Fangfang Ren

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Nanjing, CN

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Patents Grantslast 30 patents

Information Patent Grant
GaN HEMT transistor with impact energy release capability for use i...
- Patent number 12,300,746
- Issue date May 13, 2025
- Nanjing University
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide bandgap semiconductor structure for irradiation characteristic...
- Patent number 12,295,154
- Issue date May 6, 2025
- Nanjing University
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN HEMT device for irradiation damage detection and detection and...
- Patent number 12,287,360
- Issue date Apr 29, 2025
- Nanjing University
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ testing system for semiconductor device in aerospace irradi...
- Patent number 12,146,908
- Issue date Nov 19, 2024
- Nanjing University
- Feng Zhou
- G01 - MEASURING TESTING

Patents Applicationslast 30 patents

Information Patent Application
RESET-TYPE CHARGE-SENSITIVE AMPLIFYING CIRCUIT, AND METHOD FOR AMPL...
- Publication number 20250237772
- Publication date Jul 24, 2025
- Nanjing University
- Weizong XU
- G01 - MEASURING TESTING
Information Patent Application
IRRADIATION-RESISTANT GaN HEMT WITH DECOUPLING REVERSE CONDUCTION C...
- Publication number 20250169162
- Publication date May 22, 2025
- Nanjing University
- FENG ZHOU
Information Patent Application
GAN HEMT TRANSISTOR WITH IMPACT ENERGY RELEASE CAPABILITY FOR USE I...
- Publication number 20250126824
- Publication date Apr 17, 2025
- Nanjing University
- FENG ZHOU