Erik Janzen

Person

Borensberg, SE

People

Patents Grantslast 30 patents

Information Patent Grant
Device and method for producing single crystals by vapor deposition
- Patent number 7,361,222
- Issue date Apr 22, 2008
- Norstel AB
- Erik Janzén
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
High resistivity silicon carbide single crystal
- Patent number 7,018,597
- Issue date Mar 28, 2006
- Norstel AB
- Alexandre Ellison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for introduction of an impurity dopant in SiC, a semiconduct...
- Patent number 6,096,627
- Issue date Aug 1, 2000
- ABB Research Ltd.
- Christopher Harris
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device for epitaxially growing objects
- Patent number 6,048,398
- Issue date Apr 11, 2000
- ABB Research Ltd.
- Asko Erkki Vehanen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device for epitaxially growing objects and method for such a growth
- Patent number 6,039,812
- Issue date Mar 21, 2000
- ABB Research Ltd.
- Alex Ellison
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device and a method for epitaxially growing objects by CVD
- Patent number 6,030,661
- Issue date Feb 29, 2000
- ABB Research Ltd.
- Olle Kordina
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device having an insulated gate
- Patent number 5,900,648
- Issue date May 4, 1999
- ABB Research Ltd.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for introduction of an impurity dopant in SiC, a semiconduct...
- Patent number 5,851,908
- Issue date Dec 22, 1998
- ABB Research Ltd.
- Christopher Harris
- C30 - CRYSTAL GROWTH
Information Patent Grant
IGBT having a vertical channel
- Patent number 5,831,292
- Issue date Nov 3, 1998
- ABB Research Ltd.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor device having a semiconductor...
- Patent number 5,804,482
- Issue date Sep 8, 1998
- ABB Research Ltd.
- Andrei Konstantinov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for protecting the susceptor during epitaxial growth by CVD...
- Patent number 5,792,257
- Issue date Aug 11, 1998
- ABB Research Ltd.
- Olle Kordina
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device and a method for epitaxially growing objects by CVD
- Patent number 5,704,985
- Issue date Jan 6, 1998
- ABB Research Ltd.
- Olle Kordina
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a semiconductor device having a semiconductor...
- Patent number 5,654,208
- Issue date Aug 5, 1997
- ABB Research Ltd.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a passivation layer
- Patent number 5,650,638
- Issue date Jul 22, 1997
- ABB Research Ltd.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Device and method to producing single crystals by vapour deposition
- Publication number 20080149020
- Publication date Jun 26, 2008
- NORSTEL AB
- Erik Janzen
- C30 - CRYSTAL GROWTH
Information Patent Application
Device and method for producing single crystals by vapor deposition
- Publication number 20050000406
- Publication date Jan 6, 2005
- OKMETIC OYJ
- Erik Janzen
- C30 - CRYSTAL GROWTH
Information Patent Application
High resistivity silicon carbide single crystal
- Publication number 20030079676
- Publication date May 1, 2003
- Alexandre Ellison
- C30 - CRYSTAL GROWTH

Erik Janzen

Person

Patents Grantslast 30 patents

Device and method for producing single crystals by vapor deposition

High resistivity silicon carbide single crystal

Method for introduction of an impurity dopant in SiC, a semiconduct...

Device for epitaxially growing objects

Device for epitaxially growing objects and method for such a growth

Device and a method for epitaxially growing objects by CVD

Semiconductor device having an insulated gate

Method for introduction of an impurity dopant in SiC, a semiconduct...

IGBT having a vertical channel

Method for producing a semiconductor device having a semiconductor...

Method for protecting the susceptor during epitaxial growth by CVD...

Device and a method for epitaxially growing objects by CVD

Method for producing a semiconductor device having a semiconductor...

Semiconductor device having a passivation layer

Patents Applicationslast 30 patents

Device and method to producing single crystals by vapour deposition

Device and method for producing single crystals by vapor deposition

High resistivity silicon carbide single crystal