Erich Griebl

Person

Dorfen, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor device with p-contact and doped insulation bloc...
- Patent number 11,949,006
- Issue date Apr 2, 2024
- Infineon Technologies Dresden GmbH & Co. KG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having elevated source regions and reces...
- Patent number 11,888,061
- Issue date Jan 30, 2024
- Infineon Technologies Dresden GmbH & Co. KG
- Erich Griebl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor switch having a cross-trench structure
- Patent number 11,610,986
- Issue date Mar 21, 2023
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor switch having a cross-trench structure
- Patent number 11,581,429
- Issue date Feb 14, 2023
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for processing a semiconductor wafer, semiconductor composit...
- Patent number 11,515,264
- Issue date Nov 29, 2022
- Infineon Technologies AG
- Francisco Javier Santos Rodriguez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RC IGBT
- Patent number 11,469,317
- Issue date Oct 11, 2022
- Infineon Technologies Austria AG
- Frank Dieter Pfirsch
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of forming a power semiconductor device
- Patent number 11,257,946
- Issue date Feb 22, 2022
- Infineon Technologies Dresden GmbH & Co. KG
- Erich Griebl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having a cross-trench arrangement
- Patent number 11,075,290
- Issue date Jul 27, 2021
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with reliably verifiable p-contact and m...
- Patent number 11,018,051
- Issue date May 25, 2021
- Infineon Technologies Dresden GmbH & Co. KG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor switch with improved controllability
- Patent number 11,011,629
- Issue date May 18, 2021
- Infineon Technologies Dresden GmbH & Co. KG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with cell trench structures and recessed conta...
- Patent number 10,629,676
- Issue date Apr 21, 2020
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage termination structure of a power semiconductor device
- Patent number 10,600,862
- Issue date Mar 24, 2020
- Infineon Technologies Austria AG
- Erich Griebl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method for testing a semiconductor device and...
- Patent number 10,424,645
- Issue date Sep 24, 2019
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with dV/dt controllability and cross-tre...
- Patent number 10,304,952
- Issue date May 28, 2019
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,177,248
- Issue date Jan 8, 2019
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with rear-side insert structure
- Patent number 9,997,359
- Issue date Jun 12, 2018
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor comprising negative temperature c...
- Patent number 9,825,023
- Issue date Nov 21, 2017
- Infineon Technologies Austria AG
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with cell trench structures and contacts and m...
- Patent number 9,666,663
- Issue date May 30, 2017
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a rear-side i...
- Patent number 9,640,401
- Issue date May 2, 2017
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for processing a substrate and a method of process screening...
- Patent number 9,406,572
- Issue date Aug 2, 2016
- Infineon Technologies AG
- Rudolf Zelsacher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with insert structure at a rear side and metho...
- Patent number 9,385,222
- Issue date Jul 5, 2016
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination structure with trench isolation regions
- Patent number 9,224,806
- Issue date Dec 29, 2015
- Infineon Technologies AG
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor including emitter short regions
- Patent number 9,111,989
- Issue date Aug 18, 2015
- Infineon Technologies Austria AG
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chip package and a method for manufacturing a chip package
- Patent number 8,815,647
- Issue date Aug 26, 2014
- Infineon Technologies AG
- Ralf Otremba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor modules and methods of formation thereof
- Patent number 8,766,430
- Issue date Jul 1, 2014
- Infineon Technologies AG
- Ralf Otremba
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Semiconductor device
- Patent number 7,821,141
- Issue date Oct 26, 2010
- Infineon Technologies AG
- Wae Chet Yong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Package for electronic device
- Patent number D609191
- Issue date Feb 2, 2010
- Infineon Technologies AG
- Mario Feldvoss
- D13 - Equipment for production, distribution, or transformation of energy
Information Patent Grant
IGBT with monolithic integrated antiparallel diode
- Patent number 7,112,868
- Issue date Sep 26, 2006
- Infineon Technologies AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection configuration for schottky diode
- Patent number 6,714,397
- Issue date Mar 30, 2004
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for Processing a Semiconductor Wafer and Semiconductor Compo...
- Publication number 20220359428
- Publication date Nov 10, 2022
- Francisco Javier Santos Rodriguez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device
- Publication number 20220140135
- Publication date May 5, 2022
- Erich Griebl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Switch Having a Cross-Trench Structure
- Publication number 20210313460
- Publication date Oct 7, 2021
- INFINEON TECHNOLOGIES AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC IGBT
- Publication number 20210296479
- Publication date Sep 23, 2021
- Frank Dieter Pfirsch
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Power Semiconductor Device with p-contact
- Publication number 20210272843
- Publication date Sep 2, 2021
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device and Method of Forming a Power Semiconduc...
- Publication number 20200235235
- Publication date Jul 23, 2020
- Erich Griebl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Stripe-Shaped Cell Trench Structures and...
- Publication number 20200227518
- Publication date Jul 16, 2020
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Switch with Improved Controllability
- Publication number 20200168727
- Publication date May 28, 2020
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with Reliably Verifiable p-contact and M...
- Publication number 20200066579
- Publication date Feb 27, 2020
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Processing a Semiconductor Wafer, Semiconductor Composit...
- Publication number 20190363057
- Publication date Nov 28, 2019
- Francisco Javier Santos Rodriguez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having a Cross-Trench Arrangement
- Publication number 20190273155
- Publication date Sep 5, 2019
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Cell Trench Structures and Recessed Conta...
- Publication number 20180366541
- Publication date Dec 20, 2018
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with dV/dt Controllability and Cross-Tre...
- Publication number 20180342605
- Publication date Nov 29, 2018
- INFINEON TECHNOLOGIES AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Termination Structure of a Power Semiconductor Device
- Publication number 20180114830
- Publication date Apr 26, 2018
- Infineon Technologies Austria AG
- Erich Griebl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20180083132
- Publication date Mar 22, 2018
- INFINEON TECHNOLOGIES AUSTRIA AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device, Method for Testing a Semiconductor Device and...
- Publication number 20180033705
- Publication date Feb 1, 2018
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- G01 - MEASURING TESTING
Information Patent Application
Semiconductor Device with Cell Trench Structures and Contacts and M...
- Publication number 20170243969
- Publication date Aug 24, 2017
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device Having a Rear-Side I...
- Publication number 20160300719
- Publication date Oct 13, 2016
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Rear-Side Insert Structure
- Publication number 20160300937
- Publication date Oct 13, 2016
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROCESSING A SUBSTRATE AND A METHOD OF PROCESS SCREENING...
- Publication number 20160126149
- Publication date May 5, 2016
- INFINEON TECHNOLOGIES AG
- Rudolf Zelsacher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated Gate Bipolar Transistor Comprising Negative Temperature C...
- Publication number 20160111415
- Publication date Apr 21, 2016
- INFINEON TECHNOLOGIES AG
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Insert Structure at a Rear Side and Metho...
- Publication number 20150236142
- Publication date Aug 20, 2015
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Edge Termination Structure with Trench Isolation Regions
- Publication number 20150041946
- Publication date Feb 12, 2015
- INFINEON TECHNOLOGIES AG
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Cell Trench Structures and Contacts and M...
- Publication number 20150041962
- Publication date Feb 12, 2015
- INFINEON TECHNOLOGIES AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated Gate Bipolar Transistor Including Emitter Short Regions
- Publication number 20140291724
- Publication date Oct 2, 2014
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHIP PACKAGE AND A METHOD FOR MANUFACTURING A CHIP PACKAGE
- Publication number 20140061669
- Publication date Mar 6, 2014
- INFINEON TECHNOLOGIES AG
- Ralf Otremba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Modules and Methods of Formation Thereof
- Publication number 20130334677
- Publication date Dec 19, 2013
- INFINEON TECHNOLOGIES AG
- Ralf Otremba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20090212417
- Publication date Aug 27, 2009
- Wae Chet Yong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with monolithic integrated antiparallel diode
- Publication number 20040144992
- Publication date Jul 29, 2004
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Protection configuration for schottky diode
- Publication number 20030035259
- Publication date Feb 20, 2003
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS

Erich Griebl

Person

Patents Grantslast 30 patents

Power semiconductor device with p-contact and doped insulation bloc...

Power semiconductor device having elevated source regions and reces...

Power semiconductor switch having a cross-trench structure

Power semiconductor switch having a cross-trench structure

Method for processing a semiconductor wafer, semiconductor composit...

RC IGBT

Method of forming a power semiconductor device

Power semiconductor device having a cross-trench arrangement

Power semiconductor device with reliably verifiable p-contact and m...

Power semiconductor switch with improved controllability

Semiconductor device with cell trench structures and recessed conta...

High voltage termination structure of a power semiconductor device

Semiconductor device, method for testing a semiconductor device and...

Power semiconductor device with dV/dt controllability and cross-tre...

Semiconductor device

Semiconductor device with rear-side insert structure

Insulated gate bipolar transistor comprising negative temperature c...

Semiconductor device with cell trench structures and contacts and m...

Method of manufacturing a semiconductor device having a rear-side i...

Method for processing a substrate and a method of process screening...

Semiconductor device with insert structure at a rear side and metho...

Edge termination structure with trench isolation regions

Insulated gate bipolar transistor including emitter short regions

Chip package and a method for manufacturing a chip package

Semiconductor modules and methods of formation thereof

Semiconductor device

Package for electronic device

IGBT with monolithic integrated antiparallel diode

Protection configuration for schottky diode

Patents Applicationslast 30 patents

Method for Processing a Semiconductor Wafer and Semiconductor Compo...

Power Semiconductor Device

Power Semiconductor Switch Having a Cross-Trench Structure

RC IGBT

Power Semiconductor Device with p-contact

Power Semiconductor Device and Method of Forming a Power Semiconduc...

Semiconductor Device with Stripe-Shaped Cell Trench Structures and...

Power Semiconductor Switch with Improved Controllability

Power Semiconductor Device with Reliably Verifiable p-contact and M...

Method for Processing a Semiconductor Wafer, Semiconductor Composit...

Power Semiconductor Device Having a Cross-Trench Arrangement

Semiconductor Device with Cell Trench Structures and Recessed Conta...

Power Semiconductor Device with dV/dt Controllability and Cross-Tre...

High Voltage Termination Structure of a Power Semiconductor Device

Semiconductor Device

Semiconductor Device, Method for Testing a Semiconductor Device and...

Semiconductor Device with Cell Trench Structures and Contacts and M...

Method of Manufacturing a Semiconductor Device Having a Rear-Side I...

Semiconductor Device with Rear-Side Insert Structure

METHOD FOR PROCESSING A SUBSTRATE AND A METHOD OF PROCESS SCREENING...

Insulated Gate Bipolar Transistor Comprising Negative Temperature C...

Semiconductor Device with Insert Structure at a Rear Side and Metho...

Edge Termination Structure with Trench Isolation Regions

Semiconductor Device with Cell Trench Structures and Contacts and M...

Insulated Gate Bipolar Transistor Including Emitter Short Regions

CHIP PACKAGE AND A METHOD FOR MANUFACTURING A CHIP PACKAGE

Semiconductor Modules and Methods of Formation Thereof

Semiconductor Device

IGBT with monolithic integrated antiparallel diode

Protection configuration for schottky diode