Eric Raymond EVARTS

Person

Niskayuna, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Analog persistent circuit for storage access monitoring
- Patent number 12,153,821
- Issue date Nov 26, 2024
- International Business Machines Corporation
- Krishna Thangaraj
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Selectively biasing magnetoresistive random-access memory cells
- Patent number 11,942,126
- Issue date Mar 26, 2024
- International Business Machines Corporation
- Michael Rizzolo
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbit-torque magnetoresistive random-access memory
- Patent number 11,793,001
- Issue date Oct 17, 2023
- International Business Machines Corporation
- Eric Raymond Evarts
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM containing magnetic top contact
- Patent number 11,665,974
- Issue date May 30, 2023
- International Business Machines Corporation
- Michael Rizzolo
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-bit magnetoresistive random-access memory cell
- Patent number 11,514,962
- Issue date Nov 29, 2022
- International Business Machines Corporation
- Karthik Yogendra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-bit magnetoresistive random-access memory device architecture
- Patent number 11,437,083
- Issue date Sep 6, 2022
- International Business Machines Corporation
- Ashim Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive random-access memory device including magnetic tun...
- Patent number 11,335,850
- Issue date May 17, 2022
- International Business Machines Corporation
- Karthik Yogendra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayered magnetic free layer structure in magnetic tunnel junct...
- Patent number 11,226,252
- Issue date Jan 18, 2022
- International Business Machines Corporation
- Virat Vasav Mehta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosecond non-destructively erasable magnetoresistive random-acces...
- Patent number 11,114,146
- Issue date Sep 7, 2021
- International Business Machines Corporation
- Alexander Reznicek
- G11 - INFORMATION STORAGE
Information Patent Grant
Nanoscale magnetic tunnel junction arrays for sub-micrometer resolu...
- Patent number 10,942,072
- Issue date Mar 9, 2021
- International Business Machines Corporation
- Chandrasekharan Kothandaraman
- G01 - MEASURING TESTING
Information Patent Grant
Magnetoresistive random access memory thin film transistor unit cell
- Patent number 10,727,273
- Issue date Jul 28, 2020
- International Business Machines Corporation
- Praveen Joseph
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-CORRECTED THRESHOLD VOLTAGES IN NON-VOLATILE MEMORY
- Publication number 20240304261
- Publication date Sep 12, 2024
- International Business Machines Corporation
- Krishna Thangaraj
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH DATA SCRUBBING
- Publication number 20240087630
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Heng Wu
- G11 - INFORMATION STORAGE
Information Patent Application
ANALOG PERSISTENT CIRCUIT FOR STORAGE ACCESS MONITORING
- Publication number 20230418504
- Publication date Dec 28, 2023
- International Business Machines Corporation
- Krishna Thangaraj
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM-ACCESS MEMORY
- Publication number 20230046923
- Publication date Feb 16, 2023
- International Business Machines Corporation
- Eric Raymond Evarts
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTIVELY BIASING MAGNETORESISTIVE RANDOM-ACCESS MEMORY CELLS
- Publication number 20220383921
- Publication date Dec 1, 2022
- International Business Machines Corporation
- Michael Rizzolo
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-BIT MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICE ARCHITECTURE
- Publication number 20220254396
- Publication date Aug 11, 2022
- International Business Machines Corporation
- Ashim Dutta
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM CONTAINING MAGNETIC TOP CONTACT
- Publication number 20220238794
- Publication date Jul 28, 2022
- International Business Machines Corporation
- Michael Rizzolo
- G11 - INFORMATION STORAGE
Information Patent Application
EXTERNAL MAGNETIC BOTTOM CONTACT STRUCTURE FOR MRAM
- Publication number 20220180911
- Publication date Jun 9, 2022
- International Business Machines Corporation
- Saba Zare
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-BIT MAGNETORESISTIVE RANDOM-ACCESS MEMORY CELL
- Publication number 20220148635
- Publication date May 12, 2022
- International Business Machines Corporation
- Karthik Yogendra
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICE INCLUDING MAGNETIC TUN...
- Publication number 20210288242
- Publication date Sep 16, 2021
- International Business Machines Corporation
- Karthik Yogendra
- G11 - INFORMATION STORAGE
Information Patent Application
NANOSECOND NON-DESTRUCTIVELY ERASABLE MAGNETORESISTIVE RANDOM-ACCES...
- Publication number 20210158850
- Publication date May 27, 2021
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYERED MAGNETIC FREE LAYER STRUCTURE IN MAGNETIC TUNNEL JUNCT...
- Publication number 20200217735
- Publication date Jul 9, 2020
- International Business Machines Corporation
- Virat Vasav Mehta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSCALE MAGNETIC TUNNEL JUNCTION ARRAYS FOR SUB-MICROMETER RESOLU...
- Publication number 20200158582
- Publication date May 21, 2020
- International Business Machines Corporation
- Chandrasekharan Kothandaraman
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY THIN FILM TRANSISTOR UNIT CELL
- Publication number 20200119093
- Publication date Apr 16, 2020
- International Business Machines Corporation
- Praveen JOSEPH
- H01 - BASIC ELECTRIC ELEMENTS

Eric Raymond EVARTS

Person

Patents Grantslast 30 patents

Analog persistent circuit for storage access monitoring

Selectively biasing magnetoresistive random-access memory cells

Spin-orbit-torque magnetoresistive random-access memory

MRAM containing magnetic top contact

Two-bit magnetoresistive random-access memory cell

Two-bit magnetoresistive random-access memory device architecture

Magnetoresistive random-access memory device including magnetic tun...

Multilayered magnetic free layer structure in magnetic tunnel junct...

Nanosecond non-destructively erasable magnetoresistive random-acces...

Nanoscale magnetic tunnel junction arrays for sub-micrometer resolu...

Magnetoresistive random access memory thin film transistor unit cell

Patents Applicationslast 30 patents

SELF-CORRECTED THRESHOLD VOLTAGES IN NON-VOLATILE MEMORY

MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH DATA SCRUBBING

ANALOG PERSISTENT CIRCUIT FOR STORAGE ACCESS MONITORING

SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM-ACCESS MEMORY

SELECTIVELY BIASING MAGNETORESISTIVE RANDOM-ACCESS MEMORY CELLS

TWO-BIT MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICE ARCHITECTURE

MRAM CONTAINING MAGNETIC TOP CONTACT

EXTERNAL MAGNETIC BOTTOM CONTACT STRUCTURE FOR MRAM

TWO-BIT MAGNETORESISTIVE RANDOM-ACCESS MEMORY CELL

MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICE INCLUDING MAGNETIC TUN...

NANOSECOND NON-DESTRUCTIVELY ERASABLE MAGNETORESISTIVE RANDOM-ACCES...

MULTILAYERED MAGNETIC FREE LAYER STRUCTURE IN MAGNETIC TUNNEL JUNCT...

NANOSCALE MAGNETIC TUNNEL JUNCTION ARRAYS FOR SUB-MICROMETER RESOLU...

MAGNETORESISTIVE RANDOM ACCESS MEMORY THIN FILM TRANSISTOR UNIT CELL