Fan Chu

Person

Colorado Springs, CO, US

People

Patents Grantslast 30 patents

Information Patent Grant
Local reference voltage generator for non-volatile memory
- Patent number 11,978,494
- Issue date May 7, 2024
- Infineon Technologies LLC
- Edwin Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Local reference voltage generator for non-volatile memory
- Patent number 11,587,603
- Issue date Feb 21, 2023
- Infineon Technologies LLC
- Edwin Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
2T1C ferro-electric random access memory cell
- Patent number 10,332,596
- Issue date Jun 25, 2019
- Cypress Semiconductor Corporation
- Joseph S Tandingan
- G11 - INFORMATION STORAGE
Information Patent Grant
Damascene oxygen barrier and hydrogen barrier for ferroelectric ran...
- Patent number 10,304,731
- Issue date May 28, 2019
- Cypress Semiconductor Corporation
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
2T1C ferro-electric random access memory cell
- Patent number 10,074,422
- Issue date Sep 11, 2018
- Cypress Semiconductor Corporation
- Joseph S Tandingan
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile static RAM and method of operation thereof
- Patent number 9,514,816
- Issue date Dec 6, 2016
- Cypress Semiconductor Corporation
- Jayant Ashokkumar
- G11 - INFORMATION STORAGE
Information Patent Grant
Hybrid reference generation for ferroelectric random access memory
- Patent number 9,514,797
- Issue date Dec 6, 2016
- Cypress Semiconductor Corporation
- Fan Chu
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memories with a stress buffer
- Patent number 8,963,343
- Issue date Feb 24, 2015
- Cypress Semiconductor Corporation
- Jarrod Eliason
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for mitigating imprint in a ferroelectric memory
- Patent number 8,081,500
- Issue date Dec 20, 2011
- Ramtron International Corporation
- Craig Taylor
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit for generating a centered reference voltage for a 1T/1C fer...
- Patent number 7,313,010
- Issue date Dec 25, 2007
- Ramtron International Corporation
- Shan Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit for generating a centered reference voltage for a 1T/1C fer...
- Patent number 7,116,572
- Issue date Oct 3, 2006
- Ramtron International Corporation
- Shan Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having a ferroelectric capacitor and a fabrica...
- Patent number 6,964,873
- Issue date Nov 15, 2005
- Fujitsu Limited
- Katsuyoshi Matsuura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing high quality PZT films for ferroelectric memo...
- Patent number 6,887,716
- Issue date May 3, 2005
- Fujitsu Limited
- Glen Fox
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric semiconductor memory device and a fabrication process...
- Patent number 6,777,287
- Issue date Aug 17, 2004
- Fujitsu Limited
- Soichiro Ozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric thin film capacitors having multi-layered crystallogr...
- Patent number 6,627,930
- Issue date Sep 30, 2003
- Fujitsu Limited
- Glen Fox
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric semiconductor memory device and a fabrication process...
- Patent number 6,617,626
- Issue date Sep 9, 2003
- Fujitsu Limited
- Soichiro Ozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a ferroelectric memory cell including co-a...
- Patent number 6,376,259
- Issue date Apr 23, 2002
- Ramtron International Corporation
- Fan Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer approach for optimizing ferroelectric film performance
- Patent number 6,287,637
- Issue date Sep 11, 2001
- Ramtron International Corporation
- Fan Chu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LOCAL REFERENCE VOLTAGE GENERATOR FOR NON-VOLATILE MEMORY
- Publication number 20230267983
- Publication date Aug 24, 2023
- Infineon Technologies LLC
- Edwin KIM
- G11 - INFORMATION STORAGE
Information Patent Application
Local Reference Voltage Generator for Non-Volatile Memory
- Publication number 20220101904
- Publication date Mar 31, 2022
- Infineon Technologies LLC
- Edwin Kim
- G11 - INFORMATION STORAGE
Information Patent Application
2T1C Ferro-electric Random Access Memory Cell
- Publication number 20190088320
- Publication date Mar 21, 2019
- CYPRESS SEMICONDUCTOR CORPORATION
- Joseph S. Tandingan
- G11 - INFORMATION STORAGE
Information Patent Application
DAMASCENE OXYGEN BARRIER AND HYDROGEN BARRIER FOR FERROELECTRIC RAN...
- Publication number 20180182770
- Publication date Jun 28, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-Volatile Static RAM and Method of Operation Thereof
- Publication number 20160365145
- Publication date Dec 15, 2016
- CYPRESS SEMICONDUCTOR CORPORATION
- Jayant Ashokkumar
- G11 - INFORMATION STORAGE
Information Patent Application
DAMASCENE OXYGEN BARRIER AND HYDROGEN BARRIER FOR FERROELECTRIC RAN...
- Publication number 20150206893
- Publication date Jul 23, 2015
- CYPRESS SEMICONDUCTOR CORPORATION
- Shan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MITIGATING IMPRINT IN A FERROELECTRIC MEMORY
- Publication number 20100246238
- Publication date Sep 30, 2010
- RAMTRON INTERNATIONAL CORPORATION
- Craig Taylor
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUIT FOR GENERATING A CENTERED REFERENCE VOLTAGE FOR A 1T/1C FER...
- Publication number 20060245286
- Publication date Nov 2, 2006
- Shan Sun
- G11 - INFORMATION STORAGE
Information Patent Application
Circuit for generating a centered reference voltage for a 1T/1C fer...
- Publication number 20060098470
- Publication date May 11, 2006
- Shan Sun
- G11 - INFORMATION STORAGE
Information Patent Application
Ferroelectric semiconductor memory device and a fabrication process...
- Publication number 20030205743
- Publication date Nov 6, 2003
- Soichiro Ozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a ferroelectric capacitor and a fabrica...
- Publication number 20020177243
- Publication date Nov 28, 2002
- Katsuyoshi Matsuura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric semiconductor memory device and a fabrication process...
- Publication number 20020158278
- Publication date Oct 31, 2002
- Soichiro Ozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a ferroelectric capacitor and a fabrica...
- Publication number 20020142489
- Publication date Oct 3, 2002
- Katsuyoshi Matsuura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for producing high quality PZT films for ferroelectric memo...
- Publication number 20020074601
- Publication date Jun 20, 2002
- Glen Fox
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Local reference voltage generator for non-volatile memory

Local reference voltage generator for non-volatile memory

2T1C ferro-electric random access memory cell

Damascene oxygen barrier and hydrogen barrier for ferroelectric ran...

2T1C ferro-electric random access memory cell

Non-volatile static RAM and method of operation thereof

Hybrid reference generation for ferroelectric random access memory

Ferroelectric memories with a stress buffer

Method for mitigating imprint in a ferroelectric memory

Circuit for generating a centered reference voltage for a 1T/1C fer...

Circuit for generating a centered reference voltage for a 1T/1C fer...

Semiconductor device having a ferroelectric capacitor and a fabrica...

Process for producing high quality PZT films for ferroelectric memo...

Ferroelectric semiconductor memory device and a fabrication process...

Ferroelectric thin film capacitors having multi-layered crystallogr...

Ferroelectric semiconductor memory device and a fabrication process...

Method for manufacturing a ferroelectric memory cell including co-a...

Multi-layer approach for optimizing ferroelectric film performance

Patents Applicationslast 30 patents

LOCAL REFERENCE VOLTAGE GENERATOR FOR NON-VOLATILE MEMORY

Local Reference Voltage Generator for Non-Volatile Memory

2T1C Ferro-electric Random Access Memory Cell

DAMASCENE OXYGEN BARRIER AND HYDROGEN BARRIER FOR FERROELECTRIC RAN...

Non-Volatile Static RAM and Method of Operation Thereof

DAMASCENE OXYGEN BARRIER AND HYDROGEN BARRIER FOR FERROELECTRIC RAN...

METHOD FOR MITIGATING IMPRINT IN A FERROELECTRIC MEMORY

CIRCUIT FOR GENERATING A CENTERED REFERENCE VOLTAGE FOR A 1T/1C FER...

Circuit for generating a centered reference voltage for a 1T/1C fer...

Ferroelectric semiconductor memory device and a fabrication process...

Semiconductor device having a ferroelectric capacitor and a fabrica...

Ferroelectric semiconductor memory device and a fabrication process...

Semiconductor device having a ferroelectric capacitor and a fabrica...

Process for producing high quality PZT films for ferroelectric memo...