Erdem Arkun

Person

San Carlos, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
III-N semiconductor layer on Si substrate
- Patent number 9,917,193
- Issue date Mar 13, 2018
- Translucent, Inc.
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress mitigating amorphous SiO2 interlayer
- Patent number 9,824,886
- Issue date Nov 21, 2017
- Translucent, Inc.
- Rytis Dargis
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nucleation of III-N on REO templates
- Patent number 9,496,132
- Issue date Nov 15, 2016
- Translucent, Inc.
- Erdem Arkun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing III-N semiconductor layer on Si substrate
- Patent number 9,460,917
- Issue date Oct 4, 2016
- Translucent, Inc.
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain compensated REO buffer for III-N on silicon
- Patent number 9,443,939
- Issue date Sep 13, 2016
- Translucent, Inc.
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructure with carrier concentration enhanced by single cryst...
- Patent number 9,431,526
- Issue date Aug 30, 2016
- Translucent, Inc.
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N material grown on REN epitaxial buffer on Si substrate
- Patent number 9,236,249
- Issue date Jan 12, 2016
- Translucent, Inc.
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N material grown on ErAlN buffer on Si substrate
- Patent number 9,142,406
- Issue date Sep 22, 2015
- Translucent, Inc.
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rare earth oxy-nitride buffered III-N on silicon
- Patent number 9,105,471
- Issue date Aug 11, 2015
- Translucent, Inc.
- Andrew Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N material grown on ErAIN buffer on Si substrate
- Patent number 8,994,032
- Issue date Mar 31, 2015
- Translucent, Inc.
- Erdem Arkun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
REO gate dielectric for III-N device on Si substrate
- Patent number 8,878,188
- Issue date Nov 4, 2014
- Translucent, Inc.
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
AlN cap grown on GaN/REO/silicon substrate structure
- Patent number 8,872,308
- Issue date Oct 28, 2014
- Translucent, Inc.
- Erdem Arkun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN on Si(100) substrate using epi-twist
- Patent number 8,846,504
- Issue date Sep 30, 2014
- Translucent, Inc.
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IIIOxNy on single crystal SOI substrate and III n growth platform
- Patent number 8,835,955
- Issue date Sep 16, 2014
- Translucent, Inc.
- Erdem Arkun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N material grown on AIO/AIN buffer on Si substrate
- Patent number 8,823,025
- Issue date Sep 2, 2014
- Translucent, Inc.
- Erdem Arkun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
REO/ALO/A1N template for III-N material growth on silicon
- Patent number 8,823,055
- Issue date Sep 2, 2014
- Translucent, Inc.
- Erdem Arkun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress mitigating amorphous SiO2 interlayer
- Patent number 8,796,121
- Issue date Aug 5, 2014
- Translucent, Inc.
- Rytis Dargis
- C30 - CRYSTAL GROWTH
Information Patent Grant
Re-silicide gate electrode for III-N device on Si substrate
- Patent number 8,748,900
- Issue date Jun 10, 2014
- Translucent, Inc.
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystalline REO template on silicon substrate
- Patent number 8,679,953
- Issue date Mar 25, 2014
- Translucent, Inc.
- Andrew Clark
- C30 - CRYSTAL GROWTH
Information Patent Grant
A1N inter-layers in III-N material grown on DBR/silicon substrate
- Patent number 8,680,507
- Issue date Mar 25, 2014
- Translucent, Inc.
- Erdem Arkun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IR sensor using REO up-conversion
- Patent number 8,664,735
- Issue date Mar 4, 2014
- Translucent, Inc.
- Erdem Arkun
- G01 - MEASURING TESTING
Information Patent Grant
AlN inter-layers in III-N material grown on REO/silicon substrate
- Patent number 8,633,569
- Issue date Jan 21, 2014
- Translucent, Inc.
- Erdem Arkun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon, aluminum oxide, aluminum nitride template for optoelectron...
- Patent number 8,623,747
- Issue date Jan 7, 2014
- Translucent, Inc.
- Erdem Arkun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modification of REO by subsequent III-N EPI process
- Patent number 8,501,635
- Issue date Aug 6, 2013
- Translucent, Inc.
- Andrew Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ge quantum dots for dislocation engineering of III-N on silicon
- Patent number 8,455,881
- Issue date Jun 4, 2013
- Translucent, Inc.
- Erdem Arkun
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
III-N SEMICONDUCTOR LAYER ON Si SUBSTRATE
- Publication number 20170054025
- Publication date Feb 23, 2017
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS MITIGATING AMORPHOUS SiO2 INTERLAYER
- Publication number 20160240375
- Publication date Aug 18, 2016
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N EPITAXY ON MULTILAYER BUFFER WITH PROTECTIVE TOP LAYER
- Publication number 20160181093
- Publication date Jun 23, 2016
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN COMPENSATED REO BUFFER FOR III-N ON SILICON
- Publication number 20160133708
- Publication date May 12, 2016
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N SEMICONDUCTOR LAYER ON Si SUBSTRATE
- Publication number 20150228484
- Publication date Aug 13, 2015
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROSTRUCTURE WITH CARRIER CONCENTRATION ENHANCED BY SINGLE CRYST...
- Publication number 20150069409
- Publication date Mar 12, 2015
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N MATERIAL GROWN ON REN EPITAXIAL BUFFER ON Si SUBSTRATE
- Publication number 20150014676
- Publication date Jan 15, 2015
- RYTIS DARGIS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N MATERIAL GROWN ON ErAlN BUFFER ON Si SUBSTRATE
- Publication number 20140246679
- Publication date Sep 4, 2014
- Erdem Arkun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REO GATE DIELECTRIC FOR III-N DEVICE ON Si SUBSTRATE
- Publication number 20140239307
- Publication date Aug 28, 2014
- RYTIS DARGIS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AlN CAP GROWN ON GaN/REO/SILICON SUBSTRATE STRUCTURE
- Publication number 20140231818
- Publication date Aug 21, 2014
- Erdem Arkun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N MATERIAL GROWN ON ALO/ALN BUFFER ON SI SUBSTRATE
- Publication number 20140231817
- Publication date Aug 21, 2014
- Erdem Arkun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REO/ALO/AlN TEMPLATE FOR III-N MATERIAL GROWTH ON SILICON
- Publication number 20140225123
- Publication date Aug 14, 2014
- Erdem Arkun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REO/ALO/AlN TEMPLATE FOR III-N MATERIAL GROWTH ON SILICON
- Publication number 20140167057
- Publication date Jun 19, 2014
- Erdem Arkun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NUCLEATION OF III-N ON REO TEMPLATES
- Publication number 20130248853
- Publication date Sep 26, 2013
- Erdem Arkun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N ON SILICON USING NANO STRUCTURED INTERFACE LAYER
- Publication number 20130214282
- Publication date Aug 22, 2013
- Erdem Arkun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN COMPENSATED REO BUFFER FOR III-N ON SILICON
- Publication number 20130099357
- Publication date Apr 25, 2013
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ge QUANTUM DOTS FOR DISLOCATION ENGINEERING OF III-N ON SILICON
- Publication number 20130069039
- Publication date Mar 21, 2013
- Erdem Arkun
- B82 - NANO-TECHNOLOGY
Information Patent Application
RARE EARTH OXY-NITRIDE BUFFERED III-N ON SILICON
- Publication number 20130032858
- Publication date Feb 7, 2013
- Andrew Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single Crystal Ge On Si
- Publication number 20120280276
- Publication date Nov 8, 2012
- Rytis Dargis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IR SENSOR USING REO UP-CONVERSION
- Publication number 20120241890
- Publication date Sep 27, 2012
- Andrew Clark
- G01 - MEASURING TESTING
Information Patent Application
IIIOxNy ON SINGLE CRYSTAL SOI SUBSTRATE AND III n GROWTH PLATFORM
- Publication number 20120104443
- Publication date May 3, 2012
- Andrew Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IIIOxNy ON REO/Si
- Publication number 20120104567
- Publication date May 3, 2012
- Andrew Clark
- H01 - BASIC ELECTRIC ELEMENTS

Erdem Arkun

Person

Patents Grantslast 30 patents

III-N semiconductor layer on Si substrate

Stress mitigating amorphous SiO2 interlayer

Nucleation of III-N on REO templates

Method of growing III-N semiconductor layer on Si substrate

Strain compensated REO buffer for III-N on silicon

Heterostructure with carrier concentration enhanced by single cryst...

III-N material grown on REN epitaxial buffer on Si substrate

III-N material grown on ErAlN buffer on Si substrate

Rare earth oxy-nitride buffered III-N on silicon

III-N material grown on ErAIN buffer on Si substrate

REO gate dielectric for III-N device on Si substrate

AlN cap grown on GaN/REO/silicon substrate structure

GaN on Si(100) substrate using epi-twist

IIIOxNy on single crystal SOI substrate and III n growth platform

III-N material grown on AIO/AIN buffer on Si substrate

REO/ALO/A1N template for III-N material growth on silicon

Stress mitigating amorphous SiO2 interlayer

Re-silicide gate electrode for III-N device on Si substrate

Crystalline REO template on silicon substrate

A1N inter-layers in III-N material grown on DBR/silicon substrate

IR sensor using REO up-conversion

AlN inter-layers in III-N material grown on REO/silicon substrate

Silicon, aluminum oxide, aluminum nitride template for optoelectron...

Modification of REO by subsequent III-N EPI process

Ge quantum dots for dislocation engineering of III-N on silicon

Patents Applicationslast 30 patents

III-N SEMICONDUCTOR LAYER ON Si SUBSTRATE

STRESS MITIGATING AMORPHOUS SiO2 INTERLAYER

III-N EPITAXY ON MULTILAYER BUFFER WITH PROTECTIVE TOP LAYER

STRAIN COMPENSATED REO BUFFER FOR III-N ON SILICON

III-N SEMICONDUCTOR LAYER ON Si SUBSTRATE

HETEROSTRUCTURE WITH CARRIER CONCENTRATION ENHANCED BY SINGLE CRYST...

III-N MATERIAL GROWN ON REN EPITAXIAL BUFFER ON Si SUBSTRATE

III-N MATERIAL GROWN ON ErAlN BUFFER ON Si SUBSTRATE

REO GATE DIELECTRIC FOR III-N DEVICE ON Si SUBSTRATE

AlN CAP GROWN ON GaN/REO/SILICON SUBSTRATE STRUCTURE

III-N MATERIAL GROWN ON ALO/ALN BUFFER ON SI SUBSTRATE

REO/ALO/AlN TEMPLATE FOR III-N MATERIAL GROWTH ON SILICON

REO/ALO/AlN TEMPLATE FOR III-N MATERIAL GROWTH ON SILICON

NUCLEATION OF III-N ON REO TEMPLATES

III-N ON SILICON USING NANO STRUCTURED INTERFACE LAYER

STRAIN COMPENSATED REO BUFFER FOR III-N ON SILICON

Ge QUANTUM DOTS FOR DISLOCATION ENGINEERING OF III-N ON SILICON

RARE EARTH OXY-NITRIDE BUFFERED III-N ON SILICON

Single Crystal Ge On Si

IR SENSOR USING REO UP-CONVERSION

IIIOxNy ON SINGLE CRYSTAL SOI SUBSTRATE AND III n GROWTH PLATFORM

IIIOxNy ON REO/Si