Eungjung Yoon

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Seoul, KR

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Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating field effect transistor (FET) having wire cha...
- Patent number 7,374,986
- Issue date May 20, 2008
- Samsung Electronics Co., Ltd.
- Sungmin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor (FET) having wire channels and method of fa...
- Patent number 7,274,051
- Issue date Sep 25, 2007
- Samsung Electronics Co., Ltd.
- Sungmin Kim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of fabricating field effect transistor (FET) having wire cha...
- Publication number 20080020537
- Publication date Jan 24, 2008
- Samsung Electronics Co., Ltd.
- Sungmin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor (FET) having wire channels and method of fa...
- Publication number 20060049429
- Publication date Mar 9, 2006
- Sungmin Kim
- H01 - BASIC ELECTRIC ELEMENTS