Eric S. Kozarsky

Person

Ballston Spa, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Carbon implantation for thicker gate silicide
- Patent number 12,020,937
- Issue date Jun 25, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with shared well
- Patent number 11,798,948
- Issue date Oct 24, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Kaustubh Shanbhag
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Combined SADP fins for semiconductor devices and methods of making...
- Patent number 9,691,775
- Issue date Jun 27, 2017
- GLOBALFOUNDRIES Inc.
- Nicholas Vincent Licausi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor (FinFET) device with a planar block area to...
- Patent number 9,236,269
- Issue date Jan 12, 2016
- GLOBALFOUNDRIES Inc.
- Eric S. Kozarsky
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING DIFFUSION BREAK STRUCTURE AND METHOD...
- Publication number 20240429237
- Publication date Dec 26, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anton TOKRANOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ISOLATION REGION INCLUDING COMBINATION...
- Publication number 20240313113
- Publication date Sep 19, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anton V. Tokranov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH ISOLATION STRUCTURES IN ACTIVE REGIONS
- Publication number 20240234425
- Publication date Jul 11, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Tamilmani ETHIRAJAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON IMPLANTATION FOR THICKER GATE SILICIDE
- Publication number 20230307238
- Publication date Sep 28, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH SHARED WELL
- Publication number 20230112377
- Publication date Apr 13, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Kaustubh Shanbhag
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR (FINFET) DEVICE WITH A PLANAR BLOCK AREA TO...
- Publication number 20150311085
- Publication date Oct 29, 2015
- GLOBALFOUNDRIES INC.
- Eric S. Kozarsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENLARGED FIN TIP PROFILE FOR FINS OF A FIELD EFFECT TRANSISTOR (FIN...
- Publication number 20150076654
- Publication date Mar 19, 2015
- GLOBAL FOUNDRIES Inc.
- Michael Ganz
- H01 - BASIC ELECTRIC ELEMENTS

Eric S. Kozarsky

Person

Patents Grantslast 30 patents

Carbon implantation for thicker gate silicide

Semiconductor structure with shared well

Combined SADP fins for semiconductor devices and methods of making...

Field effect transistor (FinFET) device with a planar block area to...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE INCLUDING DIFFUSION BREAK STRUCTURE AND METHOD...

SEMICONDUCTOR STRUCTURE WITH ISOLATION REGION INCLUDING COMBINATION...

DEVICE WITH ISOLATION STRUCTURES IN ACTIVE REGIONS

CARBON IMPLANTATION FOR THICKER GATE SILICIDE

SEMICONDUCTOR STRUCTURE WITH SHARED WELL

FIELD EFFECT TRANSISTOR (FINFET) DEVICE WITH A PLANAR BLOCK AREA TO...

ENLARGED FIN TIP PROFILE FOR FINS OF A FIELD EFFECT TRANSISTOR (FIN...