Evgueniy N. Stefanov

Person

Vieille Toulouse, FR

People

Patents Grantslast 30 patents

Information Patent Grant
Electro-static discharge device with integrated capacitance
- Patent number 11,848,553
- Issue date Dec 19, 2023
- NXP USA, INC.
- Evgueniy Nikolov Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated capacitors in an integrated circuit
- Patent number 11,640,964
- Issue date May 2, 2023
- NXP USA, INC.
- Evgueniy Nikolov Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection device, semiconductor device that includes an ESD pr...
- Patent number 10,727,221
- Issue date Jul 28, 2020
- NXP USA, INC.
- Rouying Zhan
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Unidirectional ESD protection with buried breakdown thyristor device
- Patent number 10,629,715
- Issue date Apr 21, 2020
- NXP USA, INC.
- Evgueniy Nikolov Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device suitable for electrostatic discharge (ESD) pro...
- Patent number 10,411,004
- Issue date Sep 10, 2019
- NXP USA, INC.
- Evgueniy Nikolov Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Body-control-device for a bi-directional transistor
- Patent number 10,348,296
- Issue date Jul 9, 2019
- NXP USA, INC.
- Evgueniy Nikolov Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit arrangement for fast turn-off of bi-directional switching d...
- Patent number 10,211,822
- Issue date Feb 19, 2019
- NXP USA, INC.
- Evgueniy Nikolov Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture therefor
- Patent number 9,559,198
- Issue date Jan 31, 2017
- NXP USA, INC.
- Evgueniy Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional power transistor with shallow body trench
- Patent number 9,472,662
- Issue date Oct 18, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Evgueniy Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional trench FET with gate-based resurf
- Patent number 9,419,128
- Issue date Aug 16, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Moaniss Zitouni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional trench FET with gate-based resurf
- Patent number 9,178,027
- Issue date Nov 3, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Moaniss Zitouni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming a semiconductor device
- Patent number 8,779,465
- Issue date Jul 15, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Jean-Michel Reynes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming a semiconductor device
- Patent number 8,217,448
- Issue date Jul 10, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Evgueniy Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect semiconductor device and method of forming the same
- Patent number 8,188,539
- Issue date May 29, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Jean-Michel Reynes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device having an active area and...
- Patent number 7,955,929
- Issue date Jun 7, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Evgueniy Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Symmetrical high frequency SCR structure
- Patent number 6,989,572
- Issue date Jan 24, 2006
- Semiconductor Components Industries, LLC
- Evgueniy Nikolov Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor filter circuit and method
- Patent number 6,953,980
- Issue date Oct 11, 2005
- Semiconductor Components Industries, LLC
- Rene Escoffier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a diode for integration with a semiconductor devi...
- Patent number 6,773,977
- Issue date Aug 10, 2004
- FREESCALE SEMICONDUCTOR, INC.
- Jean-Michel Reynes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a high voltage MOSFET semiconductor device...
- Patent number 6,773,997
- Issue date Aug 10, 2004
- Semiconductor Components Industries, LLC
- Mohamed Imam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a high voltage MOSFET device with reduced...
- Patent number 6,492,679
- Issue date Dec 10, 2002
- Semiconductor Components Industries LLC
- Mohamed Imam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage metal oxide device with enhanced well region
- Patent number 6,448,625
- Issue date Sep 10, 2002
- Semiconductor Components Industries LLC
- Zia Hossain
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CAPACITORS IN AN INTEGRATED CIRCUIT
- Publication number 20220173136
- Publication date Jun 2, 2022
- Evgueniy Nikolov Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRO-STATIC DISCHARGE DEVICE WITH INTEGRATED CAPACITANCE
- Publication number 20220158444
- Publication date May 19, 2022
- NXP USA, Inc.
- Evgueniy Nikolov Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIDIRECTIONAL ESD PROTECTION WITH BURIED BREAKDOWN THYRISTOR DEVICE
- Publication number 20200013885
- Publication date Jan 9, 2020
- NXP USA, Inc.
- Evgueniy Nikolov Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD PROTECTION DEVICE, SEMICONDUCTOR DEVICE THAT INCLUDES AN ESD PR...
- Publication number 20190312026
- Publication date Oct 10, 2019
- NXP USA, Inc.
- Rouying ZHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BODY-CONTROL-DEVICE FOR A BI-DIRECTIONAL TRANSISTOR
- Publication number 20190013807
- Publication date Jan 10, 2019
- NXP USA, Inc.
- Evgueniy Nikolov STEFANOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE SUITABLE FOR ELECTROSTATIC DISCHARGE (ESD) PRO...
- Publication number 20180342496
- Publication date Nov 29, 2018
- NXP USA, Inc.
- Evgueniy Nikolov Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT ARRANGEMENT FOR FAST TURN-OFF OF BI-DIRECTIONAL SWITCHING D...
- Publication number 20170338809
- Publication date Nov 23, 2017
- NXP USA, Inc.
- Evgueniy Nikolov Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL POWER TRANSISTOR WITH SHALLOW BODY TRENCH
- Publication number 20160247916
- Publication date Aug 25, 2016
- FREESCALE SEMICONDUCTOR, INC.
- EVGUENIY STEFANOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREFOR
- Publication number 20160197176
- Publication date Jul 7, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Evgueniy Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL TRENCH FET WITH GATE-BASED RESURF
- Publication number 20160049508
- Publication date Feb 18, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Moaniss Zitouni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20100155828
- Publication date Jun 24, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Jean-Michel Reynes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING A SEMICONDUCTOR DEVICE
- Publication number 20100109078
- Publication date May 6, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Evgueniy Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING A SEMICONDUCTOR DEVICE
- Publication number 20100001344
- Publication date Jan 7, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Evgueniy Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Symmetrical high frequency SCR structure and method
- Publication number 20050006706
- Publication date Jan 13, 2005
- Semiconductor Components Industries, LLC.
- Evgueniy Nikolov Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor filter circuit and method
- Publication number 20030228848
- Publication date Dec 11, 2003
- Semiconductor Components Industries, LLC.
- Rene Escoffier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing a high voltage MOSFET semiconductor device...
- Publication number 20030027396
- Publication date Feb 6, 2003
- Semiconductor Components Industries, LLC.
- Mohamed Imam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE METAL OXIDE DEVICE WITH ENHANCED WELL REGION
- Publication number 20020137292
- Publication date Sep 26, 2002
- Semiconductor Components Industries, LLC.
- Zia Hossain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage MOS device with no field oxide over the p-top region
- Publication number 20020130360
- Publication date Sep 19, 2002
- Semiconductor Components Industries, LLC.
- Mohamed Imam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with laterally varying p-top layers
- Publication number 20020130361
- Publication date Sep 19, 2002
- Semiconductor Components Industries, LLC.
- Mohamed Imam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage metal oxide device with multiple p-regions
- Publication number 20020125530
- Publication date Sep 12, 2002
- Semiconductor Components Industries, LLC.
- Mohamed Imam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage laterally diffused metal oxide semiconductor with impr...
- Publication number 20020098637
- Publication date Jul 25, 2002
- Semiconductor Components Industries, LLC.
- Zia Hossain
- H01 - BASIC ELECTRIC ELEMENTS

Evgueniy N. Stefanov

Person

Patents Grantslast 30 patents

Electro-static discharge device with integrated capacitance

Integrated capacitors in an integrated circuit

ESD protection device, semiconductor device that includes an ESD pr...

Unidirectional ESD protection with buried breakdown thyristor device

Semiconductor device suitable for electrostatic discharge (ESD) pro...

Body-control-device for a bi-directional transistor

Circuit arrangement for fast turn-off of bi-directional switching d...

Semiconductor device and method of manufacture therefor

Bidirectional power transistor with shallow body trench

Bidirectional trench FET with gate-based resurf

Bidirectional trench FET with gate-based resurf

Semiconductor device and method of forming a semiconductor device

Semiconductor device and method of forming a semiconductor device

Field-effect semiconductor device and method of forming the same

Method of forming a semiconductor device having an active area and...

Symmetrical high frequency SCR structure

Semiconductor filter circuit and method

Method of forming a diode for integration with a semiconductor devi...

Method for manufacturing a high voltage MOSFET semiconductor device...

Method for manufacturing a high voltage MOSFET device with reduced...

High voltage metal oxide device with enhanced well region

Patents Applicationslast 30 patents

INTEGRATED CAPACITORS IN AN INTEGRATED CIRCUIT

ELECTRO-STATIC DISCHARGE DEVICE WITH INTEGRATED CAPACITANCE

UNIDIRECTIONAL ESD PROTECTION WITH BURIED BREAKDOWN THYRISTOR DEVICE

ESD PROTECTION DEVICE, SEMICONDUCTOR DEVICE THAT INCLUDES AN ESD PR...

BODY-CONTROL-DEVICE FOR A BI-DIRECTIONAL TRANSISTOR

SEMICONDUCTOR DEVICE SUITABLE FOR ELECTROSTATIC DISCHARGE (ESD) PRO...

CIRCUIT ARRANGEMENT FOR FAST TURN-OFF OF BI-DIRECTIONAL SWITCHING D...

BIDIRECTIONAL POWER TRANSISTOR WITH SHALLOW BODY TRENCH

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREFOR

BIDIRECTIONAL TRENCH FET WITH GATE-BASED RESURF

FIELD-EFFECT SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FORMING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FORMING A SEMICONDUCTOR DEVICE

Symmetrical high frequency SCR structure and method

Semiconductor filter circuit and method

Method for manufacturing a high voltage MOSFET semiconductor device...

HIGH VOLTAGE METAL OXIDE DEVICE WITH ENHANCED WELL REGION

High voltage MOS device with no field oxide over the p-top region

Semiconductor device with laterally varying p-top layers

High voltage metal oxide device with multiple p-regions

High voltage laterally diffused metal oxide semiconductor with impr...