Eric R. Miller

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Nanosheet channel-to-source and drain isolation
- Patent number 12,166,110
- Issue date Dec 10, 2024
- Adeia Semiconductor Solutions LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain contact positioning under power rail
- Patent number 12,107,132
- Issue date Oct 1, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using a same mask for direct print and self-aligned double patterni...
- Patent number 12,080,559
- Issue date Sep 3, 2024
- International Business Machines Corporation
- Stuart Sieg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom source/drain etch with fin-cut-last-VTFET
- Patent number 12,021,135
- Issue date Jun 25, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local vertical interconnects for monolithic stack transistors
- Patent number 12,002,805
- Issue date Jun 4, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned uniform bottom spacers for VTFETS
- Patent number 11,973,125
- Issue date Apr 30, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Via interconnects including super vias
- Patent number 11,916,013
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the semiconductor device
- Patent number 11,869,937
- Issue date Jan 9, 2024
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the semiconductor device
- Patent number 11,869,936
- Issue date Jan 9, 2024
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano multilayer carbon-rich low-k spacer
- Patent number 11,791,398
- Issue date Oct 17, 2023
- International Business Machines Corporation
- Donald Canaperi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid diffusion break with EUV gate patterning
- Patent number 11,710,768
- Issue date Jul 25, 2023
- International Business Machines Corporation
- Eric Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom source/drain etch with fin-cut-last-VTFET
- Patent number 11,695,059
- Issue date Jul 4, 2023
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Elevator analytics facilitating passenger destination prediction an...
- Patent number 11,673,766
- Issue date Jun 13, 2023
- International Business Machines Corporation
- Gauri Karve
- B66 - HOISTING LIFTING HAULING
Information Patent Grant
Nanosheet channel-to-source and drain isolation
- Patent number 11,652,161
- Issue date May 16, 2023
- TESSERA LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunneling field effect transistor with dual liner bottom s...
- Patent number 11,646,235
- Issue date May 9, 2023
- International Business Machines Corporation
- Eric Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial fin for contact self-alignment
- Patent number 11,646,358
- Issue date May 9, 2023
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate isolated VTFET devices
- Patent number 11,615,992
- Issue date Mar 28, 2023
- International Business Machines Corporation
- Eric Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrapped-around contact for vertical field effect transistor top sou...
- Patent number 11,605,717
- Issue date Mar 14, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap spacer for metal gates
- Patent number 11,557,589
- Issue date Jan 17, 2023
- Tessera, LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial wrap around top contact
- Patent number 11,521,894
- Issue date Dec 6, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sublithography gate cut physical unclonable function
- Patent number 11,462,631
- Issue date Oct 4, 2022
- International Business Machines Corporation
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Wrap-around contacts including localized metal silicide
- Patent number 11,424,367
- Issue date Aug 23, 2022
- International Business Machines Corporation
- Eric Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial fin for contact self-alignment
- Patent number 11,316,029
- Issue date Apr 26, 2022
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using a same mask for direct print and self-aligned double patterni...
- Patent number 11,257,681
- Issue date Feb 22, 2022
- International Business Machines Corporation
- Stuart Sieg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned uniform bottom spacers for VTFETS
- Patent number 11,251,287
- Issue date Feb 15, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom source/drain etch with fin-cut-last-VTFET
- Patent number 11,245,027
- Issue date Feb 8, 2022
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the semiconductor device
- Patent number 11,239,316
- Issue date Feb 1, 2022
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual width finned semiconductor structure
- Patent number 11,189,532
- Issue date Nov 30, 2021
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunneling field effect transistor with dual liner bottom s...
- Patent number 11,152,266
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Eric Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the semiconductor device
- Patent number 11,127,815
- Issue date Sep 21, 2021
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PLACEHOLDER WITH DIELECTRIC LINER PROTECTION TO PREVENT DIRECT BACK...
- Publication number 20240421085
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLEXIBLE SELF-ALIGNED POWER VIA SHAPE WITH GATE CUT FIRST
- Publication number 20240321957
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Eric Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SUBSTRATE ISOLATION (SASI) OF GATE-ALL-AROUND NANOSHEE...
- Publication number 20240290860
- Publication date Aug 29, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIDDLE OF THE LINE ARCHITECTURE WITH SUBTRACTIVE SOURCE/DRAIN CONTACT
- Publication number 20240222448
- Publication date Jul 4, 2024
- International Business Machines Corporation
- Eric Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Replacement Metal Gate Integration for Gate All Around Transistors
- Publication number 20240186401
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS
- Publication number 20240178072
- Publication date May 30, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR BACKSIDE TRANSISTOR INTEGRATION WITH BACKSIDE POWER D...
- Publication number 20240105605
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET CHANNEL-TO-SOURCE AND DRAIN ISOLATION
- Publication number 20240088268
- Publication date Mar 14, 2024
- TESSERA LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-SHARED METAL GATE INTEGRATION FOR SCALED GATE ALL AROUND (GAA)...
- Publication number 20240079276
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR LAYOUT FOR IMPROVED CELL HEIGHT SCALING
- Publication number 20240055477
- Publication date Feb 15, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STEPPED SOURCE DRAIN CONTACT FOR GATE-ALL-AROUND TRANSISTOR
- Publication number 20230411477
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED VIA-TO-BACKSIDE POWER RAIL (VBPR) FOR STACKED FIELD-EFFECT T...
- Publication number 20230369217
- Publication date Nov 16, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP SPACER FOR METAL GATES
- Publication number 20230352480
- Publication date Nov 2, 2023
- TESSERA LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATION OF SOURCE-DRAIN TRENCH METAL CUT AND GATE-CONTACT-OV...
- Publication number 20230282722
- Publication date Sep 7, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOTTOM SOURCE/DRAIN ETCH WITH FIN-CUT-LAST-VTFET
- Publication number 20230275141
- Publication date Aug 31, 2023
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT STRUCTURE INCLUDING VERTICALLY STACKED POWER AND GROUN...
- Publication number 20230238323
- Publication date Jul 27, 2023
- International Business Machines Corporation
- Christopher J. Penny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANGLED VIA FOR TIP TO TIP MARGIN IMPROVEMENT
- Publication number 20230187510
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GATE CAP FOR SELF-ALIGNED CONTACTS
- Publication number 20230187549
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL PROTECTION OF GATE-ALL-AROUND DEVICES FOR PERFORMANCE OPTIM...
- Publication number 20230178618
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Maruf Amin Bhuiyan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE CONTAINING A VIA-TO-BURIED POWER RAIL CONTACT STRUCTURE O...
- Publication number 20230139929
- Publication date May 4, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN CONTACT POSITIONING UNDER POWER RAIL
- Publication number 20230095508
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIA INTERCONNECTS INCLUDING SUPER VIAS
- Publication number 20230065078
- Publication date Mar 2, 2023
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL VERTICAL INTERCONNECTS FOR MONOLITHIC STACK TRANSISTORS
- Publication number 20230051674
- Publication date Feb 16, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET WITH DIFFERENT CHANNEL MATERIALS
- Publication number 20220406776
- Publication date Dec 22, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID DIFFUSION BREAK WITH EUV GATE PATTERNING
- Publication number 20220384568
- Publication date Dec 1, 2022
- International Business Machines Corporation
- Eric Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SACRIFICIAL FIN FOR CONTACT SELF-ALIGNMENT
- Publication number 20220262923
- Publication date Aug 18, 2022
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAPPED-AROUND CONTACT FOR VERTICAL FIELD EFFECT TRANSISTOR TOP SOU...
- Publication number 20220199785
- Publication date Jun 23, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAP-AROUND CONTACTS INCLUDING LOCALIZED METAL SILICIDE
- Publication number 20220190161
- Publication date Jun 16, 2022
- International Business Machines Corporation
- Eric Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED UNIFORM BOTTOM SPACERS FOR VTFETS
- Publication number 20220149179
- Publication date May 12, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE
- Publication number 20220140074
- Publication date May 5, 2022
- International Business Machines Corporation
- Marc Adam Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS

Eric R. Miller

Person

Patents Grantslast 30 patents

Nanosheet channel-to-source and drain isolation

Source/drain contact positioning under power rail

Using a same mask for direct print and self-aligned double patterni...

Bottom source/drain etch with fin-cut-last-VTFET

Local vertical interconnects for monolithic stack transistors

Self-aligned uniform bottom spacers for VTFETS

Via interconnects including super vias

Semiconductor device and method of forming the semiconductor device

Semiconductor device and method of forming the semiconductor device

Nano multilayer carbon-rich low-k spacer

Hybrid diffusion break with EUV gate patterning

Bottom source/drain etch with fin-cut-last-VTFET

Elevator analytics facilitating passenger destination prediction an...

Nanosheet channel-to-source and drain isolation

Vertical tunneling field effect transistor with dual liner bottom s...

Sacrificial fin for contact self-alignment

Substrate isolated VTFET devices

Wrapped-around contact for vertical field effect transistor top sou...

Air gap spacer for metal gates

Partial wrap around top contact

Sublithography gate cut physical unclonable function

Wrap-around contacts including localized metal silicide

Sacrificial fin for contact self-alignment

Using a same mask for direct print and self-aligned double patterni...

Self-aligned uniform bottom spacers for VTFETS

Bottom source/drain etch with fin-cut-last-VTFET

Semiconductor device and method of forming the semiconductor device

Dual width finned semiconductor structure

Vertical tunneling field effect transistor with dual liner bottom s...

Semiconductor device and method of forming the semiconductor device

Patents Applicationslast 30 patents

PLACEHOLDER WITH DIELECTRIC LINER PROTECTION TO PREVENT DIRECT BACK...

FLEXIBLE SELF-ALIGNED POWER VIA SHAPE WITH GATE CUT FIRST

SELF-ALIGNED SUBSTRATE ISOLATION (SASI) OF GATE-ALL-AROUND NANOSHEE...

MIDDLE OF THE LINE ARCHITECTURE WITH SUBTRACTIVE SOURCE/DRAIN CONTACT

Replacement Metal Gate Integration for Gate All Around Transistors

NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS

SEMICONDUCTOR BACKSIDE TRANSISTOR INTEGRATION WITH BACKSIDE POWER D...

NANOSHEET CHANNEL-TO-SOURCE AND DRAIN ISOLATION

NON-SHARED METAL GATE INTEGRATION FOR SCALED GATE ALL AROUND (GAA)...

STACKED TRANSISTOR LAYOUT FOR IMPROVED CELL HEIGHT SCALING

STEPPED SOURCE DRAIN CONTACT FOR GATE-ALL-AROUND TRANSISTOR

BURIED VIA-TO-BACKSIDE POWER RAIL (VBPR) FOR STACKED FIELD-EFFECT T...

AIR GAP SPACER FOR METAL GATES

CO-INTEGRATION OF SOURCE-DRAIN TRENCH METAL CUT AND GATE-CONTACT-OV...

BOTTOM SOURCE/DRAIN ETCH WITH FIN-CUT-LAST-VTFET

INTERCONNECT STRUCTURE INCLUDING VERTICALLY STACKED POWER AND GROUN...

ANGLED VIA FOR TIP TO TIP MARGIN IMPROVEMENT

SELECTIVE GATE CAP FOR SELF-ALIGNED CONTACTS

CHANNEL PROTECTION OF GATE-ALL-AROUND DEVICES FOR PERFORMANCE OPTIM...

STRUCTURE CONTAINING A VIA-TO-BURIED POWER RAIL CONTACT STRUCTURE O...

SOURCE/DRAIN CONTACT POSITIONING UNDER POWER RAIL

VIA INTERCONNECTS INCLUDING SUPER VIAS

LOCAL VERTICAL INTERCONNECTS FOR MONOLITHIC STACK TRANSISTORS

STACKED FET WITH DIFFERENT CHANNEL MATERIALS

HYBRID DIFFUSION BREAK WITH EUV GATE PATTERNING

SACRIFICIAL FIN FOR CONTACT SELF-ALIGNMENT

WRAPPED-AROUND CONTACT FOR VERTICAL FIELD EFFECT TRANSISTOR TOP SOU...

WRAP-AROUND CONTACTS INCLUDING LOCALIZED METAL SILICIDE

SELF-ALIGNED UNIFORM BOTTOM SPACERS FOR VTFETS

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE