Enbo WANG

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Method of fabrication thereof a multi-level vertical memory device...
- Patent number 11,805,643
- Issue date Oct 31, 2023
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang Zhang
Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 11,737,263
- Issue date Aug 22, 2023
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming contact structures in three-dimensional memory d...
- Patent number 11,716,843
- Issue date Aug 1, 2023
- Yangtze Memory Technologies Co., Ltd.
- Han Yang
Information Patent Grant
Multi-level vertical memory device including inter-level channel co...
- Patent number 11,502,094
- Issue date Nov 15, 2022
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 11,145,667
- Issue date Oct 12, 2021
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Through array contact (TAC) for three-dimensional memory devices
- Patent number 10,937,806
- Issue date Mar 2, 2021
- Yangtze Memory Technologies Co., Ltd.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inter-deck plug in three-dimensional memory device and method for f...
- Patent number 10,892,280
- Issue date Jan 12, 2021
- Yangtze Memory Technologies Co., Ltd.
- Qianbin Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inter-deck plug in three-dimensional memory device and method for f...
- Patent number 10,741,578
- Issue date Aug 11, 2020
- Yangtze Memory Technologies Co., Ltd.
- Qianbin Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor plug protected by protective dielectric layer in thre...
- Patent number 10,714,493
- Issue date Jul 14, 2020
- Yangtze Memory Technologies Co., Ltd.
- Haohao Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device having semiconductor plug formed us...
- Patent number 10,679,985
- Issue date Jun 9, 2020
- Yangtze Memory Technologies Co., Ltd.
- Shasha Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of semiconductor device fabrication
- Patent number 10,665,500
- Issue date May 26, 2020
- Yangtze Memory Technologies Co., Ltd.
- Sha Sha Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through array contact (TAC) for three-dimensional memory devices
- Patent number 10,658,378
- Issue date May 19, 2020
- Yangtze Memory Technologies Co., Ltd.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and forming method thereof
- Patent number 10,651,193
- Issue date May 12, 2020
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20230337423
- Publication date Oct 19, 2023
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION THEREOF
- Publication number 20210398999
- Publication date Dec 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20210391347
- Publication date Dec 16, 2021
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FORMING CONTACT STRUCTURES IN THREE-DIMENSIONAL MEMORY D...
- Publication number 20210296346
- Publication date Sep 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Han YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTER-DECK PLUG IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR F...
- Publication number 20200335515
- Publication date Oct 22, 2020
- Yangtze Memory Technologies Co., Ltd.
- Qianbin Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT (TAC) FOR THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20200266211
- Publication date Aug 20, 2020
- Yangtze Memory Technologies Co., Ltd.
- Qian TAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF SEMICONDUCTOR DEVICE FABRICATION
- Publication number 20200185270
- Publication date Jun 11, 2020
- Yangtze Memory Technologies Co., Ltd.
- Sha Sha Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE HAVING SEMICONDUCTOR PLUG FORMED US...
- Publication number 20200126974
- Publication date Apr 23, 2020
- Yangtze Memory Technologies Co., Ltd.
- Shasha Liu
- G11 - INFORMATION STORAGE
Information Patent Application
INTER-DECK PLUG IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR F...
- Publication number 20200111807
- Publication date Apr 9, 2020
- Yangtze Memory Technologies Co., Ltd.
- Qianbin Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION THEREOF
- Publication number 20200105778
- Publication date Apr 2, 2020
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR PLUG PROTECTED BY PROTECTIVE DIELECTRIC LAYER IN THRE...
- Publication number 20200105781
- Publication date Apr 2, 2020
- Yangtze Memory Technologies Co., Ltd.
- Haohao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20200091166
- Publication date Mar 19, 2020
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Device and Forming Method Thereof
- Publication number 20190378853
- Publication date Dec 12, 2019
- Yangtze Memory Technologies Co., Ltd.
- Li Hong XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH ARRAY CONTACT (TAC) FOR THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20190341399
- Publication date Nov 7, 2019
- Yangtze Memory Technologies Co., Ltd.
- Qian TAO
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method of fabrication thereof a multi-level vertical memory device...

3D NAND memory device and method of forming the same

Method for forming contact structures in three-dimensional memory d...

Multi-level vertical memory device including inter-level channel co...

3D NAND memory device and method of forming the same

Through array contact (TAC) for three-dimensional memory devices

Inter-deck plug in three-dimensional memory device and method for f...

Inter-deck plug in three-dimensional memory device and method for f...

Semiconductor plug protected by protective dielectric layer in thre...

Three-dimensional memory device having semiconductor plug formed us...

Methods of semiconductor device fabrication

Through array contact (TAC) for three-dimensional memory devices

Memory device and forming method thereof

Patents Applicationslast 30 patents

NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION THEREOF

NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

METHOD FOR FORMING CONTACT STRUCTURES IN THREE-DIMENSIONAL MEMORY D...

INTER-DECK PLUG IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR F...

THROUGH ARRAY CONTACT (TAC) FOR THREE-DIMENSIONAL MEMORY DEVICES

METHODS OF SEMICONDUCTOR DEVICE FABRICATION

THREE-DIMENSIONAL MEMORY DEVICE HAVING SEMICONDUCTOR PLUG FORMED US...

INTER-DECK PLUG IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR F...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION THEREOF

SEMICONDUCTOR PLUG PROTECTED BY PROTECTIVE DIELECTRIC LAYER IN THRE...

NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

Memory Device and Forming Method Thereof

THROUGH ARRAY CONTACT (TAC) FOR THREE-DIMENSIONAL MEMORY DEVICES