Fa-Shen JIANG

Person

Taoyuan City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Resistive memory cell with switching layer comprising one or more d...
- Patent number 12,364,171
- Issue date Jul 15, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
Information Patent Grant
Remote plasma ultraviolet enhanced deposition
- Patent number 12,334,317
- Issue date Jun 17, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Threshold voltage-modulated memory device using variable-capacitanc...
- Patent number 12,310,036
- Issue date May 20, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
RRAM device with improved performance
- Patent number 12,295,270
- Issue date May 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
Information Patent Grant
Diffusion barrier layer in top electrode to increase break down vol...
- Patent number 12,261,197
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsing-Lien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cell having a low forming voltage
- Patent number 12,239,035
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
Information Patent Grant
Threshold voltage-modulated memory device using variable-capacitanc...
- Patent number 12,232,336
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-doped data storage structure configured to improve resistive...
- Patent number 12,232,434
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bi-Shen Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming semiconductor structure
- Patent number 12,225,834
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hsing-Lien Lin
Information Patent Grant
Integrated circuit device
- Patent number 12,218,005
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,178,147
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hai-Dang Trinh
Information Patent Grant
Top-electrode barrier layer for RRAM
- Patent number 12,114,582
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsing-Lien Lin
Information Patent Grant
Data storage structure for improving memory cell reliability
- Patent number 12,102,019
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
Information Patent Grant
Memory window of MFM MOSFET for small cell size
- Patent number 12,075,626
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage-modulated memory device using variable-capacitanc...
- Patent number 12,075,636
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,991,937
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hai-Dang Trinh
Information Patent Grant
Multilayer structure, capacitor structure and electronic device
- Patent number 11,967,611
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit design and layout with high embedded memory density
- Patent number 11,961,545
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Rram structure
- Patent number 11,963,468
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cell with switching layer comprising one or more d...
- Patent number 11,895,933
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
Information Patent Grant
Method for fabricating integrated circuit device
- Patent number 11,894,267
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage-modulated memory device using variable-capacitanc...
- Patent number 11,856,801
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing thermal dispersion layer in programmable m...
- Patent number 11,800,823
- Issue date Oct 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory window of MFM MOSFET for small cell size
- Patent number 11,723,212
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Data storage structure for improving memory cell reliability
- Patent number 11,716,913
- Issue date Aug 1, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
Information Patent Grant
Top-electrode barrier layer for RRAM
- Patent number 11,716,915
- Issue date Aug 1, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsing-Lien Lin
Information Patent Grant
Circuit design and layout with high embedded memory density
- Patent number 11,545,202
- Issue date Jan 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Diffusion barrier layer in top electrode to increase break down vol...
- Patent number 11,532,698
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsing-Lien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cell having a low forming voltage
- Patent number 11,527,717
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM structure
- Patent number 11,482,668
- Issue date Oct 25, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE WITH IMPROVED PERFORMANCE
- Publication number 20250241211
- Publication date Jul 24, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
Information Patent Application
SEMICONDUCTOR DEVICE, MEMORY STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20250228146
- Publication date Jul 10, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION BARRIER LAYER IN TOP ELECTRODE TO INCREASE BREAK DOWN VOL...
- Publication number 20250194121
- Publication date Jun 12, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsing-Lien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL HAVING A LOW FORMING VOLTAGE
- Publication number 20250176447
- Publication date May 29, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
Information Patent Application
MULTI-DOPED DATA STORAGE STRUCTURE CONFIGURED TO IMPROVE RESISTIVE...
- Publication number 20250151635
- Publication date May 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bi-Shen Lee
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE
- Publication number 20250140608
- Publication date May 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsia-Wei CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250081864
- Publication date Mar 6, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- HAI-DANG TRINH
Information Patent Application
OXYGEN AFFINITY LAYER TO IMPROVE RRAM CELL PERFORMANCE
- Publication number 20240381793
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
Information Patent Application
TOP-ELECTRODE BARRIER LAYER FOR RRAM
- Publication number 20240373763
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsing-Lien Lin
Information Patent Application
IMPROVE MEMORY WINDOW OF MFM MOSFET FOR SMALL CELL SIZE
- Publication number 20240357835
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE-MODULATED MEMORY DEVICE USING VARIABLE-CAPACITANC...
- Publication number 20240357840
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen JIANG
- G11 - INFORMATION STORAGE
Information Patent Application
RRAM STRUCTURE
- Publication number 20240224822
- Publication date Jul 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY
- Publication number 20240203472
- Publication date Jun 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20240162088
- Publication date May 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsia-Wei CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE D...
- Publication number 20240138272
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
Information Patent Application
THRESHOLD VOLTAGE-MODULATED MEMORY DEVICE USING VARIABLE-CAPACITANC...
- Publication number 20240074217
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen JIANG
- G11 - INFORMATION STORAGE
Information Patent Application
THERMAL DISPERSION LAYER IN PROGRAMMABLE METALLIZATION CELL
- Publication number 20240023464
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Application
MULTILAYER STRUCTURE, CAPACITOR STRUCTURE AND ELECTRONIC DEVICE
- Publication number 20230387190
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- HAI-DANG TRINH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE-MODULATED MEMORY DEVICE USING VARIABLE-CAPACITANC...
- Publication number 20230371288
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen JIANG
- G11 - INFORMATION STORAGE
Information Patent Application
DATA STORAGE STRUCTURE FOR IMPROVING MEMORY CELL RELIABILITY
- Publication number 20230345847
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
Information Patent Application
TOP-ELECTRODE BARRIER LAYER FOR RRAM
- Publication number 20230320241
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsing-Lien Lin
Information Patent Application
MEMORY WINDOW OF MFM MOSFET FOR SMALL CELL SIZE
- Publication number 20230320103
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY
- Publication number 20230100181
- Publication date Mar 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230062897
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- HAI-DANG TRINH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL HAVING A LOW FORMING VOLTAGE
- Publication number 20220367810
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM STRUCTURE
- Publication number 20220367805
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220367806
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- HAI-DANG TRINH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION BARRIER LAYER IN TOP ELECTRODE TO INCREASE BREAK DOWN VOL...
- Publication number 20220367607
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsing-Lien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY
- Publication number 20220351766
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE D...
- Publication number 20220336739
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
- H01 - BASIC ELECTRIC ELEMENTS

Fa-Shen JIANG

Person

Patents Grantslast 30 patents

Resistive memory cell with switching layer comprising one or more d...

Remote plasma ultraviolet enhanced deposition

Threshold voltage-modulated memory device using variable-capacitanc...

RRAM device with improved performance

Diffusion barrier layer in top electrode to increase break down vol...

Resistive memory cell having a low forming voltage

Threshold voltage-modulated memory device using variable-capacitanc...

Multi-doped data storage structure configured to improve resistive...

Method for forming semiconductor structure

Integrated circuit device

Semiconductor device and method for manufacturing the same

Top-electrode barrier layer for RRAM

Data storage structure for improving memory cell reliability

Memory window of MFM MOSFET for small cell size

Threshold voltage-modulated memory device using variable-capacitanc...

Semiconductor device and method for manufacturing the same

Multilayer structure, capacitor structure and electronic device

Circuit design and layout with high embedded memory density

Rram structure

Resistive memory cell with switching layer comprising one or more d...

Method for fabricating integrated circuit device

Threshold voltage-modulated memory device using variable-capacitanc...

Method for manufacturing thermal dispersion layer in programmable m...

Memory window of MFM MOSFET for small cell size

Data storage structure for improving memory cell reliability

Top-electrode barrier layer for RRAM

Circuit design and layout with high embedded memory density

Diffusion barrier layer in top electrode to increase break down vol...

Resistive memory cell having a low forming voltage

RRAM structure

Patents Applicationslast 30 patents

MEMORY DEVICE WITH IMPROVED PERFORMANCE

SEMICONDUCTOR DEVICE, MEMORY STRUCTURE AND METHOD OF FORMING THE SAME

DIFFUSION BARRIER LAYER IN TOP ELECTRODE TO INCREASE BREAK DOWN VOL...

RESISTIVE MEMORY CELL HAVING A LOW FORMING VOLTAGE

MULTI-DOPED DATA STORAGE STRUCTURE CONFIGURED TO IMPROVE RESISTIVE...

INTEGRATED CIRCUIT STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

OXYGEN AFFINITY LAYER TO IMPROVE RRAM CELL PERFORMANCE

TOP-ELECTRODE BARRIER LAYER FOR RRAM

IMPROVE MEMORY WINDOW OF MFM MOSFET FOR SMALL CELL SIZE

THRESHOLD VOLTAGE-MODULATED MEMORY DEVICE USING VARIABLE-CAPACITANC...

RRAM STRUCTURE

CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY

INTEGRATED CIRCUIT DEVICE

RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE D...

THRESHOLD VOLTAGE-MODULATED MEMORY DEVICE USING VARIABLE-CAPACITANC...

THERMAL DISPERSION LAYER IN PROGRAMMABLE METALLIZATION CELL

MULTILAYER STRUCTURE, CAPACITOR STRUCTURE AND ELECTRONIC DEVICE

THRESHOLD VOLTAGE-MODULATED MEMORY DEVICE USING VARIABLE-CAPACITANC...

DATA STORAGE STRUCTURE FOR IMPROVING MEMORY CELL RELIABILITY

TOP-ELECTRODE BARRIER LAYER FOR RRAM

MEMORY WINDOW OF MFM MOSFET FOR SMALL CELL SIZE

CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

RESISTIVE MEMORY CELL HAVING A LOW FORMING VOLTAGE

RRAM STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

DIFFUSION BARRIER LAYER IN TOP ELECTRODE TO INCREASE BREAK DOWN VOL...

CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY

RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE D...