to semiconductor substrate and methods of forming same

Forming stressed epitaxial layers between gates separated by differ...

Contact fill in an integrated circuit

Fin end spacer for preventing merger of raised active regions

Semiconductor devices with graphene nanoribbons

Fin end spacer for preventing merger of raised active regions

Self-aligned source/drain contacts

Diffusion-controlled oxygen depletion of semiconductor contact inte...

Method and structure to suppress finFET heating

Unidirectional spacer in trench silicide

Patents Applicationslast 30 patents

SELF ALIGNED REPLACEMENT METAL SOURCE/DRAIN FINFET

FORMING THERMALLY STABLE SALICIDE FOR SALICIDE FIRST CONTACTS

THERMALLY STABLE SALICIDE FORMATION FOR SALICIDE FIRST CONTACTS

SELF ALIGNED REPLACEMENT METAL SOURCE/DRAIN FINFET

FINFET WITH REDUCED PARASITIC CAPACITANCE

RELIABLE GATE CONTACTS OVER ACTIVE AREAS

RELIABLE GATE CONTACTS OVER ACTIVE AREAS

THERMALLY STABLE SALICIDE FORMATION FOR SALICIDE FIRST CONTACTS

THERMALLY STABLE SALICIDE FORMATION FOR SALICIDE FIRST CONTACTS

INTEGRATED EFUSE

FINFET WITH REDUCED PARASITIC CAPACITANCE

FINFET WITH REDUCED PARASITIC CAPACITENCE

FINFET WITH REDUCED PARASITIC CAPACITANCE

CONTACTS TO SEMICONDUCTOR SUBSTRATE AND METHODS OF FORMING SAME

PARTIAL SPACER FOR INCREASING SELF ALIGNED CONTACT PROCESS MARGINS

CONTACT FIRST REPLACEMENT METAL GATE

SELF ALIGNED REPLACEMENT METAL SOURCE/DRAIN FINFET

SELF-ALIGNED SOURCE/DRAIN CONTACTS

FORMING STRESSED EPITAXIAL LAYER USING DUMMY GATES

PARTIAL SPACER FOR INCREASING SELF ALIGNED CONTACT PROCESS MARGINS

CONTACTS TO SEMICONDUCTOR SUBSTRATE AND METHODS OF FORMING SAME

SELF-ALIGNED SOURCE/DRAIN CONTACTS

UNIDIRECTIONAL SPACER IN TRENCH SILICIDE

METHOD AND STRUCTURE TO SUPPRESS FINFET HEATING

FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS

SEMICONDUCTOR DEVICES WITH GRAPHENE NANORIBBONS

PARTIAL SPACER FOR INCREASING SELF ALIGNED CONTACT PROCESS MARGINS

OXIDE MEDIATED EPITAXIAL NICKEL DISILICIDE ALLOY CONTACT FORMATION

TUNNEL TRANSISTORS WITH ABRUPT JUNCTIONS

FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS