ERH-KUN LAI

Person

ELMSFORD, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
3D virtual ground memory and manufacturing methods for same
- Patent number 11,916,011
- Issue date Feb 27, 2024
- Macronix International Co., Ltd.
- Erh-Kun Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D memory with confined cell
- Patent number 11,751,407
- Issue date Sep 5, 2023
- Macronix International Co., Ltd.
- Erh-Kun Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
Array of pillars located in a uniform pattern
- Patent number 11,424,260
- Issue date Aug 23, 2022
- Macronix International Co., Ltd.
- Erh-Kun Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layer cost scalable 3D phase change cross-point memory
- Patent number 10,950,786
- Issue date Mar 16, 2021
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D memory with confined cell
- Patent number 10,937,832
- Issue date Mar 2, 2021
- Macronix International Co., Ltd.
- Erh-Kun Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bit cost scalable 3D phase change cross-point memory
- Patent number 10,818,729
- Issue date Oct 27, 2020
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing word line capacitance in 3D memory
- Patent number 10,636,812
- Issue date Apr 28, 2020
- Macronix International Co., Ltd.
- Erh-Kun Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned 3D memory with confined cell
- Patent number 10,593,875
- Issue date Mar 17, 2020
- Macronix International Co., Ltd.
- Erh-Kun Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned di-silicon silicide bit line and source line landing p...
- Patent number 10,515,810
- Issue date Dec 24, 2019
- Macronix International Co., Ltd.
- Erh-Kun Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance vertical channel 3D memory
- Patent number 10,453,856
- Issue date Oct 22, 2019
- Macronix International Co., Ltd.
- Erh-Kun Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon on insulator and thin film transistor bandgap engineered sp...
- Patent number RE47311
- Issue date Mar 19, 2019
- Macronix International Co., Ltd.
- Hang-Ting Lue
Information Patent Grant
Method for manufacturing 3D NAND memory using gate replacement, and...
- Patent number 10,043,819
- Issue date Aug 7, 2018
- Macronix International Co., Ltd.
- Erh-Kun Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
Damascene process of RRAM top electrodes
- Patent number 9,425,391
- Issue date Aug 23, 2016
- Macronix International Co., Ltd.
- Erh-Kun Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damascene conductor for 3D array
- Patent number 9,123,778
- Issue date Sep 1, 2015
- Macronix International Co., Ltd.
- Erh-Kun Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate connection of three dimensional NAND for improving erase...
- Patent number 9,117,526
- Issue date Aug 25, 2015
- Macronix International Co., Ltd.
- Erh-Kun Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for forming resistance random access memory structure
- Patent number 9,076,964
- Issue date Jul 7, 2015
- Macronix International Co., Ltd.
- ChiaHua Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric charge trapping memory cells with redundancy
- Patent number 9,019,771
- Issue date Apr 28, 2015
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE
Information Patent Grant
Low temperature transition metal oxide for memory device
- Patent number 8,962,466
- Issue date Feb 24, 2015
- Macronix International Co., Ltd.
- Feng-Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon pillar bipolar transistor with self-aligned memory element
- Patent number 8,933,536
- Issue date Jan 13, 2015
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D memory array including crystallized channels
- Patent number 8,933,457
- Issue date Jan 13, 2015
- Macronix International Co., Ltd.
- Erh-Kun Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell access device having a pn-junction with polycrystalline...
- Patent number 8,907,316
- Issue date Dec 9, 2014
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE
Information Patent Grant
Graded metal oxide resistance based semiconductor memory device
- Patent number 8,772,106
- Issue date Jul 8, 2014
- Macronix International Co., Ltd.
- Ming-Daou Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device manufacturing method with memory element having a met...
- Patent number 8,697,487
- Issue date Apr 15, 2014
- Macronix International Co., Ltd.
- ChiaHua Ho
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory cell access device having a pn-junction with polycrystalline...
- Patent number 8,664,689
- Issue date Mar 4, 2014
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilevel-cell memory structures employing multi-memory layers wit...
- Patent number 8,597,976
- Issue date Dec 3, 2013
- Macronix International Co., Ltd.
- ChiaHua Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistance random access memory structure for enhanced retention
- Patent number 8,587,983
- Issue date Nov 19, 2013
- Macronix International Co., Ltd.
- ChiaHua Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming memory cell access device
- Patent number 8,525,290
- Issue date Sep 3, 2013
- Macronix International Co., Ltd.
- Erh-Kun Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded metal oxide resistance based semiconductor memory device
- Patent number 8,488,362
- Issue date Jul 16, 2013
- Macronix International Co., Ltd.
- Ming-Daou Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices having an embedded resistance memory with metal-oxyg...
- Patent number 8,461,564
- Issue date Jun 11, 2013
- Macronix International Co., Ltd.
- ChiaHua Ho
- B82 - NANO-TECHNOLOGY
Information Patent Grant
3D two bit-per-cell NAND flash memory
- Patent number 8,437,192
- Issue date May 7, 2013
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
3D VIRTUAL GROUND MEMORY AND MANUFACTURING METHODS FOR SAME
- Publication number 20240153869
- Publication date May 9, 2024
- Macronix International Co., Ltd.
- Erh-Kun LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D VIRTUAL GROUND MEMORY AND MANUFACTURING METHODS FOR SAME
- Publication number 20220336347
- Publication date Oct 20, 2022
- Macronix International Co., Ltd.
- Erh-Kun LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARRAY OF PILLARS LOCATED IN A UNIFORM PATTERN
- Publication number 20210193673
- Publication date Jun 24, 2021
- Macronix International Co., Ltd.
- Erh-Kun LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D MEMORY WITH CONFINED CELL
- Publication number 20210143216
- Publication date May 13, 2021
- Macronix International Co., Ltd.
- Erh-Kun LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D MEMORY WITH CONFINED CELL
- Publication number 20190393268
- Publication date Dec 26, 2019
- Macronix International Co., Ltd.
- Erh-Kun LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED 3D MEMORY WITH CONFINED CELL
- Publication number 20190386213
- Publication date Dec 19, 2019
- Macronix International Co., Ltd.
- Erh-Kun LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYER COST SCALABLE 3D PHASE CHANGE CROSS-POINT MEMORY
- Publication number 20190355903
- Publication date Nov 21, 2019
- Macronix International Co., Ltd.
- Hsiang-Lan LUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIT COST SCALABLE 3D PHASE CHANGE CROSS-POINT MEMORY
- Publication number 20190355790
- Publication date Nov 21, 2019
- Hsiang-Lan LUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED DI-SILICON SILICIDE BIT LINE AND SOURCE LINE LANDING P...
- Publication number 20190311907
- Publication date Oct 10, 2019
- Macronix International Co., Ltd.
- Erh-Kun LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRING SELECT LINE GATE OXIDE METHOD FOR 3D VERTICAL CHANNEL NAND M...
- Publication number 20190312050
- Publication date Oct 10, 2019
- Macronix International Co., Ltd.
- Erh-Kun LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE VERTICAL CHANNEL 3D MEMORY
- Publication number 20190304985
- Publication date Oct 3, 2019
- Macronix International Co., Ltd.
- Erh-Kun LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DAMASCENE PROCESS OF RRAM TOP ELECTRODES
- Publication number 20160260898
- Publication date Sep 8, 2016
- Macronix International Co., Ltd.
- Erh-Kun LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE CONNECTION OF THREE DIMENSIONAL NAND FOR IMPROVING ERASE...
- Publication number 20150009759
- Publication date Jan 8, 2015
- Macronix International Co., Ltd.
- Erh-Kun Lai
- G11 - INFORMATION STORAGE
Information Patent Application
3D MEMORY ARRAY INCLUDING CRYSTALLIZED CHANNELS
- Publication number 20140264353
- Publication date Sep 18, 2014
- Erh-Kun Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE TRANSITION METAL OXIDE FOR MEMORY DEVICE
- Publication number 20140264232
- Publication date Sep 18, 2014
- Macronix International Co., Ltd.
- FENG-MIN LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DAMASCENE CONDUCTOR FOR 3D ARRAY
- Publication number 20140264546
- Publication date Sep 18, 2014
- MACRONIX INTENATIONAL CO., LTD.
- ERH-KUN LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC CHARGE TRAPPING MEMORY CELLS WITH REDUNDANCY
- Publication number 20140119127
- Publication date May 1, 2014
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS FOR FORMING RESISTANCE RANDOM ACCESS MEMORY STRUCTURE
- Publication number 20140073108
- Publication date Mar 13, 2014
- Macronix International Co., Ltd.
- ChiaHua Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRADED METAL OXIDE RESISTANCE BASED SEMICONDUCTOR MEMORY DEVICE
- Publication number 20130295719
- Publication date Nov 7, 2013
- Ming-Daou Lee
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE MANUFACTURING METHOD WITH MEMORY ELEMENT HAVING A MET...
- Publication number 20130260528
- Publication date Oct 3, 2013
- Macronix International Co., Ltd.
- ChiaHua Ho
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF FORMING MEMORY CELL ACCESS DEVICE
- Publication number 20120326265
- Publication date Dec 27, 2012
- International Business Machines Corporation
- Erh-Kun Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D MEMORY ARRAY ARRANGED FOR FN TUNNELING PROGRAM AND ERASE
- Publication number 20120231613
- Publication date Sep 13, 2012
- Macronix International Co., Ltd.
- HSIANG-LAN LUNG
- G11 - INFORMATION STORAGE
Information Patent Application
INJECTION METHOD WITH SCHOTTKY SOURCE/DRAIN
- Publication number 20120220111
- Publication date Aug 30, 2012
- MACRONIX INTERNATIONAL CO.,
- Yi-Hsuan Hsiao
- G11 - INFORMATION STORAGE
Information Patent Application
Cross-Point Self-Aligned Reduced Cell Size Phase Change Memory
- Publication number 20120087181
- Publication date Apr 12, 2012
- MACRONIX INTERNATIONAL CO., LTD
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE
Information Patent Application
Polysilicon Plug Bipolar Transistor For Phase Change Memory
- Publication number 20120018845
- Publication date Jan 26, 2012
- International Business Machines Corporation
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-ALIGNED BIT LINE UNDER WORD LINE MEMORY ARRAY
- Publication number 20110305074
- Publication date Dec 15, 2011
- International Business Machines Corporation
- Hsiang-Lan Lung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D TWO-BIT-PER-CELL NAND FLASH MEMORY
- Publication number 20110286283
- Publication date Nov 24, 2011
- Macronix International Co., Ltd.
- HSIANG-LAN LUNG
- G11 - INFORMATION STORAGE
Information Patent Application
STACKED NON-VOLATILE MEMORY DEVICE AND METHODS FOR FABRICATING THE...
- Publication number 20110241100
- Publication date Oct 6, 2011
- Macronix International Co., Ltd.
- Erh-Kun Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistive Memory Structure with Buffer Layer
- Publication number 20110189819
- Publication date Aug 4, 2011
- Macronix International Co., Ltd.
- Wei-Chih CHIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE STRUCTURE WITH COMPOSITE DOPING FOR PHASE CHANGE MEMORY
- Publication number 20110049456
- Publication date Mar 3, 2011
- Macronix International Co., Ltd.
- HSIANG-LAN LUNG
- H01 - BASIC ELECTRIC ELEMENTS

ERH-KUN LAI

Person

Patents Grantslast 30 patents

3D virtual ground memory and manufacturing methods for same

3D memory with confined cell

Array of pillars located in a uniform pattern

Layer cost scalable 3D phase change cross-point memory

3D memory with confined cell

Bit cost scalable 3D phase change cross-point memory

Reducing word line capacitance in 3D memory

Self-aligned 3D memory with confined cell

Self-aligned di-silicon silicide bit line and source line landing p...

Low resistance vertical channel 3D memory

Silicon on insulator and thin film transistor bandgap engineered sp...

Method for manufacturing 3D NAND memory using gate replacement, and...

Damascene process of RRAM top electrodes

Damascene conductor for 3D array

Substrate connection of three dimensional NAND for improving erase...

Methods for forming resistance random access memory structure

Dielectric charge trapping memory cells with redundancy

Low temperature transition metal oxide for memory device

Polysilicon pillar bipolar transistor with self-aligned memory element

3D memory array including crystallized channels

Memory cell access device having a pn-junction with polycrystalline...

Graded metal oxide resistance based semiconductor memory device

Memory device manufacturing method with memory element having a met...

Memory cell access device having a pn-junction with polycrystalline...

Multilevel-cell memory structures employing multi-memory layers wit...

Resistance random access memory structure for enhanced retention

Method of forming memory cell access device

Graded metal oxide resistance based semiconductor memory device

Memory devices having an embedded resistance memory with metal-oxyg...

3D two bit-per-cell NAND flash memory

Patents Applicationslast 30 patents

3D VIRTUAL GROUND MEMORY AND MANUFACTURING METHODS FOR SAME

3D VIRTUAL GROUND MEMORY AND MANUFACTURING METHODS FOR SAME

ARRAY OF PILLARS LOCATED IN A UNIFORM PATTERN

3D MEMORY WITH CONFINED CELL

3D MEMORY WITH CONFINED CELL

SELF-ALIGNED 3D MEMORY WITH CONFINED CELL

LAYER COST SCALABLE 3D PHASE CHANGE CROSS-POINT MEMORY

BIT COST SCALABLE 3D PHASE CHANGE CROSS-POINT MEMORY

SELF-ALIGNED DI-SILICON SILICIDE BIT LINE AND SOURCE LINE LANDING P...

STRING SELECT LINE GATE OXIDE METHOD FOR 3D VERTICAL CHANNEL NAND M...

LOW RESISTANCE VERTICAL CHANNEL 3D MEMORY

DAMASCENE PROCESS OF RRAM TOP ELECTRODES

SUBSTRATE CONNECTION OF THREE DIMENSIONAL NAND FOR IMPROVING ERASE...

3D MEMORY ARRAY INCLUDING CRYSTALLIZED CHANNELS

LOW TEMPERATURE TRANSITION METAL OXIDE FOR MEMORY DEVICE

DAMASCENE CONDUCTOR FOR 3D ARRAY

DIELECTRIC CHARGE TRAPPING MEMORY CELLS WITH REDUNDANCY

METHODS FOR FORMING RESISTANCE RANDOM ACCESS MEMORY STRUCTURE

GRADED METAL OXIDE RESISTANCE BASED SEMICONDUCTOR MEMORY DEVICE

MEMORY DEVICE MANUFACTURING METHOD WITH MEMORY ELEMENT HAVING A MET...

METHOD OF FORMING MEMORY CELL ACCESS DEVICE

3D MEMORY ARRAY ARRANGED FOR FN TUNNELING PROGRAM AND ERASE

INJECTION METHOD WITH SCHOTTKY SOURCE/DRAIN

Cross-Point Self-Aligned Reduced Cell Size Phase Change Memory

Polysilicon Plug Bipolar Transistor For Phase Change Memory

SELF-ALIGNED BIT LINE UNDER WORD LINE MEMORY ARRAY

3D TWO-BIT-PER-CELL NAND FLASH MEMORY

STACKED NON-VOLATILE MEMORY DEVICE AND METHODS FOR FABRICATING THE...

Resistive Memory Structure with Buffer Layer

PHASE CHANGE STRUCTURE WITH COMPOSITE DOPING FOR PHASE CHANGE MEMORY