Fabio Pellizzer

Person

Cornate d'Adda Province-MB, IT

People

Patents Grantslast 30 patents

Information Patent Grant
Cross-point memory and methods for forming of the same
- Patent number 11,114,613
- Issue date Sep 7, 2021
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method, system, and device for phase change memory switch wall cell...
- Patent number 11,031,553
- Issue date Jun 8, 2021
- OVONYX MEMORY TECHNOLOGY, LLC
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point memory and methods for forming of the same
- Patent number 10,680,170
- Issue date Jun 9, 2020
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory cell structures including a chalcogenide materi...
- Patent number 10,622,558
- Issue date Apr 14, 2020
- Intel Corporation
- Lorenzo Fratin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method, system, and device for phase change memory switch wall cell...
- Patent number 10,580,980
- Issue date Mar 3, 2020
- OVONYX MEMORY TECHNOLOGY, LLC
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device
- Patent number 10,482,954
- Issue date Nov 19, 2019
- Micron Technology, Inc.
- Fabio Pellizzer
- G11 - INFORMATION STORAGE
Information Patent Grant
Cross-point memory and methods for forming of the same
- Patent number 10,283,703
- Issue date May 7, 2019
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method, system, and device for phase change memory switch wall cell...
- Patent number 10,186,659
- Issue date Jan 22, 2019
- OVONYX MEMORY TECHNOLOGY, LLC
- Fabio Pellizzer
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-deck memory device with inverted deck
- Patent number 10,163,982
- Issue date Dec 25, 2018
- Intel Corporation
- Andrea Redaelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-aligned interconnection for integrated circuits
- Patent number 10,157,788
- Issue date Dec 18, 2018
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Clamp elements for phase change memory arrays
- Patent number 10,141,508
- Issue date Nov 27, 2018
- Micron Technology, Inc.
- Antonino Rigano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory cell and manufacturing method thereof using min...
- Patent number 9,876,166
- Issue date Jan 23, 2018
- Micron Technology, Inc.
- Roberto Bez
- G11 - INFORMATION STORAGE
Information Patent Grant
Cross-point memory and methods for fabrication of same
- Patent number 9,806,129
- Issue date Oct 31, 2017
- Micron Technology, Inc.
- Marcello Ravasio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for base contact layout, such as for memory
- Patent number 9,786,719
- Issue date Oct 10, 2017
- Micron Technology, Inc.
- Antonino Rigano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device
- Patent number 9,779,805
- Issue date Oct 3, 2017
- Micron Technology, Inc.
- Fabio Pellizzer
- G11 - INFORMATION STORAGE
Information Patent Grant
Cross-point memory and methods for fabrication of same
- Patent number 9,768,378
- Issue date Sep 19, 2017
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method, system, and device for phase change memory switch wall cell...
- Patent number 9,698,345
- Issue date Jul 4, 2017
- OVONYX MEMORY TECHNOLOGY, LLC
- Fabio Pellizzer
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatuses and methods of reading memory cells based on response t...
- Patent number 9,672,908
- Issue date Jun 6, 2017
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Method, system and device for recessed contact in memory array
- Patent number 9,634,063
- Issue date Apr 25, 2017
- Micron Technology, Inc.
- Fabio Pellizzer
- G11 - INFORMATION STORAGE
Information Patent Grant
Connections for memory electrode lines
- Patent number 9,613,902
- Issue date Apr 4, 2017
- Micron Technology, Inc.
- Fabio Pellizzer
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory device with voltage control elements
- Patent number 9,525,007
- Issue date Dec 20, 2016
- Micron Technology, Inc.
- Fabio Pellizzer
- G11 - INFORMATION STORAGE
Information Patent Grant
Clamp elements for phase change memory arrays
- Patent number 9,520,554
- Issue date Dec 13, 2016
- Micron Technology, Inc.
- Antonino Rigano
- G11 - INFORMATION STORAGE
Information Patent Grant
Method, system, and device for phase change memory switch wall cell...
- Patent number 9,520,555
- Issue date Dec 13, 2016
- OVONYX MEMORY TECHNOLOGY, LLC
- Fabio Pellizzer
- G11 - INFORMATION STORAGE
Information Patent Grant
Connections for memory electrode lines
- Patent number 9,443,562
- Issue date Sep 13, 2016
- Micron Technology, Inc.
- Fabio Pellizzer
- G11 - INFORMATION STORAGE
Information Patent Grant
Heating phase change material
- Patent number 9,343,676
- Issue date May 17, 2016
- Micron Technology, Inc.
- Guy C. Wicker
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory arrays and methods of forming same
- Patent number 9,343,670
- Issue date May 17, 2016
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells and methods of forming memory cells
- Patent number 9,324,945
- Issue date Apr 26, 2016
- Micron Technology, Inc.
- Lequn Jennifer Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cell structures and methods
- Patent number 9,318,699
- Issue date Apr 19, 2016
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatuses and methods of reading memory cells based on response t...
- Patent number 9,275,730
- Issue date Mar 1, 2016
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-aligned interconnection for integrated circuits
- Patent number 9,269,747
- Issue date Feb 23, 2016
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE WITH INCREASED ELECTRODE RESISTANCE TO REDUCE TRANSIE...
- Publication number 20220254999
- Publication date Aug 11, 2022
- Intel Corporation
- SRIVATSAN VENKATESAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD, SYSTEM, AND DEVICE FOR PHASE CHANGE MEMORY SWITCH WALL CELL...
- Publication number 20210273162
- Publication date Sep 2, 2021
- Ovonyx Memory Technology, LLC
- Fabio Pellizzer
- G11 - INFORMATION STORAGE
Information Patent Application
CROSS-POINT MEMORY AND METHODS FOR FORMING OF THE SAME
- Publication number 20200266343
- Publication date Aug 20, 2020
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD, SYSTEM, AND DEVICE FOR PHASE CHANGE MEMORY SWITCH WALL CELL...
- Publication number 20200243765
- Publication date Jul 30, 2020
- Ovonyx Memory Technology, LLC
- Fabio Pellizzer
- G11 - INFORMATION STORAGE
Information Patent Application
CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME
- Publication number 20190288194
- Publication date Sep 19, 2019
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD, SYSTEM, AND DEVICE FOR PHASE CHANGE MEMORY SWITCH WALL CELL...
- Publication number 20190181340
- Publication date Jun 13, 2019
- Ovonyx Memory Technology, LLC
- Fabio Pellizzer
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY STRUCTURES AND DEVICES
- Publication number 20190044063
- Publication date Feb 7, 2019
- Intel Corporation
- Lorenzo Fratin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-DECK MEMORY DEVICE WITH INVERTED DECK
- Publication number 20180286921
- Publication date Oct 4, 2018
- Intel Corporation
- Andrea REDAELLI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD, SYSTEM, AND DEVICE FOR PHASE CHANGE MEMORY SWITCH WALL CELL...
- Publication number 20180226577
- Publication date Aug 9, 2018
- Ovonyx Memory Technology, LLC
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE PATTERNING METHOD TO FORM SUB-LITHOGRAPHIC PILLARS
- Publication number 20180114813
- Publication date Apr 26, 2018
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME
- Publication number 20180006217
- Publication date Jan 4, 2018
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY MODULE WITH UNPATTERNED STORAGE MATERIAL
- Publication number 20170338282
- Publication date Nov 23, 2017
- Intel Corporation
- Umberto M. MEOTTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD, SYSTEM, AND DEVICE FOR PHASE CHANGE MEMORY SWITCH WALL CELL...
- Publication number 20170117468
- Publication date Apr 27, 2017
- Ovonyx Memory Technology, LLC
- Fabio Pellizzer
- G11 - INFORMATION STORAGE
Information Patent Application
CLAMP ELEMENTS FOR PHASE CHANGE MEMORY ARRAYS
- Publication number 20170062715
- Publication date Mar 2, 2017
- Micron Technology, Inc.
- Antonino Rigano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONNECTIONS FOR MEMORY ELECTRODE LINES
- Publication number 20170033042
- Publication date Feb 2, 2017
- Micron Technology, Inc.
- Fabio Pellizzer
- G11 - INFORMATION STORAGE
Information Patent Application
HEATING PHASE CHANGE MATERIAL
- Publication number 20160211017
- Publication date Jul 21, 2016
- Micron Technology, Inc.
- Guy C. Wicker
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-ALIGNED INTERCONNECTION FOR INTEGRATED CIRCUITS
- Publication number 20160181156
- Publication date Jun 23, 2016
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUSES AND METHODS OF READING MEMORY CELLS BASED ON RESPONSE T...
- Publication number 20160163383
- Publication date Jun 9, 2016
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Application
CONNECTIONS FOR MEMORY ELECTRODE LINES
- Publication number 20160133300
- Publication date May 12, 2016
- Micron Technology, Inc.
- Fabio Pellizzer
- G11 - INFORMATION STORAGE
Information Patent Application
CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME
- Publication number 20160056208
- Publication date Feb 25, 2016
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING SELF-ALIGNED CONDUCTIVE LINES FOR RESISTIVE RANDOM ACCESS M...
- Publication number 20160028002
- Publication date Jan 28, 2016
- Micron Technology, Inc.
- INNOCENZO TORTORELLI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD, SYSTEM AND DEVICE FOR RECESSED CONTACT IN MEMORY ARRAY
- Publication number 20150318331
- Publication date Nov 5, 2015
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUSES AND METHODS OF READING MEMORY CELLS
- Publication number 20150294716
- Publication date Oct 15, 2015
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY DEVICE
- Publication number 20150287458
- Publication date Oct 8, 2015
- Micron Technology, Inc.
- Fabio Pellizzer
- G11 - INFORMATION STORAGE
Information Patent Application
CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME
- Publication number 20150243708
- Publication date Aug 27, 2015
- Micron Technology, Inc.
- Marcello Ravasio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD, SYSTEM, AND DEVICE FOR PHASE CHANGE MEMORY SWITCH WALL CELL...
- Publication number 20150188042
- Publication date Jul 2, 2015
- Micron Technology, Inc.
- Fabio Pellizzer
- G11 - INFORMATION STORAGE
Information Patent Application
DOUBLE PATTERNING METHOD TO FORM SUB-LITHOGRAPHIC PILLARS
- Publication number 20150108422
- Publication date Apr 23, 2015
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODIFIED RESET STATE FOR ENHANCED READ MARGIN OF PHASE CHANGE MEMORY
- Publication number 20150092483
- Publication date Apr 2, 2015
- Micron Technology, Inc.
- MATTIA BONIARDI
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cells and Methods of Forming Memory Cells
- Publication number 20150041749
- Publication date Feb 12, 2015
- Micron Technology, Inc.
- Lequn Jennifer Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Memory Cells and Arrays
- Publication number 20150028283
- Publication date Jan 29, 2015
- Micron Technology, Inc.
- Andrea Redaelli
- H01 - BASIC ELECTRIC ELEMENTS

Fabio Pellizzer

Person

Patents Grantslast 30 patents

Cross-point memory and methods for forming of the same

Method, system, and device for phase change memory switch wall cell...

Cross-point memory and methods for forming of the same

Non-volatile memory cell structures including a chalcogenide materi...

Method, system, and device for phase change memory switch wall cell...

Phase change memory device

Cross-point memory and methods for forming of the same

Method, system, and device for phase change memory switch wall cell...

Multi-deck memory device with inverted deck

Self-aligned interconnection for integrated circuits

Clamp elements for phase change memory arrays

Phase change memory cell and manufacturing method thereof using min...

Cross-point memory and methods for fabrication of same

Method for base contact layout, such as for memory

Phase change memory device

Cross-point memory and methods for fabrication of same

Method, system, and device for phase change memory switch wall cell...

Apparatuses and methods of reading memory cells based on response t...

Method, system and device for recessed contact in memory array

Connections for memory electrode lines

Phase change memory device with voltage control elements

Clamp elements for phase change memory arrays

Method, system, and device for phase change memory switch wall cell...

Connections for memory electrode lines

Heating phase change material

Memory arrays and methods of forming same

Memory cells and methods of forming memory cells

Resistive memory cell structures and methods

Apparatuses and methods of reading memory cells based on response t...

Self-aligned interconnection for integrated circuits

Patents Applicationslast 30 patents

MEMORY DEVICE WITH INCREASED ELECTRODE RESISTANCE TO REDUCE TRANSIE...

METHOD, SYSTEM, AND DEVICE FOR PHASE CHANGE MEMORY SWITCH WALL CELL...

CROSS-POINT MEMORY AND METHODS FOR FORMING OF THE SAME

METHOD, SYSTEM, AND DEVICE FOR PHASE CHANGE MEMORY SWITCH WALL CELL...

CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME

METHOD, SYSTEM, AND DEVICE FOR PHASE CHANGE MEMORY SWITCH WALL CELL...

NON-VOLATILE MEMORY STRUCTURES AND DEVICES

MULTI-DECK MEMORY DEVICE WITH INVERTED DECK

METHOD, SYSTEM, AND DEVICE FOR PHASE CHANGE MEMORY SWITCH WALL CELL...

DOUBLE PATTERNING METHOD TO FORM SUB-LITHOGRAPHIC PILLARS

CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME

MEMORY MODULE WITH UNPATTERNED STORAGE MATERIAL

METHOD, SYSTEM, AND DEVICE FOR PHASE CHANGE MEMORY SWITCH WALL CELL...

CLAMP ELEMENTS FOR PHASE CHANGE MEMORY ARRAYS

CONNECTIONS FOR MEMORY ELECTRODE LINES

HEATING PHASE CHANGE MATERIAL

SELF-ALIGNED INTERCONNECTION FOR INTEGRATED CIRCUITS

APPARATUSES AND METHODS OF READING MEMORY CELLS BASED ON RESPONSE T...

CONNECTIONS FOR MEMORY ELECTRODE LINES

CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME

FORMING SELF-ALIGNED CONDUCTIVE LINES FOR RESISTIVE RANDOM ACCESS M...

METHOD, SYSTEM AND DEVICE FOR RECESSED CONTACT IN MEMORY ARRAY

APPARATUSES AND METHODS OF READING MEMORY CELLS

PHASE CHANGE MEMORY DEVICE

CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME

METHOD, SYSTEM, AND DEVICE FOR PHASE CHANGE MEMORY SWITCH WALL CELL...

DOUBLE PATTERNING METHOD TO FORM SUB-LITHOGRAPHIC PILLARS

MODIFIED RESET STATE FOR ENHANCED READ MARGIN OF PHASE CHANGE MEMORY

Memory Cells and Methods of Forming Memory Cells

Methods of Forming Memory Cells and Arrays