Fei Frank Zhou

Person

Milpitas, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Memory device containing composition-controlled ferroelectric memor...
- Patent number 12,363,905
- Issue date Jul 15, 2025
- SanDisk Technologies, Inc.
- Kartik Sondhi
Information Patent Grant
Memory device containing composition-controlled ferroelectric memor...
- Patent number 12,356,627
- Issue date Jul 8, 2025
- SanDisk Technologies, Inc.
- Rahul Sharangpani
Information Patent Grant
Three-dimensional memory device containing variable thickness word...
- Patent number 12,347,773
- Issue date Jul 1, 2025
- SanDisk Technologies, Inc.
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing epitaxial pedestals and...
- Patent number 12,342,537
- Issue date Jun 24, 2025
- SanDisk Technologies, Inc.
- Adarsh Rajashekhar
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device containing templated crystalline fe...
- Patent number 12,289,889
- Issue date Apr 29, 2025
- SanDisk Technologies, Inc.
- Kartik Sondhi
Information Patent Grant
Methods and apparatuses for forming semiconductor devices containin...
- Patent number 12,217,965
- Issue date Feb 4, 2025
- SanDisk Technologies LLC
- Fei Zhou
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods and apparatuses for forming semiconductor devices containin...
- Patent number 12,176,203
- Issue date Dec 24, 2024
- SanDisk Technologies LLC
- Fei Zhou
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Three-dimensional memory device with word-line etch stop liners and...
- Patent number 12,137,554
- Issue date Nov 5, 2024
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with vertical word line barrier and...
- Patent number 12,137,565
- Issue date Nov 5, 2024
- SanDisk Technologies LLC
- Rahul Sharangpani
Information Patent Grant
Implementation of deep neural networks for testing and quality cont...
- Patent number 12,124,247
- Issue date Oct 22, 2024
- SanDisk Technologies LLC
- Fei Zhou
- G05 - CONTROLLING REGULATING
Information Patent Grant
Semiconductor device containing bit lines separated by air gaps and...
- Patent number 12,096,636
- Issue date Sep 17, 2024
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device containing bit lines separated by air gaps and...
- Patent number 11,984,395
- Issue date May 14, 2024
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including discrete charge storage e...
- Patent number 11,968,834
- Issue date Apr 23, 2024
- SanDisk Technologies LLC
- Ramy Nashed Bassely Said
Information Patent Grant
Three-dimensional memory device with electrically conductive layers...
- Patent number 11,877,446
- Issue date Jan 16, 2024
- SanDisk Technologies LLC
- Rahul Sharangpani
Information Patent Grant
Three-dimensional memory device including discrete charge storage e...
- Patent number 11,749,736
- Issue date Sep 5, 2023
- SanDisk Technologies LLC
- Xue Bai Pitner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing composite word lines con...
- Patent number 11,631,695
- Issue date Apr 18, 2023
- SanDisk Technologies LLC
- Rahul Sharangpani
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device including molybdenum carbide or car...
- Patent number 11,594,490
- Issue date Feb 28, 2023
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional ferroelectric memory device containing lattice-ma...
- Patent number 11,594,553
- Issue date Feb 28, 2023
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including discrete memory elements...
- Patent number 11,569,260
- Issue date Jan 31, 2023
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure containing multilayer bonding pads and meth...
- Patent number 11,527,500
- Issue date Dec 13, 2022
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing low resistance source-le...
- Patent number 11,521,984
- Issue date Dec 6, 2022
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including metal silicide source reg...
- Patent number 11,482,539
- Issue date Oct 25, 2022
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including discrete charge storage e...
- Patent number 11,469,241
- Issue date Oct 11, 2022
- SanDisk Technologies LLC
- Raghuveer S. Makala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multibit ferroelectric memory cells and methods for forming the same
- Patent number 11,450,687
- Issue date Sep 20, 2022
- SanDisk Technologies LLC
- Roshan Tirukkonda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing word lines formed by sel...
- Patent number 11,437,270
- Issue date Sep 6, 2022
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device having an epitaxial vertical semico...
- Patent number 11,424,265
- Issue date Aug 23, 2022
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device having an epitaxial vertical semico...
- Patent number 11,424,231
- Issue date Aug 23, 2022
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing metal-organic framework...
- Patent number 11,387,250
- Issue date Jul 12, 2022
- SanDisk Technologies LLC
- Ramy Nashed Bassely Said
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including discrete charge storage e...
- Patent number 11,387,244
- Issue date Jul 12, 2022
- SanDisk Technologies LLC
- Raghuveer S. Makala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fluorine-free tungsten deposition process employing in-situ oxidati...
- Patent number 11,377,733
- Issue date Jul 5, 2022
- SanDisk Technologies LLC
- Fei Zhou
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF SELECTIVE BOTTOM WIDENING OF HIGH ASPECT RATIO OPENINGS T...
- Publication number 20250234553
- Publication date Jul 17, 2025
- SANDISK TECHNOLOGIES LLC
- Bing ZHOU
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH ISOLATION TRENCH FILL STRUCTUR...
- Publication number 20250107079
- Publication date Mar 27, 2025
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Fei ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE INCLUDING A GERMANIUM-CONTAINING SOURCE STRUCTURE AND...
- Publication number 20250040139
- Publication date Jan 30, 2025
- SANDISK TECHNOLOGIES LLC
- Fei ZHOU
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE INCLUDING ALUMINUM NITRIDE DIFFUSION BARRIER LAYER AN...
- Publication number 20250008730
- Publication date Jan 2, 2025
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Rahul SHARANGPANI
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING MEMORY OPENINGS ARRANGED...
- Publication number 20240332177
- Publication date Oct 3, 2024
- SANDISK TECHNOLOGIES LLC
- Ryo NAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF BY NON...
- Publication number 20240237346
- Publication date Jul 11, 2024
- SANDISK TECHNOLOGIES LLC
- Rahul SHARANGPANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ENGINEERED CHARGE STORAG...
- Publication number 20240179897
- Publication date May 30, 2024
- SANDISK TECHNOLOGIES LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING SELF-ALIGNED FERROELECTR...
- Publication number 20240130137
- Publication date Apr 18, 2024
- SANDISK TECHNOLOGIES LLC
- Kartik SONDHI
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING DISCRETE CHARGE STORAGE...
- Publication number 20240121960
- Publication date Apr 11, 2024
- SANDISK TECHNOLOGIES LLC
- Adarsh RAJASHEKHAR
Information Patent Application
MEMORY DEVICE CONTAINING COMPOSITION-CONTROLLED FERROELECTRIC MEMOR...
- Publication number 20240064991
- Publication date Feb 22, 2024
- SANDISK TECHNOLOGIES LLC
- Kartik SONDHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE CONTAINING COMPOSITION-CONTROLLED FERROELECTRIC MEMOR...
- Publication number 20240064992
- Publication date Feb 22, 2024
- SANDISK TECHNOLOGIES LLC
- Rahul SHARANGPANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE CONTAINING FERROELECTRIC-SPACER-FERROELECTRIC MEMORY...
- Publication number 20240064995
- Publication date Feb 22, 2024
- SANDISK TECHNOLOGIES LLC
- Adarsh RAJASHEKHAR
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING TEMPLATED CRYSTALLINE FE...
- Publication number 20240008281
- Publication date Jan 4, 2024
- SANDISK TECHNOLOGIES LLC
- Kartik SONDHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING VARIABLE THICKNESS WORD...
- Publication number 20230369208
- Publication date Nov 16, 2023
- SANDISK TECHNOLOGIES LLC
- Rahul SHARANGPANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING REPLACEMENT INSULATING LA...
- Publication number 20230354608
- Publication date Nov 2, 2023
- SANDISK TECHNOLOGIES LLC
- Noriyuki NAGAHATA
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING EPITAXIAL PEDESTALS AND...
- Publication number 20230301077
- Publication date Sep 21, 2023
- SANDISK TECHNOLOGIES LLC
- Adarsh RAJASHEKHAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUSES FOR FORMING SEMICONDUCTOR DEVICES CONTAININ...
- Publication number 20230223248
- Publication date Jul 13, 2023
- SANDISK TECHNOLOGIES LLC
- Fei ZHOU
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS AND APPARATUSES FOR FORMING SEMICONDUCTOR DEVICES CONTAININ...
- Publication number 20230223266
- Publication date Jul 13, 2023
- SANDISK TECHNOLOGIES LLC
- Fei ZHOU
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS AND APPARATUSES FOR FORMING SEMICONDUCTOR DEVICES CONTAININ...
- Publication number 20230223267
- Publication date Jul 13, 2023
- SANDISK TECHNOLOGIES LLC
- Rahul SHARANGPANI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING DISCRETE CHARGE STORAGE E...
- Publication number 20230171957
- Publication date Jun 1, 2023
- SANDISK TECHNOLOGIES LLC
- Fei ZHOU
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH WORD-LINE ETCH STOP LINERS AND...
- Publication number 20230157013
- Publication date May 18, 2023
- SANDISK TECHNOLOGIES LLC
- Adarsh RAJASHEKHAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING DISCRETE CHARGE STORAGE E...
- Publication number 20230128682
- Publication date Apr 27, 2023
- SANDISK TECHNOLOGIES LLC
- Kartik SONDHI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE CONTAINING BIT LINES SEPARATED BY AIR GAPS AND...
- Publication number 20230089578
- Publication date Mar 23, 2023
- SANDISK TECHNOLOGIES LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE CONTAINING BIT LINES SEPARATED BY AIR GAPS AND...
- Publication number 20230090951
- Publication date Mar 23, 2023
- SANDISK TECHNOLOGIES LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH VERTICAL WORD LINE BARRIER AND...
- Publication number 20220399354
- Publication date Dec 15, 2022
- SANDISK TECHNOLOGIES LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH VERTICAL WORD LINE BARRIER AND...
- Publication number 20220399350
- Publication date Dec 15, 2022
- SANDISK TECHNOLOGIES LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING DISCRETE CHARGE STORAGE E...
- Publication number 20220285386
- Publication date Sep 8, 2022
- SANDISK TECHNOLOGIES LLC
- Ramy Nashed Bassely SAID
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING DISCRETE CHARGE STORAGE E...
- Publication number 20220278216
- Publication date Sep 1, 2022
- SANDISK TECHNOLOGIES LLC
- Xue Bai PITNER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING MOLYBDENUM CARBIDE OR CAR...
- Publication number 20220238453
- Publication date Jul 28, 2022
- SANDISK TECHNOLOGIES LLC
- Rahul SHARANGPANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICE CONTAINING LATTICE-MA...
- Publication number 20220231048
- Publication date Jul 21, 2022
- SANDISK TECHNOLOGIES LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS

Fei Frank Zhou

Person

Patents Grantslast 30 patents

Memory device containing composition-controlled ferroelectric memor...

Memory device containing composition-controlled ferroelectric memor...

Three-dimensional memory device containing variable thickness word...

Three-dimensional memory device containing epitaxial pedestals and...

Three-dimensional memory device containing templated crystalline fe...

Methods and apparatuses for forming semiconductor devices containin...

Methods and apparatuses for forming semiconductor devices containin...

Three-dimensional memory device with word-line etch stop liners and...

Three-dimensional memory device with vertical word line barrier and...

Implementation of deep neural networks for testing and quality cont...

Semiconductor device containing bit lines separated by air gaps and...

Semiconductor device containing bit lines separated by air gaps and...

Three-dimensional memory device including discrete charge storage e...

Three-dimensional memory device with electrically conductive layers...

Three-dimensional memory device including discrete charge storage e...

Three-dimensional memory device containing composite word lines con...

Three-dimensional memory device including molybdenum carbide or car...

Three-dimensional ferroelectric memory device containing lattice-ma...

Three-dimensional memory device including discrete memory elements...

Semiconductor structure containing multilayer bonding pads and meth...

Three-dimensional memory device containing low resistance source-le...

Three-dimensional memory device including metal silicide source reg...

Three-dimensional memory device including discrete charge storage e...

Multibit ferroelectric memory cells and methods for forming the same

Three-dimensional memory device containing word lines formed by sel...

Three-dimensional memory device having an epitaxial vertical semico...

Three-dimensional memory device having an epitaxial vertical semico...

Three-dimensional memory device containing metal-organic framework...

Three-dimensional memory device including discrete charge storage e...

Fluorine-free tungsten deposition process employing in-situ oxidati...

Patents Applicationslast 30 patents

METHOD OF SELECTIVE BOTTOM WIDENING OF HIGH ASPECT RATIO OPENINGS T...

THREE-DIMENSIONAL MEMORY DEVICE WITH ISOLATION TRENCH FILL STRUCTUR...

MEMORY DEVICE INCLUDING A GERMANIUM-CONTAINING SOURCE STRUCTURE AND...

MEMORY DEVICE INCLUDING ALUMINUM NITRIDE DIFFUSION BARRIER LAYER AN...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING MEMORY OPENINGS ARRANGED...

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF BY NON...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ENGINEERED CHARGE STORAG...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING SELF-ALIGNED FERROELECTR...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING DISCRETE CHARGE STORAGE...

MEMORY DEVICE CONTAINING COMPOSITION-CONTROLLED FERROELECTRIC MEMOR...

MEMORY DEVICE CONTAINING COMPOSITION-CONTROLLED FERROELECTRIC MEMOR...

MEMORY DEVICE CONTAINING FERROELECTRIC-SPACER-FERROELECTRIC MEMORY...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING TEMPLATED CRYSTALLINE FE...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING VARIABLE THICKNESS WORD...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING REPLACEMENT INSULATING LA...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING EPITAXIAL PEDESTALS AND...

METHODS AND APPARATUSES FOR FORMING SEMICONDUCTOR DEVICES CONTAININ...

METHODS AND APPARATUSES FOR FORMING SEMICONDUCTOR DEVICES CONTAININ...

METHODS AND APPARATUSES FOR FORMING SEMICONDUCTOR DEVICES CONTAININ...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING DISCRETE CHARGE STORAGE E...

THREE-DIMENSIONAL MEMORY DEVICE WITH WORD-LINE ETCH STOP LINERS AND...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING DISCRETE CHARGE STORAGE E...

SEMICONDUCTOR DEVICE CONTAINING BIT LINES SEPARATED BY AIR GAPS AND...

SEMICONDUCTOR DEVICE CONTAINING BIT LINES SEPARATED BY AIR GAPS AND...

THREE-DIMENSIONAL MEMORY DEVICE WITH VERTICAL WORD LINE BARRIER AND...

THREE-DIMENSIONAL MEMORY DEVICE WITH VERTICAL WORD LINE BARRIER AND...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING DISCRETE CHARGE STORAGE E...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING DISCRETE CHARGE STORAGE E...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING MOLYBDENUM CARBIDE OR CAR...

THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICE CONTAINING LATTICE-MA...