Eric Huang

Person

Jhubei City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Circuit incorporating multiple gate stack compositions
- Patent number 10,418,361
- Issue date Sep 17, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Nien Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating multiple gate stack compositions
- Patent number 9,378,961
- Issue date Jun 28, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Nien Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming high voltage device
- Patent number 9,224,732
- Issue date Dec 29, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Chang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating multiple gate stack compositions
- Patent number 9,048,335
- Issue date Jun 2, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Nien Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage devices and methods of forming the high voltage devices
- Patent number 8,704,312
- Issue date Apr 22, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Chang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral power MOSFET with high breakdown voltage and low on-resistance
- Patent number 8,389,341
- Issue date Mar 5, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral power MOSFET with high breakdown voltage and low on-resistance
- Patent number 7,989,890
- Issue date Aug 2, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Breakdown voltages of ultra-high voltage devices by forming tunnels
- Patent number 7,960,786
- Issue date Jun 14, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Eric Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stabilizing breakdown voltages by forming tunnels for ultra-high vo...
- Patent number 7,768,071
- Issue date Aug 3, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Eric Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CIRCUIT INCORPORATING MULTIPLE GATE STACK COMPOSITIONS
- Publication number 20160372462
- Publication date Dec 22, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Nien CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Circuit Incorporating Multiple Gate Stack Compositions
- Publication number 20140246732
- Publication date Sep 4, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Nien Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING HIGH VOLTAGE DEVICE
- Publication number 20140197488
- Publication date Jul 17, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Chang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance
- Publication number 20120003803
- Publication date Jan 5, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE MOS TRANSISTOR
- Publication number 20110241114
- Publication date Oct 6, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- RU-YI SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DEVICES AND METHODS OF FORMING THE HIGH VOLTAGE DEVICES
- Publication number 20110163376
- Publication date Jul 7, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Chang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stabilizing Breakdown Voltages by Forming Tunnels for Ultra-High Vo...
- Publication number 20100006933
- Publication date Jan 14, 2010
- Eric Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Breakdown Voltages of Ultra-High Voltage Devices By Forming Tunnels
- Publication number 20100006935
- Publication date Jan 14, 2010
- Eric Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance
- Publication number 20090001462
- Publication date Jan 1, 2009
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Circuit incorporating multiple gate stack compositions

Methods of fabricating multiple gate stack compositions

Method of forming high voltage device

Method of fabricating multiple gate stack compositions

High voltage devices and methods of forming the high voltage devices

Lateral power MOSFET with high breakdown voltage and low on-resistance

Lateral power MOSFET with high breakdown voltage and low on-resistance

Breakdown voltages of ultra-high voltage devices by forming tunnels

Stabilizing breakdown voltages by forming tunnels for ultra-high vo...

Patents Applicationslast 30 patents

CIRCUIT INCORPORATING MULTIPLE GATE STACK COMPOSITIONS

Circuit Incorporating Multiple Gate Stack Compositions

METHOD OF FORMING HIGH VOLTAGE DEVICE

Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance

HIGH VOLTAGE MOS TRANSISTOR

HIGH VOLTAGE DEVICES AND METHODS OF FORMING THE HIGH VOLTAGE DEVICES

Stabilizing Breakdown Voltages by Forming Tunnels for Ultra-High Vo...

Breakdown Voltages of Ultra-High Voltage Devices By Forming Tunnels

Lateral Power MOSFET with High Breakdown Voltage and Low On-Resistance