Erdmann Frederick Schubert

Person

Brookline, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Fixture and method for laser fabrication by in-situ cleaving of sem...
- Patent number 5,719,077
- Issue date Feb 17, 1998
- Lucent Technologies Inc.
- Utpal Kumar Chakrabarti
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Gallium oxide coatings for optoelectronic devices using electron be...
- Patent number 5,550,089
- Issue date Aug 27, 1996
- Lucent Technologies Inc.
- Niloy K. Dutta
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Electron beam deposition of gallium oxide thin films using a single...
- Patent number 5,451,548
- Issue date Sep 19, 1995
- AT&T Corp.
- Neil E. J. Hunt
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Single mirror light-emitting diodes with enhanced intensity
- Patent number 5,362,977
- Issue date Nov 8, 1994
- AT&T Bell Laboratories
- Neil E. J. Hunt
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Absorption resonant rare earth-doped micro-cavities
- Patent number 5,363,398
- Issue date Nov 8, 1994
- AT&T Bell Laboratories
- Alastair M. Glass
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Photodetector with a resonant cavity
- Patent number 5,315,128
- Issue date May 24, 1994
- AT&T Bell Laboratories
- Neil E. J. Hunt
- G01 - MEASURING TESTING
Information Patent Grant
P-N junction devices with group IV element-doped group III-V compou...
- Patent number 5,268,582
- Issue date Dec 7, 1993
- AT&T Bell Laboratories
- Rose F. Kopf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Erbium doped optical devices
- Patent number 5,249,195
- Issue date Sep 28, 1993
- AT&T Bell Laboratories
- Leonard C. Feldman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diode
- Patent number 5,226,053
- Issue date Jul 6, 1993
- AT&T Bell Laboratories
- Alfred Y. Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices having repetitive layers
- Patent number 5,226,055
- Issue date Jul 6, 1993
- AT&T Bell Laboratories
- Stephen W. Downey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical devices with electron-beam evaporated multilayer mirror
- Patent number 5,206,871
- Issue date Apr 27, 1993
- AT&T Bell Laboratories
- Dennis G. Deppe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Elimination of heterojunction band discontinuities
- Patent number 5,170,407
- Issue date Dec 8, 1992
- AT&T Bell Laboratories
- Erdmann F. Schubert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical cavity surface emmitting lasers with transparent electrodes
- Patent number 5,115,441
- Issue date May 19, 1992
- AT&T Bell Laboratories
- Rose F. Kopf
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical cavity surface emitting lasers with electrically conductin...
- Patent number 5,068,868
- Issue date Nov 26, 1991
- AT&T Bell Laboratories
- Dennis G. Deppe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices having asymmetric delta-doping
- Patent number 5,031,012
- Issue date Jul 9, 1991
- AT&T Bell Laboratories
- John E. Cunningham
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Doping procedures for semiconductor devices
- Patent number 5,024,967
- Issue date Jun 18, 1991
- AT&T Bell Laboratories
- Rose F. Kopf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical cavity semiconductor lasers
- Patent number 5,018,157
- Issue date May 21, 1991
- AT&T Bell Laboratories
- Dennis G. Deppe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical system including wavelength-tunable semiconductor laser
- Patent number 4,980,892
- Issue date Dec 25, 1990
- AT&T Bell Laboratories
- John E. Cunningham
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Devices having asymmetric delta-doping
- Patent number 4,974,044
- Issue date Nov 27, 1990
- AT&T Bell Laboratories
- John E. Cunningham
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Optical communications modulator device
- Patent number 4,929,064
- Issue date May 29, 1990
- American Telephone and Telegraph Company
- Erdmann F. Schubert
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for fabricating a field-effect transistor with a self-aligne...
- Patent number 4,784,967
- Issue date Nov 15, 1988
- American Telephone and Telegraph Company, AT&T Bell Laboratories
- John E. Cunningham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor having a delta-doped ohmic contact
- Patent number 4,780,748
- Issue date Oct 25, 1988
- American Telephone and Telegraph Company, AT&T Bell Laboratories
- John E. Cunningham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Delta-doped ohmic metal to semiconductor contacts
- Patent number 4,772,934
- Issue date Sep 20, 1988
- American Telephone and Telegraph Company, AT&T Bell Laboratories
- John E. Cunningham
- H01 - BASIC ELECTRIC ELEMENTS

Erdmann Frederick Schubert

Person

Patents Grantslast 30 patents

Fixture and method for laser fabrication by in-situ cleaving of sem...

Gallium oxide coatings for optoelectronic devices using electron be...

Electron beam deposition of gallium oxide thin films using a single...

Single mirror light-emitting diodes with enhanced intensity

Absorption resonant rare earth-doped micro-cavities

Photodetector with a resonant cavity

P-N junction devices with group IV element-doped group III-V compou...

Erbium doped optical devices

Light emitting diode

Devices having repetitive layers

Optical devices with electron-beam evaporated multilayer mirror

Elimination of heterojunction band discontinuities

Vertical cavity surface emmitting lasers with transparent electrodes

Vertical cavity surface emitting lasers with electrically conductin...

Devices having asymmetric delta-doping

Doping procedures for semiconductor devices

Vertical cavity semiconductor lasers

Optical system including wavelength-tunable semiconductor laser

Devices having asymmetric delta-doping

Optical communications modulator device

Method for fabricating a field-effect transistor with a self-aligne...

Field-effect transistor having a delta-doped ohmic contact

Delta-doped ohmic metal to semiconductor contacts