Federico Nardi

Person

Palo Alto, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Two-terminal one-time programmable fuses for memory cells
- Patent number 11,948,630
- Issue date Apr 2, 2024
- Applied Materials, Inc.
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Grant
Soft reset for multi-level programming of memory cells in non-von n...
- Patent number 11,790,989
- Issue date Oct 17, 2023
- Applied Materials, Inc.
- Deepak Kamalanathan
- G11 - INFORMATION STORAGE
Information Patent Grant
Vector matrix multiplication with 3D NAND
- Patent number 11,397,790
- Issue date Jul 26, 2022
- SanDisk Technologies LLC
- Federico Nardi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
In-storage logic for hardware accelerators
- Patent number 11,361,829
- Issue date Jun 14, 2022
- SanDisk Technologies LLC
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming a phase change memory with vertical cross-point...
- Patent number 11,101,326
- Issue date Aug 24, 2021
- SanDisk Technologies LLC
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a phase change memory with vertical cross-point...
- Patent number 11,088,206
- Issue date Aug 10, 2021
- SanDisk Tehnologies LLC
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Soft reset for multi-level programming of memory cells in non-Von N...
- Patent number 11,017,856
- Issue date May 25, 2021
- Applied Materials, Inc.
- Deepak Kamalanathan
- G11 - INFORMATION STORAGE
Information Patent Grant
Threshold switch for memory
- Patent number 10,943,952
- Issue date Mar 9, 2021
- SanDisk Technologies LLC
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-state phase change memory device with vertical cross-point st...
- Patent number 10,374,014
- Issue date Aug 6, 2019
- SanDisk Technologies LLC
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Grant
Write-once read-many amorphous chalcogenide-based memory
- Patent number 10,290,348
- Issue date May 14, 2019
- SanDisk Technologies LLC
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-state and confined phase change memory with vertical cross-po...
- Patent number 10,262,730
- Issue date Apr 16, 2019
- SanDisk Technologies LLC
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory electrode with multiple thermal interfaces
- Patent number 10,147,876
- Issue date Dec 4, 2018
- SanDisk Technologies LLC
- Lidu Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device including a lateral air gap around a memory...
- Patent number 10,050,194
- Issue date Aug 14, 2018
- SanDisk Technologies LLC
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two stage forming of resistive random access memory cells
- Patent number 9,786,368
- Issue date Oct 10, 2017
- Intermolecular, Inc.
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Current selectors formed using single stack structures
- Patent number 9,680,092
- Issue date Jun 13, 2017
- Intermolecular, Inc.
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
All around electrode for novel 3D RRAM applications
- Patent number 9,620,205
- Issue date Apr 11, 2017
- Intermolecular, Inc.
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked bi-layer as the low power switchable RRAM
- Patent number 9,246,094
- Issue date Jan 26, 2016
- Intermolecular, Inc.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron barrier height controlled interfaces of resistive switchin...
- Patent number 9,246,087
- Issue date Jan 26, 2016
- Intermolecular, Inc.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ReRAM cells with diffusion-resistant metal silicon oxide layers
- Patent number 9,246,091
- Issue date Jan 26, 2016
- Intermolecular, Inc.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive switching sample and hold
- Patent number 9,245,649
- Issue date Jan 26, 2016
- Intermolecular, Inc.
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Grant
Current-limiting electrodes
- Patent number 9,224,951
- Issue date Dec 29, 2015
- Intermolecular, Inc.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Morphology control of ultra-thin MeOx layer
- Patent number 9,178,140
- Issue date Nov 3, 2015
- Intermolecular, Inc.
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory cells having shared electrodes with...
- Patent number 9,178,000
- Issue date Nov 3, 2015
- Intermolecular, Inc.
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage controlling assemblies including variable resistance devices
- Patent number 9,054,634
- Issue date Jun 9, 2015
- Intermolecular, Inc.
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory cells having variable switching char...
- Patent number 9,047,940
- Issue date Jun 2, 2015
- Intermolecular, Inc.
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical oxide-oxide interface for forming-free, low power and low...
- Patent number 9,018,037
- Issue date Apr 28, 2015
- Intermolecular, Inc.
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Morphology control of ultra-thin MeOx layer
- Patent number 9,012,879
- Issue date Apr 21, 2015
- Intermolecular, Inc.
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive switching schmitt triggers and comparators
- Patent number 9,000,819
- Issue date Apr 7, 2015
- Intermolecular, Inc.
- Federico Nardi
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
IL-free MIM stack for clean RRAM devices
- Patent number 8,872,152
- Issue date Oct 28, 2014
- Intermolecular, Inc.
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Morphology control of ultra-thin MeOx layer
- Patent number 8,866,118
- Issue date Oct 21, 2014
- Intermolecular, Inc.
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TWO-TERMINAL ONE-TIME PROGRAMMABLE FUSES FOR MEMORY CELLS
- Publication number 20230134437
- Publication date May 4, 2023
- Applied Materials, Inc.
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Application
SOFT RESET FOR MULTI-LEVEL PROGRAMMING OF MEMORY CELLS IN NON-VON N...
- Publication number 20210280247
- Publication date Sep 9, 2021
- Applied Materials, Inc.
- Deepak Kamalanathan
- G11 - INFORMATION STORAGE
Information Patent Application
IN-STORAGE LOGIC FOR HARDWARE ACCELERATORS
- Publication number 20210233592
- Publication date Jul 29, 2021
- SANDISK TECHNOLOGIES LLC
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Application
VECTOR MATRIX MULTIPLICATION WITH 3D NAND
- Publication number 20200410037
- Publication date Dec 31, 2020
- SANDISK TECHNOLOGIES LLC
- Federico Nardi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STORAGE CLASS MEMORY WITH IN-MEMORY ONE-TIME PAD SECURITY
- Publication number 20200401534
- Publication date Dec 24, 2020
- SANDISK TECHNOLOGIES LLC
- Federico Nardi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
THRESHOLD SWITCH FOR MEMORY
- Publication number 20200388650
- Publication date Dec 10, 2020
- SANDISK TECHNOLOGIES LLC
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF FORMING A PHASE CHANGE MEMORY WITH VERTICAL CROSS-POINT...
- Publication number 20200303459
- Publication date Sep 24, 2020
- SANDISK TECHNOLOGIES LLC
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STATE AND CONFINED PHASE CHANGE MEMORY WITH VERTICAL CROSS-PO...
- Publication number 20190115071
- Publication date Apr 18, 2019
- SanDisk Technologies LLC
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-STATE PHASE CHANGE MEMORY DEVICE WITH VERTICAL CROSS-POINT ST...
- Publication number 20190115072
- Publication date Apr 18, 2019
- SanDisk Technologies LLC
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF FORMING A PHASE CHANGE MEMORY WITH VERTICAL CROSS-POINT...
- Publication number 20190115391
- Publication date Apr 18, 2019
- SanDisk Technologies LLC
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selector Elements
- Publication number 20170104031
- Publication date Apr 13, 2017
- Intermolecular, Inc.
- Mark Clark
- G11 - INFORMATION STORAGE
Information Patent Application
Current Selectors Formed Using Single Stack Structures
- Publication number 20170062524
- Publication date Mar 2, 2017
- Intermolecular, Inc.
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Forming Ferroelectric Phases in Materials and Devices U...
- Publication number 20160181091
- Publication date Jun 23, 2016
- Intermolecular, Inc.
- Sandip Niyogi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Two Stage Forming of Resistive Random Access Memory Cells
- Publication number 20160149130
- Publication date May 26, 2016
- INTERMOLECULAR INC.
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Application
ReRAM cells with diffusion-resistant metal silicon oxide layers
- Publication number 20160028008
- Publication date Jan 28, 2016
- INTERMOLECULAR INC.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CURRENT-LIMITING ELECTRODES
- Publication number 20160020392
- Publication date Jan 21, 2016
- INTERMOLECULAR INC.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistive Random Access Memory Cells Having Shared Electrodes with...
- Publication number 20150311257
- Publication date Oct 29, 2015
- INTERMOLECULAR INC.
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Voltage Controlling Assemblies Including Variable Resistance Devices
- Publication number 20150188492
- Publication date Jul 2, 2015
- INTERMOLECULAR INC.
- Federico Nardi
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Stacked Bi-layer as the low power switchable RRAM
- Publication number 20150188045
- Publication date Jul 2, 2015
- INTERMOLECULAR INC.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky Barriers for Resistive Random Access Memory Cells
- Publication number 20150179930
- Publication date Jun 25, 2015
- INTERMOLECULAR INC.
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Feature Size Reduction in Semiconductor Devices by Selective Wet Et...
- Publication number 20150170923
- Publication date Jun 18, 2015
- Intermolecular, Inc.
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistive Switching Sample and Hold
- Publication number 20150170760
- Publication date Jun 18, 2015
- Intermolecuarl Inc.
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Application
Morphology control of ultra-thin MeOx layer
- Publication number 20150162527
- Publication date Jun 11, 2015
- INTERMOLECULAR INC.
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
All around electrode for novel 3D RRAM applications
- Publication number 20150016178
- Publication date Jan 15, 2015
- INTERMOLECULAR INC.
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Application
Morphology control of ultra-thin MeOx layer
- Publication number 20150008386
- Publication date Jan 8, 2015
- INTERMOLECULAR INC.
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistive Random Access Memory Cells Having Variable Switching Char...
- Publication number 20140192586
- Publication date Jul 10, 2014
- INTERMOLECULAR INC.
- Federico Nardi
- G11 - INFORMATION STORAGE
Information Patent Application
Morphology control of ultra-thin MeOx layer
- Publication number 20140175357
- Publication date Jun 26, 2014
- INTERMOLECULAR INC.
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IL-Free MIM stack for clean RRAM Devices
- Publication number 20140166960
- Publication date Jun 19, 2014
- INTERMOLECULAR INC.
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS

Federico Nardi

Person

Patents Grantslast 30 patents

Two-terminal one-time programmable fuses for memory cells

Soft reset for multi-level programming of memory cells in non-von n...

Vector matrix multiplication with 3D NAND

In-storage logic for hardware accelerators

Methods of forming a phase change memory with vertical cross-point...

Methods of forming a phase change memory with vertical cross-point...

Soft reset for multi-level programming of memory cells in non-Von N...

Threshold switch for memory

Multi-state phase change memory device with vertical cross-point st...

Write-once read-many amorphous chalcogenide-based memory

Multi-state and confined phase change memory with vertical cross-po...

Phase change memory electrode with multiple thermal interfaces

Resistive memory device including a lateral air gap around a memory...

Two stage forming of resistive random access memory cells

Current selectors formed using single stack structures

All around electrode for novel 3D RRAM applications

Stacked bi-layer as the low power switchable RRAM

Electron barrier height controlled interfaces of resistive switchin...

ReRAM cells with diffusion-resistant metal silicon oxide layers

Resistive switching sample and hold

Current-limiting electrodes

Morphology control of ultra-thin MeOx layer

Resistive random access memory cells having shared electrodes with...

Voltage controlling assemblies including variable resistance devices

Resistive random access memory cells having variable switching char...

Vertical oxide-oxide interface for forming-free, low power and low...

Morphology control of ultra-thin MeOx layer

Resistive switching schmitt triggers and comparators

IL-free MIM stack for clean RRAM devices

Morphology control of ultra-thin MeOx layer

Patents Applicationslast 30 patents

TWO-TERMINAL ONE-TIME PROGRAMMABLE FUSES FOR MEMORY CELLS

SOFT RESET FOR MULTI-LEVEL PROGRAMMING OF MEMORY CELLS IN NON-VON N...

IN-STORAGE LOGIC FOR HARDWARE ACCELERATORS

VECTOR MATRIX MULTIPLICATION WITH 3D NAND

STORAGE CLASS MEMORY WITH IN-MEMORY ONE-TIME PAD SECURITY

THRESHOLD SWITCH FOR MEMORY

METHODS OF FORMING A PHASE CHANGE MEMORY WITH VERTICAL CROSS-POINT...

MULTI-STATE AND CONFINED PHASE CHANGE MEMORY WITH VERTICAL CROSS-PO...

MULTI-STATE PHASE CHANGE MEMORY DEVICE WITH VERTICAL CROSS-POINT ST...

METHODS OF FORMING A PHASE CHANGE MEMORY WITH VERTICAL CROSS-POINT...

Selector Elements

Current Selectors Formed Using Single Stack Structures

Methods for Forming Ferroelectric Phases in Materials and Devices U...

Two Stage Forming of Resistive Random Access Memory Cells

ReRAM cells with diffusion-resistant metal silicon oxide layers

CURRENT-LIMITING ELECTRODES

Resistive Random Access Memory Cells Having Shared Electrodes with...

Voltage Controlling Assemblies Including Variable Resistance Devices

Stacked Bi-layer as the low power switchable RRAM

Schottky Barriers for Resistive Random Access Memory Cells

Feature Size Reduction in Semiconductor Devices by Selective Wet Et...

Resistive Switching Sample and Hold

Morphology control of ultra-thin MeOx layer

All around electrode for novel 3D RRAM applications

Morphology control of ultra-thin MeOx layer

Resistive Random Access Memory Cells Having Variable Switching Char...

Morphology control of ultra-thin MeOx layer

IL-Free MIM stack for clean RRAM Devices