Eugene Chen

Person

Gilbert, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic element with insulating veils and fabricating method thereof
- Patent number 6,912,107
- Issue date Jun 28, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Eugene Youjun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a magnetic element with insulating veils
- Patent number 6,835,423
- Issue date Dec 28, 2004
- FREESCALE SEMICONDUCTOR, INC.
- Eugene Youjun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating thermally stable MTJ cell and apparatus
- Patent number 6,544,801
- Issue date Apr 8, 2003
- Motorola, Inc.
- Jon Slaughter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic element with an improved magnetoresistance ratio and fabri...
- Patent number 6,469,926
- Issue date Oct 22, 2002
- Motorola, Inc.
- Eugene Youjun Chen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic element with improved field response and fabricating metho...
- Patent number 6,376,260
- Issue date Apr 23, 2002
- Motorola, Inc.
- Eugene Youjun Chen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
High density MRAM cell array
- Patent number 6,365,419
- Issue date Apr 2, 2002
- Motorola, Inc.
- Mark Durlam
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic element with improved field response and fabricating metho...
- Patent number 6,292,389
- Issue date Sep 18, 2001
- Motorola, Inc.
- Eugene Youjun Chen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of making a low resistance MTJ
- Patent number 6,261,646
- Issue date Jul 17, 2001
- Motorola, Inc.
- Eugene Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic element with dual magnetic states and fabrication method t...
- Patent number 6,233,172
- Issue date May 15, 2001
- Motorola, Inc.
- Eugene Youjun Chen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of fabricating flux concentrating layer for use with magneto...
- Patent number 6,211,090
- Issue date Apr 3, 2001
- Motorola, Inc.
- Mark Durlam
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic element with improved field response and fabricating metho...
- Patent number 6,205,052
- Issue date Mar 20, 2001
- Motorola, Inc.
- Jon Slaughter
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Low resistance MTJ
- Patent number 6,183,859
- Issue date Feb 6, 2001
- Motorola, Inc.
- Eugene Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferromagnetic GMR material and method of forming and using
- Patent number 6,177,204
- Issue date Jan 23, 2001
- Motorola, Inc.
- Eugene Chen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic random access memory and fabricating method thereof
- Patent number 6,174,737
- Issue date Jan 16, 2001
- Motorola, Inc.
- Mark Durlam
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic random access memory and fabricating method thereof
- Patent number 6,165,803
- Issue date Dec 26, 2000
- Motorola, Inc.
- Eugene Y. Chen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of fabricating a magnetic random access memory
- Patent number 6,153,443
- Issue date Nov 28, 2000
- Motorola, Inc.
- Mark Durlam
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of fabricating an MTJ with low areal resistance
- Patent number 6,083,764
- Issue date Jul 4, 2000
- Motorola, Inc.
- Eugene Chen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantum random address memory with magnetic readout and/or nano-mem...
- Patent number 6,016,269
- Issue date Jan 18, 2000
- Motorola, Inc.
- William M. Peterson
- G11 - INFORMATION STORAGE
Information Patent Grant
Low switching field magnetoresistive tunneling junction for high de...
- Patent number 5,966,323
- Issue date Oct 12, 1999
- Motorola, Inc.
- Eugene Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Low aspect ratio magnetoresistive tunneling junction
- Patent number 5,959,880
- Issue date Sep 28, 1999
- Motorola, Inc.
- Jing Shi
- G11 - INFORMATION STORAGE
Information Patent Grant
Low switching field magnetic tunneling junction for high density ar...
- Patent number 5,953,248
- Issue date Sep 14, 1999
- Motorola, Inc.
- Eugene Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory and fabricating method thereof
- Patent number 5,940,319
- Issue date Aug 17, 1999
- Motorola, Inc.
- Mark Durlam
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic random access memory having stacked memory cells and fabri...
- Patent number 5,920,500
- Issue date Jul 6, 1999
- Motorola, Inc.
- Saied N. Tehrani
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM cell requiring low switching field
- Patent number 5,917,749
- Issue date Jun 29, 1999
- Motorola, Inc.
- Eugene Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Stray magnetic shielding for a non-volatile MRAM
- Patent number 5,902,690
- Issue date May 11, 1999
- Motorola, Inc.
- Clarence J. Tracy
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory cell with increased GMR ratio
- Patent number 5,898,612
- Issue date Apr 27, 1999
- Motorola, Inc.
- Eugene Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fabricating GMR devices
- Patent number 5,861,328
- Issue date Jan 19, 1999
- Motorola, Inc.
- Saied N. Tehrani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin polarized apparatus
- Patent number 5,838,607
- Issue date Nov 17, 1998
- Motorola, Inc.
- Xiaodong T. Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
GMR device having a sense amplifier protected by a circuit for diss...
- Patent number 5,831,920
- Issue date Nov 3, 1998
- Motorola, Inc.
- Eugene Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM with high GMR ratio
- Patent number 5,828,598
- Issue date Oct 27, 1998
- Motorola, Inc.
- Eugene Chen
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Magnetic element with insulating veils and fabricating method thereof
- Publication number 20040197579
- Publication date Oct 7, 2004
- Eugene Youjun Chen
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetic element with insulating veils and fabricating method thereof
- Publication number 20030134096
- Publication date Jul 17, 2003
- Eugene Youjun Chen
- B82 - NANO-TECHNOLOGY

Eugene Chen

Person

Patents Grantslast 30 patents

Magnetic element with insulating veils and fabricating method thereof

Method of fabricating a magnetic element with insulating veils

Method of fabricating thermally stable MTJ cell and apparatus

Magnetic element with an improved magnetoresistance ratio and fabri...

Magnetic element with improved field response and fabricating metho...

High density MRAM cell array

Magnetic element with improved field response and fabricating metho...

Method of making a low resistance MTJ

Magnetic element with dual magnetic states and fabrication method t...

Method of fabricating flux concentrating layer for use with magneto...

Magnetic element with improved field response and fabricating metho...

Low resistance MTJ

Ferromagnetic GMR material and method of forming and using

Magnetic random access memory and fabricating method thereof

Magnetic random access memory and fabricating method thereof

Method of fabricating a magnetic random access memory

Method of fabricating an MTJ with low areal resistance

Quantum random address memory with magnetic readout and/or nano-mem...

Low switching field magnetoresistive tunneling junction for high de...

Low aspect ratio magnetoresistive tunneling junction

Low switching field magnetic tunneling junction for high density ar...

Magnetic random access memory and fabricating method thereof

Magnetic random access memory having stacked memory cells and fabri...

MRAM cell requiring low switching field

Stray magnetic shielding for a non-volatile MRAM

Magnetic memory cell with increased GMR ratio

Method of fabricating GMR devices

Spin polarized apparatus

GMR device having a sense amplifier protected by a circuit for diss...

MRAM with high GMR ratio

Patents Applicationslast 30 patents

Magnetic element with insulating veils and fabricating method thereof

Magnetic element with insulating veils and fabricating method thereof