Faisal Yaqoob

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Ultrahigh selective nitride etch to form FinFET devices
- Patent number 11,469,079
- Issue date Oct 11, 2022
- Lam Research Corporation
- Kwame Eason
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isotropic atomic layer etch for silicon oxides using no activation
- Patent number 10,679,868
- Issue date Jun 9, 2020
- Lam Research Corporation
- Ivan L. Berry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultrahigh selective polysilicon etch with high throughput
- Patent number 10,283,615
- Issue date May 7, 2019
- Novellus Systems, Inc.
- Dengliang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for ultrahigh selective nitride etch
- Patent number 10,192,751
- Issue date Jan 29, 2019
- Lam Research Corporation
- Dengliang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for achieving ultra-high selectivity while etching silicon n...
- Patent number 9,911,620
- Issue date Mar 6, 2018
- Lam Research Corporation
- Helen H. Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isotropic atomic layer etch for silicon oxides using no activation
- Patent number 9,425,041
- Issue date Aug 23, 2016
- Lam Research Corporation
- Ivan L. Berry
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ULTRAHIGH SELECTIVE POLYSILICON ETCH WITH HIGH THROUGHPUT
- Publication number 20190221654
- Publication date Jul 18, 2019
- Novellus Systems, Inc.
- Dengliang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRAHIGH SELECTIVE NITRIDE ETCH TO FORM FINFET DEVICES
- Publication number 20180269070
- Publication date Sep 20, 2018
- LAM RESEARCH CORPORATION
- Kwame Eason
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS FOR ACHIEVING ULTRA-HIGH SELECTIVITY WHILE ETCHING SILICO...
- Publication number 20180158692
- Publication date Jun 7, 2018
- LAM RESEARCH CORPORATION
- Helen H. Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR ULTRAHIGH SELECTIVE NITRIDE ETCH
- Publication number 20170110335
- Publication date Apr 20, 2017
- LAM RESEARCH CORPORATION
- Dengliang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOTROPIC ATOMIC LAYER ETCH FOR SILICON OXIDES USING NO ACTIVATION
- Publication number 20160329221
- Publication date Nov 10, 2016
- LAM RESEARCH CORPORATION
- Ivan L. Berry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR ACHIEVING ULTRA-HIGH SELECTIVITY WHILE ETCHING SILICON N...
- Publication number 20160247688
- Publication date Aug 25, 2016
- LAM RESEARCH CORPORATION
- Helen H. Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOTROPIC ATOMIC LAYER ETCH FOR SILICON OXIDES USING NO ACTIVATION
- Publication number 20160196969
- Publication date Jul 7, 2016
- LAM RESEARCH CORPORATION
- Ivan L. Berry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE NITRIDE ETCH
- Publication number 20160181116
- Publication date Jun 23, 2016
- LAM RESEARCH CORPORATION
- Ivan L. Berry
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
ULTRAHIGH SELECTIVE POLYSILICON ETCH WITH HIGH THROUGHPUT
- Publication number 20160064519
- Publication date Mar 3, 2016
- LAM RESEARCH CORPORATION
- Dengliang Yang
- H01 - BASIC ELECTRIC ELEMENTS

Faisal Yaqoob

Person

Patents Grantslast 30 patents

Ultrahigh selective nitride etch to form FinFET devices

Isotropic atomic layer etch for silicon oxides using no activation

Ultrahigh selective polysilicon etch with high throughput

Systems and methods for ultrahigh selective nitride etch

Method for achieving ultra-high selectivity while etching silicon n...

Isotropic atomic layer etch for silicon oxides using no activation

Patents Applicationslast 30 patents

ULTRAHIGH SELECTIVE POLYSILICON ETCH WITH HIGH THROUGHPUT

ULTRAHIGH SELECTIVE NITRIDE ETCH TO FORM FINFET DEVICES

APPARATUS FOR ACHIEVING ULTRA-HIGH SELECTIVITY WHILE ETCHING SILICO...

SYSTEMS AND METHODS FOR ULTRAHIGH SELECTIVE NITRIDE ETCH

ISOTROPIC ATOMIC LAYER ETCH FOR SILICON OXIDES USING NO ACTIVATION

METHOD FOR ACHIEVING ULTRA-HIGH SELECTIVITY WHILE ETCHING SILICON N...

ISOTROPIC ATOMIC LAYER ETCH FOR SILICON OXIDES USING NO ACTIVATION

SELECTIVE NITRIDE ETCH

ULTRAHIGH SELECTIVE POLYSILICON ETCH WITH HIGH THROUGHPUT