EUN SUN NOH

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Yongin-si, KR

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Patents Grantslast 30 patents

Information Patent Grant
Magnetic memory device
- Patent number 10,892,400
- Issue date Jan 12, 2021
- Samsung Electronics Co., Ltd.
- Eun-sun Noh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cryogenic oxidation of metal layer of magnetic-tunnel-junction (MTJ...
- Patent number 10,847,713
- Issue date Nov 24, 2020
- Samsung Electronics Co., Ltd.
- Whan Kyun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing a magnetoresistive random access memory de...
- Patent number 9,306,156
- Issue date Apr 5, 2016
- Samsung Electronics Co., Ltd.
- Eun-Sun Noh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20200185598
- Publication date Jun 11, 2020
- Samsung Electronics Co., Ltd.
- Eun-sun Noh
- G11 - INFORMATION STORAGE
Information Patent Application
CRYOGENIC OXIDATION OF METAL LAYER OF MAGNETIC-TUNNEL-JUNCTION (MTJ...
- Publication number 20190355900
- Publication date Nov 21, 2019
- WHAN KYUN KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY DE...
- Publication number 20150236251
- Publication date Aug 20, 2015
- Eun-Sun NOH
- H01 - BASIC ELECTRIC ELEMENTS